SB170 - SB1100 NEW PRODUCT 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features * * * * * * Schottky Barrier Chip * * High Temperature Soldering: 260C/10 Second at Terminal Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency B A Surge Overload Rating to 25A Peak A For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application C Lead Free Finish, RoHS Compliant (Note 3) D Mechanical Data * * Case: DO-41 * * Moisture Sensitivity: Level 1 per J-STD-020C * * * * * Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 DO-41 Terminals: Finish 3/4 Bright Tin. Plated Leads - Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Mounting Position: Any Ordering Information: See Last Page Dim Min Max A 25.4 3/4 B 4.1 5.2 C 0.71 0.86 D 2.0 2.7 All Dimensions in mm Marking: Type Number Weight: 0.3 grams (approximate) Maximum Ratings and Electrical Characteristics @ TA = 25C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Symbol SB170 SB180 SB190 SB1100 Unit VRRM VRWM VR 70 80 90 100 V VR(RMS) 49 56 63 70 V IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 25 A Forward Voltage @ IF = 1.0A @ TA = 25C VFM 0.80 V Peak Reverse Current at Rated DC Blocking Voltage @ TA = 25C @ TA = 100C IRM 0.5 10 mA Average Rectified Output Current @ TT = 85C Cj 80 pF Typical Thermal Resistance Junction to Lead RqJL 15 K/W Typical Thermal Resistance Junction to Ambient (Note 1) RqJA 50 K/W Tj, TSTG -65 to +125 C Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Notes: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7. DS30116 Rev. 3 - 1 1 of 2 www.diodes.com SB170 - SB1100 a Diodes Incorporated IF, INSTANTANEOUS FORWARD CURRENT (A) I(O), AVERAGE FORWARD CURRENT (A) 0.5 0 25 50 75 100 125 10 1.0 Tj = 25 C 0.1 150 0.1 TL, LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve 0.9 1.3 1.7 2.1 1000 40 Single Half Sine-Wave (JEDEC Method) Tj = 150 C 30 20 10 Tj = 25 C f = 1.0MHz 100 10 0 1 10 0.1 100 Ordering Information 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Notes: 0.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) NEW PRODUCT 1.0 20 (Note 4) Device Packaging Shipping SB170-A DO-41 5K/Ammo Pack SB170-B DO-41 1K/Bulk SB170-T DO-41 5K/Tape & Reel, 13-inch SB180-A DO-41 5K/Ammo Pack SB180-B DO-41 1K/Bulk SB180-T DO-41 5K/Tape & Reel, 13-inch SB190-A DO-41 5K/Ammo Pack SB190-B DO-41 1K/Bulk SB190-T DO-41 5K/Tape & Reel, 13-inch SB1100-A DO-41 5K/Ammo Pack SB1100-B DO-41 1K/Bulk SB1100-T DO-41 5K/Tape & Reel, 13-inch 4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf DS30116 Rev. 3 - 1 2 of 2 www.diodes.com SB170 - SB1100