SUMMARY
V(BR)DSS= 60V; RDS(ON)= 0.100 ID= 3.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
DEVICE MARKING
6A8
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60V N-CHANNEL ENHANCEMENT MODE MOSFET
DEVICE REEL
SIZE TAPE
WIDTH QUANTITY
PER REEL
ZXMN6A08E6TA 7 8mm 3000 units
ZXMN6A08E6TC 13 8mm 10000 units
ORDERING INFORMATION
Top View
SOT23-6
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PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 113 °C/W
Junction to Ambient (b) RθJA 73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS 60 V
Gate Source Voltage VGS 20 V
Continuous Drain Current VGS=10V; TA=25°C (b)
VGS=10V; TA=70°C (b)
VGS=10V; TA=25°C (a)
ID3.0
2.4
2.4
A
Pulsed Drain Current (c) IDM 4.0 A
Continuous Source Current (Body Diode) (b) IS2.6 A
Pulsed Source Current (Body Diode) (c) ISM 6.4 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD1.1
8.8 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD1.7
13.6 W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ABSOLUTE MAXIMUM RATINGS.
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CHARACTERISTICS
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PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS 60 V ID=250A, VGS=0V
Zero Gate Voltage Drain Current IDSS 0.5 AV
DS=60V, VGS=0V
Gate-Body Leakage IGSS 100 nA VGS=20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) 1VI
D=250A, VDS=V
GS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.100
0.180
VGS=10V, ID=4.8A
VGS=4.5V, ID=4.2A
Forward Transconductance (1)(3) gfs 6.6 S VDS=15V,ID=4.8A
DYNAMIC (3)
Input Capacitance Ciss 459 pF VDS=40V,V
GS=0V,
f=1MHz
Output Capacitance Coss 44.2 pF
Reverse Transfer Capacitance Crss 24.1 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.6 ns
VDD =30V, ID=1.5A
RG=6.0,V
GS=10V
Rise Time tr2.1 ns
Turn-Off Delay Time td(off) 12.3 ns
Fall Time tf4.6 ns
Gate Charge Qg4.0 nC VDS=30V,VGS=5V,
ID=1.4A
Total Gate Charge Qg5.8 nC VDS=30V,VGS=10V,
ID=1.4A
Gate-Source Charge Qgs 1.4 nC
Gate-Drain Charge Qgd 1.9 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD 0.88 1.2 V TJ=25°C, IS=4A,
VGS=0V
Reverse Recovery Time (3) trr 19.2 ns TJ=25°C, IF=1.4A,
di/dt= 100A/µs
Reverse Recovery Charge (3) Qrr 30.3 nC
ELECTRICAL CHARACTERISTICS (at TA= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
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TYPICAL CHARACTERISTICS
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TYPICAL CHARACTERISTICS
Zetex plc
Fields New Road
Chadderton
Oldham, OL9 8NP
United Kingdom
Telephone (44) 161 622 4422
Fax: (44) 161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY11788
USA
Telephone: (631) 360 2222
Fax: (631) 360 8222
Zetex (Asia) Ltd
3701-04 Metroplaza, Tower 1
Hing Fong Road
Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
© Zetex plc 2002
ZXMN6A08E6
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A1
2
L
DATUM A
a
C
E
AA2
E1
D
be
e1
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
DIM Millimetres Inches
Min Max Min Max
A 0.90 1.45 0.35 0.057
A1 0.00 0.15 0 0.006
A2 0.90 1.30 0.035 0.051
b 0.35 0.50 0.014 0.019
C 0.09 0.20 0.0035 0.008
D 2.80 3.00 0.110 0.118
E 2.60 3.00 0.102 0.118
E1 1.50 1.75 0.059 0.069
L 0.10 0.60 0.004 0.002
e 0.95 REF 0.037 REF
e1 1.90 REF 0.074 REF
L 10° 10°