SOT223 PNP SILICON PLANAR HIGH CURRENT
(HIGH PERFORMANCE) TRANSISTORS
ISSUE 3 - APRIL 2000
FEATURES
* 5 Amps continuous current , up to 15 Amps peak current
* Very low saturation voltages
* Excellent gain characteristics specified up to 10 Amps
*Ptot = 3 watts
* FZT951 exhibts extremely low equivalent on resistance;
RCE(sat) 55m
at 4A
COMPLEMENTARY TYPES - FZT951 = FZT851
FZT953 = FZT853
PARTMARKING DETAILS - DEVICE TYPE IN FULL
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL FZT951 FZT953 UNIT
Collector-Base Voltage VCBO -100 -140 V
Collector-Emitter Voltage VCEO -60 -100 V
Emitter-Base Voltage VEBO -6 V
Peak Pulse Current ICM -15 -10 A
Continuous Collector Current IC-5 A
Power Dissipation at Tamb
=25°C Ptot 3W
Operating and Storage Temperature
Range Tj:Tstg -55 to +150 °C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 4 square inch minimum
FZT951
FZT953
C
C
E
B
3 - 279
3 - 280 3 - 281
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
CE(sat)
- (Volts)
T
amb
=25°C
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
CE(sat)
- (Volts)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
- Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- Normalised Gain
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10V
CE
=1V
V
CE
=1V
300
200
100
h
FE
- Typical Gain
V
CE
- Collector Voltage (Volts)
Safe Op e rating Area
0.1 100110
0.1
1
10
100 Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.0010.001
FZT951
FZT951
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V(BR)CBO -100 -140 V IC=-100
A
Collector-Emitter Breakdown
Voltage V(BR)CER -100 -140 V IC=-1
A, RB
1k
Collector-Emitter Breakdown
Voltage V(BR)CEO -60 -90 V IC=-10mA*
Emitter-Base Breakdown
Voltage V(BR)EBO -6 -8 V IE=-100
A
Collector Cut-Off Current ICBO -50
-1 nA
AVCB=-80V
VCB=-80V, Tamb
=100°C
Collector Cut-Off Current ICER
R
1k
-50
-1 nA
AVCB=-80V
VCB=-80V, Tamb
=100°C
Emitter Cut-Off Current IEBO -10 nA VEB=-6V
Collector-Emitter Saturation
Voltage VCE(sat) -20
-85
-155
-370
-50
-140
-210
-460
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-5A, IB=-500mA*
Base-Emitter
Saturation Voltage VBE(sat) -1080 -1240 mV IC=-5A, IB=-500mA*
Base-Emitter
Turn-On Voltage VBE(on) -935 -1070 mV IC=-5A, VCE=-1V*
Static Forward
Current Transfer Ratio hFE 100
100
75
10
200
200
90
25
300 IC=-10mA, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
Transition Frequency fT120 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance Cobo 74 pF VCB=-10V, f=1MHz
Switching Times ton
toff
82
350 ns
ns IC=-2A, IB1=-200mA
IB2=200mA, VCC
=-10V
* Measured under pulsed conditions. Pulse width =300
s. duty cycle
2%
Spice parameter data is available upon request for this device
3 - 280 3 - 281
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
0
1.0
0.8
0.6
0.4
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
CE(sat)
- (Volts)
T
amb
=25°C
V
CE(sat)
v I
C
I
C
- Collector Current (Amps)
V
CE(sat)
- (Volts)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
I
C
- Collector Current (Amps)
V
BE(on)
v I
C
h
FE
- Normalised Gain
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10V
CE
=1V
V
CE
=1V
300
200
100
h
FE
- Typical Gain
V
CE
- Collector Voltage (Volts)
Safe Op e rating Area
0.1 100110
0.1
1
10
100 Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001
0.001
0.001
0.0010.001
FZT951
FZT951
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V(BR)CBO -100 -140 V IC=-100
A
Collector-Emitter Breakdown
Voltage V(BR)CER -100 -140 V IC=-1
A, RB
1k
Collector-Emitter Breakdown
Voltage V(BR)CEO -60 -90 V IC=-10mA*
Emitter-Base Breakdown
Voltage V(BR)EBO -6 -8 V IE=-100
A
Collector Cut-Off Current ICBO -50
-1 nA
AVCB=-80V
VCB=-80V, Tamb
=100°C
Collector Cut-Off Current ICER
R
1k
-50
-1 nA
AVCB=-80V
VCB=-80V, Tamb
=100°C
Emitter Cut-Off Current IEBO -10 nA VEB=-6V
Collector-Emitter Saturation
Voltage VCE(sat) -20
-85
-155
-370
-50
-140
-210
-460
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-5A, IB=-500mA*
Base-Emitter
Saturation Voltage VBE(sat) -1080 -1240 mV IC=-5A, IB=-500mA*
Base-Emitter
Turn-On Voltage VBE(on) -935 -1070 mV IC=-5A, VCE=-1V*
Static Forward
Current Transfer Ratio hFE 100
100
75
10
200
200
90
25
300 IC=-10mA, VCE=-1V*
IC=-2A, VCE=-1V*
IC=-5A, VCE=-1V*
IC=-10A, VCE=-1V*
Transition Frequency fT120 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance Cobo 74 pF VCB=-10V, f=1MHz
Switching Times ton
toff
82
350 ns
ns IC=-2A, IB1=-200mA
IB2=200mA, VCC
=-10V
* Measured under pulsed conditions. Pulse width =300
s. duty cycle
2%
Spice parameter data is available upon request for this device
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V(BR)CBO -140 -170 V IC=-100
A
Collector-Emitter Breakdown
Voltage V(BR)CER -140 -170 V IC=-1
A, RB
1k
Collector-Emitter Breakdown
Voltage V(BR)CEO -100 -120 V IC=-10mA*
Emitter-Base Breakdown
Voltage V(BR)EBO -6 -8 V IE=-100
A
Collector Cut-Off Current ICBO -50
-1 nA
AVCB
=-100V
VCB
=-100V, Tamb
=100°C
Collector Cut-Off Current ICER
R
1k
-50
-1 nA
AVCB
=-100V
VCB
=-100V, Tamb
=100°C
Emitter Cut-Off Current IEBO -10 nA VEB=-6V
Collector-Emitter Saturation
Voltage VCE(sat) -20
-90
-160
-300
-50
-115
-220
-420
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-4A, IB=-400mA*
Base-Emitter
Saturation Voltage VBE(sat) -1010 -1170 mV IC=-4A, IB=-400mA*
Base-Emitter
Turn-On Voltage VBE(on) -925 -1160 mV IC=-4A, VCE=-1V*
Static Forward
Current Transfer hFE 100
100
50
30
200
200
90
50
15
300 IC=-10mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-3A, VCE=-1V*
IC=-4A, VCE=-1V*
IC=-10A, VCE=-1V*
Transition Frequency fT125 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance Cobo 65 pF VCB
=-10V, f=1MHz
Switching Times ton
toff
110
460 ns
ns IC=-2A, IB1=-200mA
IB2=200mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
3 - 283
FZT953
3 - 282
FZT953
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V
CE(sat)
- (Volts)
T
amb
=25°C
VCE(sat) v IC
I
C
- Collector Current (Amps)
V
CE(sat)
- (Volts)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h
FE
- Normalised Gain
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10V
CE
=1V
V
CE
=1V
300
200
100
hFE - Typical Gain
V
CE
- Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10 Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001 0.001
0.001
0.001
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V(BR)CBO -140 -170 V IC=-100
A
Collector-Emitter Breakdown
Voltage V(BR)CER -140 -170 V IC=-1
A, RB
1k
Collector-Emitter Breakdown
Voltage V(BR)CEO -100 -120 V IC=-10mA*
Emitter-Base Breakdown
Voltage V(BR)EBO -6 -8 V IE=-100
A
Collector Cut-Off Current ICBO -50
-1 nA
AVCB
=-100V
VCB
=-100V, Tamb
=100°C
Collector Cut-Off Current ICER
R
1k
-50
-1 nA
AVCB
=-100V
VCB
=-100V, Tamb
=100°C
Emitter Cut-Off Current IEBO -10 nA VEB=-6V
Collector-Emitter Saturation
Voltage VCE(sat) -20
-90
-160
-300
-50
-115
-220
-420
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-1A, IB=-100mA*
IC=-2A, IB=-200mA*
IC=-4A, IB=-400mA*
Base-Emitter
Saturation Voltage VBE(sat) -1010 -1170 mV IC=-4A, IB=-400mA*
Base-Emitter
Turn-On Voltage VBE(on) -925 -1160 mV IC=-4A, VCE=-1V*
Static Forward
Current Transfer hFE 100
100
50
30
200
200
90
50
15
300 IC=-10mA, VCE=-1V*
IC=-1A, VCE=-1V*
IC=-3A, VCE=-1V*
IC=-4A, VCE=-1V*
IC=-10A, VCE=-1V*
Transition Frequency fT125 MHz IC=-100mA, VCE=-10V
f=50MHz
Output Capacitance Cobo 65 pF VCB
=-10V, f=1MHz
Switching Times ton
toff
110
460 ns
ns IC=-2A, IB1=-200mA
IB2=200mA, VCC=-10V
*Measured under pulsed conditions. Pulse width=300
s. Duty cycle
2%
Spice parameter data is available upon request for this device
3 - 283
FZT953
3 - 282
FZT953
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 20
110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V
CE(sat)
- (Volts)
T
amb
=25°C
VCE(sat) v IC
I
C
- Collector Current (Amps)
V
CE(sat)
- (Volts)
-55°C
+25°C
+175°C
-55°C
+25°C
+100°C
+175°C
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h
FE
- Normalised Gain
V
BE(sat)
- (Volts)
V
BE
- (Volts)
I
C
- Collector Current (Amps)
I
C
/I
B
=10
I
C
/I
B
=10
I
C
/I
B
=50
I
C
/I
B
=10V
CE
=1V
V
CE
=1V
300
200
100
hFE - Typical Gain
V
CE
- Collector Voltage (Volts)
Safe Operating Area
0.1 100110
0.01
0.1
1
10 Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.001 0.001
0.001
0.001
