2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6298 series types are complementary silicon darlington power transistors manufactured by the epitaxial base process designed for high gain amplifier and medium speed switching applications. MARKING: FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS: (TC=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current SYMBOL VCBO VCEO Thermal Resistance ELECTRICAL SYMBOL ICEV ICEV UNITS V 60 80 V 5.0 V 8.0 A ICM IB 16 A 120 mA Continuous Base Current Operating and Storage Junction Temperature 2N6299 2N6301 80 VEBO IC Peak Collector Current Power Dissipation 2N6298 2N6300 60 PD TJ, Tstg JC CHARACTERISTICS: (TC=25C unless otherwise noted) TEST CONDITIONS MIN VCE=Rated VCEO, VBE=1.5V 75 W -65 to +200 C 2.33 C/W MAX 0.5 UNITS mA VCE=Rated VCEO, VBE=1.5V, TC=150C VCE=1/2Rated VCEO 5.0 mA ICEO 0.5 mA IEBO VEB=5.0V 2.0 mA BVCEO IC=100mA (2N6298, 2N6300) 60 V BVCEO IC=100mA (2N6299, 2N6301) 80 V VCE(SAT) IC=4.0A, IB=16mA 2.0 VCE(SAT) IC=8.0A, IB=80mA 3.0 V VBE(SAT) VCE=8.0V, IC=80mA VCE=3.0V, IC=4.0A VCE=3.0V, IC=4.0A 4.0 V 2.8 V VBE(ON) hFE hFE hfe VCE=3.0V, VCE=3.0V, IC=8.0A Cob IC=3.0A, f=1.0kHz VCE=3.0V, IC=3.0A, f=1.0MHz VCB=10V, IE=0, f=100kHz (NPN Types) Cob VCB=10V, IE=0, f=100kHz (PNP Types) fT 750 V 18K 100 300 4.0 MHz 200 pF 300 pF R1 (21-June 2012) 2N6298 2N6299 2N6300 2N6301 PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER R1 (21-June 2012) w w w. c e n t r a l s e m i . c o m