Planeta JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
E l e c t r o n i c c o m p a n y Ph/Fax: +7 (81622) 3-17-36, 3-32-86 E-mail: planeta@novgorod.net
http://www.novgorod.net/~planeta
2N6027
Silicon programmable unijunction transistor (PUT′s)
in package TO-92
2.5
0.7max
5.2
1.6
0.45max
14.5
4.2
5.2
1
2
3
Ratings (TA = 25°C)
Symbol Parameter, units Limits
VAK *Anode to cathode voltage, V ±±40
VGKF *Gate to cathode forward voltage, V 40
VGKR *Gate to cathode reverse voltage, V -5
VGAR *Gate to anode reverse voltage, V 40
IT *DC forward anode current, mA 150
ITRM Repetitive peak forward current, A
100µs Pulse width, 1% duty cycle
*20µs Pulse width, 1% duty cycle
1
2
PT *Power dissipation, mW 300
* - Anode positive, RGA =1000Ω;
Anode negative, RGA=open
Electrical Characteristics (TA = 25°C)
Symbol Parameter, units, Limits
test conditions min typ max
IP Peak current, µA,
VS=10V, RG=10kΩ
4
5
IGAO Gate to anode leakage current, nA,
VS=40V, cathode open
1
10
IGKS Gate to cathode leakage current, nA,
VS=40V, anode to cathode shorted
5
50
VF Forward voltage, V,
IF=50mA Peak
0.8
1.5
VO Peak output voltage, V,
VG=20V, CC=0.2 µF
6
11
VT Offset voltage, V
VS=10V, RG=10kΩ
0.2
0.35
0.6
IV Valley current, µA,
VS=10V, RG=10kΩ 70
150
tR Pulse voltage rise time, ns
VB=20V, CC =0.2 µF
40
80
Pinouts:
1- Cathode, 2- Gate, 3- Anode
