ZXMN6A08E6
ISSUE 1 - MARCH 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 60 V ID=250A, VGS=0V
Zero Gate Voltage Drain Current IDSS 0.5 AV
DS=60V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=⫾20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 1VI
D=250A, VDS=V
GS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.100
0.180 ⍀
⍀
VGS=10V, ID=4.8A
VGS=4.5V, ID=4.2A
Forward Transconductance (1)(3) gfs 6.6 S VDS=15V,ID=4.8A
DYNAMIC (3)
Input Capacitance Ciss 459 pF VDS=40V,V
GS=0V,
f=1MHz
Output Capacitance Coss 44.2 pF
Reverse Transfer Capacitance Crss 24.1 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.6 ns
VDD =30V, ID=1.5A
RG=6.0⍀,V
GS=10V
Rise Time tr2.1 ns
Turn-Off Delay Time td(off) 12.3 ns
Fall Time tf4.6 ns
Gate Charge Qg4.0 nC VDS=30V,VGS=5V,
ID=1.4A
Total Gate Charge Qg5.8 nC VDS=30V,VGS=10V,
ID=1.4A
Gate-Source Charge Qgs 1.4 nC
Gate-Drain Charge Qgd 1.9 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.88 1.2 V TJ=25°C, IS=4A,
VGS=0V
Reverse Recovery Time (3) trr 19.2 ns TJ=25°C, IF=1.4A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 30.3 nC
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.