Kwun Tong P.O. Box 69477 Hong Kong. Fax No. 2341 0321 Telex43510 Micro Hx. Tel 2343 0181-5 So > | 7 AVR RE IU YS roy fe fe PNP z SILICON TRANSISTOR TO-92A DESCRIPTION . . 04.6860.18) MPS8599 is PNP silicon transistor rT designed for general purpose amplifier T applications for audio circuits. 46ca1o- 358 r ba KO.14 . (0,016) (02) 2 : 24 ant COD BOTTOM VIEW CB ye te 0.450.018) UNIT: MMCINCH) ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage VCBO 80V Collector-Emitter Voltage VCEO 80V Emitter-Base Voltage VEBO 5V Collector Current IC 200mA Continuous Power Dissipation Pd 350mW Operating & Storage Junction Temperature Tj, Tstg -55 to +150C ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) PARAMETER SYMBOL | MIN MAX} UNIT CONDITIONS Collector-Emitter Breakdown Voltage | LVCEO 80 Vo sIC=0.5mA TB=0 Collector-Base Breakdown Voltage BVCBO 80 Vv Emtter-Base Breakdown Voltage BVEBO 5 VV {FE=10pA ICc=0 Collector Cutoff Current ICEO i pA |VCE=60V IB=0 Collector Cutoff Current ICBO 100 nA {VCB=80V TE=0 Emitter Cutoff Current IEBO 100 nA |VEB=5V Ic=0 D.C. Current Gain HFE* 100 =. 300 IC=ImA VCE=5V 100 1C=10mA VCE=5V 75 IC=100mA WCE=5V Collector-Emitter Saturation Voltage | VCE(sat) 0.4 Y IC=100mA IB=5mA 0.3 VV HC=100mA IB=10mA Base-Emitter Voltage VBE 0.8 Vo YC=10mA VCE=5V Current Gain Bandwidth Product {T 150 MHz jIC=10mA VCE=5V f=100MHz Output Capacitance Cob 8 pF |VCB=5V TE=6 fFiMHz Input Capacitance Cib 39 pF iVEB=05V IC-0 f1MHz * Pulse test : pulse width <300pS, duty cycle < 2%. MICRO ELECTRONICS LTD. 38, Hung To Road, Microfron Bulding, Kwun Tong, Kowloon, Hong Kong. May-99