UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G http://onsemi.com Dual Common Base-Collector Bias Resistor Transistors SC-88A/SOT-353 CASE 419A STYLE 6 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the UMC2NT1G series, two complementary BRT devices are housed in the SOT-353 package which is ideal for low power surface mount applications where board space is at a premium. 2 R1 1 R2 Q2 R2 Q1 R1 4 5 MARKING DIAGRAM Features Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current 5 4 Ux M G G 1 2 3 Ux = Device Marking x = 2, 3 or 5 M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2011 December, 2011 - Rev. 10 1 Publication Order Number: UMC2NT1/D UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit RqJA 833 C/W TJ, Tstg -65 to +150 C PD *150 mW THERMAL CHARACTERISTICS Thermal Resistance - Junction-to-Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25C (Note 1) 1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max - - 100 - - 500 Unit Q1 TRANSISTOR: PNP OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA) UMC2NT1G, NSVUMC2NT1G UMC3NT1G, NSVUMC3NT1G UMC5NT1G/T2G, NSVUMC5NT2G IEBO nAdc nAdc mAdc - - - - - - 0.2 0.5 1.0 50 - - 50 - - 60 35 20 100 60 35 - - - - - 0.25 - - 0.2 4.9 - - 15.4 7.0 3.3 22 10 4.7 28.6 13 6.1 0.8 0.8 0.38 1.0 1.0 0.47 1.2 1.2 0.56 ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1G, NSVUMC2NT1G UMC3NT1G, NSVUMC3NT1G UMC5NT1G/T2G, NSVUMC5NT2G Vdc Vdc hFE Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(SAT) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Input Resistor UMC2NT1G UMC3NT1G UMC5NT1G/T2G R1 Resistor Ratio UMC2NT1G UMC3NT1G UMC5NT1G/T2G R1/R2 http://onsemi.com 2 Vdc Vdc Vdc kW UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Typ Max - - 100 - - 500 Unit Q2 TRANSISTOR: NPN OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter-Base Cutoff Current (VEB = 6.0, IC = 0 mA) UMC2NT1G UMC3NT1G UMC5NT1G/T2G IEBO nAdc nAdc mAdc - - - - - - 0.2 0.5 0.1 50 - - 50 - - 60 35 80 100 60 140 - - - - - 0.25 - - 0.2 4.9 - - 15.4 7.0 33 22 10 47 28.6 13 61 0.8 0.8 0.8 1.0 1.0 1.0 1.2 1.2 1.2 ON CHARACTERISTICS Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO DC Current Gain (VCE = 10 V, IC = 5.0 mA) UMC2NT1G UMC3NT1G UMC5NT1G/T2G Vdc Vdc hFE Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(SAT) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) VOH Input Resistor UMC2NT1G UMC3NT1G UMC5NT1G/T2G R1 Resistor Ratio UMC2NT1G UMC3NT1G UMC5NT1G/T2G R1/R2 http://onsemi.com 3 Vdc Vdc Vdc kW UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G ORDERING INFORMATION Package Shipping UMC2NT1G SC-88A/SOT-353 (Pb-Free) 3,000 / Tape & Reel NSVUMC2NT1G SC-88A/SOT-353 (Pb-Free) 3,000 / Tape & Reel UMC3NT1G SC-88A/SOT-353 (Pb-Free) 3,000 / Tape & Reel NSVUMC3NT1G SC-88A/SOT-353 (Pb-Free) 3,000 / Tape & Reel UMC3NT2G SC-88A/SOT-353 (Pb-Free) 3,000 / Tape & Reel UMC5NT1G SC-88A/SOT-353 (Pb-Free) 3,000 / Tape & Reel UMC5NT2G SC-88A/SOT-353 (Pb-Free) 3,000 / Tape & Reel NSVUMC5NT2G SC-88A/SOT-353 (Pb-Free) 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING AND RESISTOR VALUES Transistor 1 - PNP Device UMC2NT1G, NSVUMC2NT1G UMC3NT1G, NSVUMC3NT1G UMC3NT2G UMC5NT1G UMC5NT2G, NSVUMC5NT2G Transistor 2 - NPN Marking R1 (K) R2 (K) R1 (K) R2 (K) U2 U3 U3 U5 U5 22 10 10 4.7 4.7 22 10 10 10 10 22 10 10 47 47 22 10 10 47 47 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 -50 RqJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 4 150 UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G 1000 10 VCE = 10 V IC/IB = 10 1 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC2NT1G, NSVUMC2NT1G PNP TRANSISTOR 25C TA=-25C 75C 0.1 0.01 TA=75C 25C -25C 100 10 0 40 20 IC, COLLECTOR CURRENT (mA) 10 1 50 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 25C 75C f = 1 MHz lE = 0 mA TA = 25C TA=-25C 10 1 0.1 0.01 0.001 50 Figure 4. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (V) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 50 10 UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G 1 1000 IC/IB = 10 VCE = 10 V TA=-25C 25C hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC2NT1G, NSVUMC2NT1G NPN TRANSISTOR 0.1 75C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) 25C 75C f = 1 MHz IE = 0 mA TA = 25C 1 0.1 0.01 VO = 5 V 0.001 50 TA=-25C 10 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (V) 10 VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 10 Figure 10. Output Current versus Input Voltage Figure 9. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 50 UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G 1000 1 VCE = 10 V IC/IB = 10 hFE , DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC3NT1G PNP TRANSISTOR TA=-25C 0.1 25C 75C 0.01 20 10 -25C 10 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 40 50 4 1 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (V) TA=-25C 10 1 0.1 0.01 0.001 50 VO = 5 V 0 Figure 14. Output Capacitance 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (V) VO = 0.2 V TA=-25C 10 25C 75C 1 0 10 8 9 Figure 15. Output Current versus Input Voltage 100 0.1 100 25C 75C f = 1 MHz lE = 0 mA TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 25C 100 IC, COLLECTOR CURRENT (mA) 0 0 TA=75C 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 16. Input Voltage versus Output Current http://onsemi.com 7 50 10 UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G 1000 1 VCE = 10 V IC/IB = 10 25C hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC3NT1G NPN TRANSISTOR TA=-25C 0.1 75C 0.01 -25C 100 10 0.001 0 20 50 40 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 3 2 1 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0 0 10 0.001 50 20 30 40 VR, REVERSE BIAS VOLTAGE (V) Figure 19. Output Capacitance 2 0 4 6 Vin, INPUT VOLTAGE (V) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 20. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C 25C 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current http://onsemi.com 8 50 UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G 1000 1 VCE = 10 V IC/IB = 10 TA=75C 25C 0.1 0.01 TA=75C hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC5NT1G PNP TRANSISTOR -25C 20 10 30 50 40 60 100 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 1000 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 mA TA = 25C 10 Cob , CAPACITANCE (pF) 10 1 IC, COLLECTOR CURRENT (mA) 12 8 6 4 SERIES 1 2 0 -25C 10 1 0 25C 100 75C 10 1 VO = 5 V 0.1 0.01 0 5 10 20 30 15 25 35 VR, REVERSE BIAS VOLTAGE (V) 40 45 Figure 24. Output Capacitance TA=-25C 25C 0 2 4 6 8 Vin, INPUT VOLTAGE (V) 10 12 Figure 25. Output Current versus Input Voltage http://onsemi.com 9 UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G 10 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- UMC5NT1G NPN TRANSISTOR 1 25C TA=-25C 75C 0.1 TA=75C 25C -25C 100 0.01 0 10 50 20 40 IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) 1 Figure 26. VCE(sat) versus IC Figure 27. DC Current Gain 1 100 f = 1 MHz IE = 0 mA TA = 25C IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 10 20 30 VR, REVERSE BIAS VOLTAGE (V) 25C 75C 0.6 1 0.1 0.01 VO = 5 V 0.001 50 40 TA=-25C 10 0 Figure 28. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (V) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 29. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 30. Input Voltage versus Output Current http://onsemi.com 10 UMC2NT1G, NSVUMC2NT1G, UMC3NT1G, NSVUMC3NT1G, UMC5NT1G, NSVUMC5NT2G PACKAGE DIMENSIONS SC-88A (SC-70-5/SOT-353) CASE 419A-02 ISSUE K A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A-01 OBSOLETE. NEW STANDARD 419A-02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 -B- S 1 2 DIM A B C D G H J K N S 3 D 5 PL 0.2 (0.008) B M M N INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 STYLE 6: PIN 1. EMITTER 2 2. BASE 2 3. EMITTER 1 4. COLLECTOR 5. COLLECTOR 2/BASE 1 J C K H SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 11 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative UMC2NT1/D