NTP5864N Power MOSFET 60 V, 63 A, 12.4 mW Features * * * * Low RDS(on) High Current Capability Avalanche Energy Specified These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX (Note 1) 60 V 12.4 m @ 10 V 63 A MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Units Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage - Continuous VGS 20 V Gate-to-Source Voltage - Non-Repetitive (tp = 10 s) VGS 30 V ID 63 A Continuous Drain Current - RJC (Note 1) Power Dissipation - RJC (Note 1) Steady State TC = 25C TC = 100C 107 IDM 252 A TJ, TSTG -55 to 175 C IS 63 A Single Pulse Drain-to Source Avalanche Energy - (L = 0.1 mH) EAS 80 mJ IAS 40 A Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C Pulsed Drain Current TC = 25C TC = 100C tp = 10 s Operating Junction and Storage Temperature Source Current (Body Diode) Pulsed G S W 54 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter D 45 PD Steady State N-Channel Symbol Max Units Junction-to-Case (Drain) - Steady State (Note 1) RJC 1.4 C/W Junction-to-Ambient - Steady State (Note 1) RJA 33 C/W 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces). MARKING DIAGRAM & PIN ASSIGNMENT TO-220AB CASE 221A STYLE 5 1 2 3 A Y WW G June, 2011 - Rev. 0 NTP5864NG AYWW 1 Gate = Assembly Location = Year = Work Week = Pb-Free Package 3 Source 2 Drain ORDERING INFORMATION Device NTP5864NG (c) Semiconductor Components Industries, LLC, 2011 4 Drain 4 1 Package Shipping TO-220 (Pb-Free) 50 Units / Rail Publication Order Number: NTP5864N/D NTP5864N ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 60 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Typ Max Unit OFF CHARACTERISTICS V 58 Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V TJ = 25C Gate-to-Source Leakage Current IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 A mV/C 1.0 A 100 nA 4.0 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance VGS(TH)/TJ 2.0 -10 mV/C RDS(on) VGS = 10 V, ID = 20 A 10.2 12.4 gFS VDS = 15 V, ID = 20 A 10 S 1680 pF m CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 0 V, f = 1.0 MHz, VDS = 25 V 189 124 nC Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD 10 Rg 0.5 10 ns Gate Resistance 31 VGS = 10 V, VDS = 48 V, ID = 20 A 2.0 7.3 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) VGS = 10 V, VDD = 48 V, ID = 20 A, RG = 2.5 tf 6.4 18 4.6 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.94 TJ = 125C 0.84 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 40 A 24 VGS = 0 V, dISD/dt = 100 A/s, IS = 20 A QRR http://onsemi.com 2 V ns 16 7.9 20 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTP5864N TYPICAL CHARACTERISTICS 125 VGS = 10 V 7.5 V TJ = 25C VDS 10 V 7V 100 6.5 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 125 5.5 V 75 5.0 V 50 4.5 V 25 100 75 50 TJ = 25C 25 TJ = 125C 0 1 2 3 4 0 5 2 4 3 5 6 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 0.030 ID = 20 A TJ = 25C 0.025 0.020 0.015 7 0.0115 VGS = 10 V TJ = 25C 0.0110 0.0105 0.010 0.0100 0.005 0.000 4 5 6 7 8 9 10 VGS, GATE-TO-SOURCE VOLTAGE (V) 0.0095 10 20 25 30 35 40 45 50 55 60 Figure 4. On-Resistance vs. Drain Current 100000 2.2 2.0 15 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate Voltage ID = 20 A VGS = 10 V VGS = 0 V 1.8 IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) TJ = -55C VDS, DRAIN-TO-SOURCE VOLTAGE (V) RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE () 0 10000 1.6 1.4 1.2 1.0 TJ = 150C TJ = 125C 1000 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 100 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 60 NTP5864N TYPICAL CHARACTERISTICS 10 VGS = 0 V TJ = 25C 2000 VGS, GATE-TO-SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 2500 Ciss 1500 1000 500 Coss 0 0 Crss 10 20 30 40 50 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 60 QT 8 6 Qgs 4 2 0 ID = 20 A TJ = 25C 0 5 10 15 20 25 30 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source vs. Total Charge 1000 100 VDD = 48 V ID = 20 A VGS = 10 V IS, SOURCE CURRENT (A) td(off) td(on) 10 VGS = 0 V TJ = 25C 90 100 t, TIME (ns) Qgd tr tf 80 70 60 50 40 30 20 10 1 1 10 100 0.60 0.70 0.80 0.90 1.00 1.10 1.20 RG, GATE RESISTANCE () VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current 80 100 s 1 ms 10 ms dc 100 10 s AVALANCHE ENERGY (mJ) ID, DRAIN CURRENT (A) 0.50 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 10 VGS = 10 V SINGLE PULSE TC = 25C 1 0.1 0 0.40 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) ID = 40 A 70 60 50 40 30 20 10 0 25 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE Figure 11. Maximum Rated Forward Biased Safe Operating Area 175 Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTP5864N TYPICAL CHARACTERISTICS RJC(t) (C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) Figure 13. Thermal Response http://onsemi.com 5 0.1 1 10 NTP5864N PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AF -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 5: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 GATE DRAIN SOURCE DRAIN ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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