TIP152
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NPN Silicon power darlington transistors are designed for use in
automotive ignition. Switching and motor control applications.
Features:
•Collector-emitter sustaining voltage
VCEO(SUS) = 400V (minimum).
•Collector-emitter saturation voltage
VCE(sat) = 2.0V (maximum) at IC= 5.0A.
•Reverse-base SOA at 300V to 400V at 7A.
Dimensions Minimum Maximum
A 14.68 15.31
B 9.78 10.42
C 5.01 6.52
D 13.06 14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
Pin 1. Base
2. Collector
3. Emitter
4. Collector(Case)
NPN
TIP152
TO-220
7 Ampere
Darlingtion
Power Transistors
300 to 400 Volts
80 Watts
TIP152
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Maximum Ratings
Parameter Symbol TIP152 Unit
Collector-Emitter Voltage VCEO 400 VCollector-Base Voltage VCBO
Emitter-Base Voltage VEBO 8.0
Collector Current-Continuous
-Peak IC
ICM
7.0
1.0 A
Base Current IB1.5
Total Power Dissipation at TC= 25°C
Derate above 25°C PD80
0.64 W
W/°C
Operating and Storage Junction
Temperature Range TJ, TSTG -65 to +150 °C
Thermal Characteristics
Characteristic Symbol Maximum Unit
Thermal Resistance Junction to Case Rθjc 1.56 °C/W
Power Derating
TC, Temperature (°C)
PD, Power Dissipation (Watts)
TIP152
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Electrical Characteristics (Tc= 25°C unless otherwise noted
(1) Pulse Test : Pulse width: ≤300µs, Duty Cycle ≤2.0%.
Parameter Symbol Minimum Maximum Unit
Off Characteristics
Collector-Emitter Breakdown Voltage (1)
(IC= 10mA, IB= 0) TIP152 V(BR) CEO
400
-
V
Collector-Base Breakdown Voltage (1)
(IC= 1.0mA, IB= 0) TIP152 V(BR) CBO -
Collector Cut off Current
(VCE = 400V, IB= 0) TIP152 ICEO - 250 µA
Emitter Cut off Current
(VEB = 8.0V, IC= 0) IEBO - 15 mA
On Characteristics (1)
DC Current Gain
(IC = 2.5A, VCE = 5.0V)
(IC = 5.0A, VCE = 5.0V)
(IC= 7.0A, VCE = 5.0V)
hFE 150
50
15 - -
Collector-Emitter Saturation Voltage
(IC= 1.0A, IB= 10mA)
(IC= 2.0A, IB= 100mA)
(IC= 5.0A, IB = 250mA)
VCE (sat) -1.5
1.5
2.0
V
Base-Emitter Saturation Voltage
(IC= 2.0A, IB= 100mA)
(IC = 5.0A, IB= 250mA) VBE (sat) -2.2
2.3
Diode Forward Voltage
(IF= 7.0A) VF- 3.5
Dynamic Characteristics
Small-Signal Current Gain
(IC= 0.5A, VCE = 5.0V, f = 1.0KHz) hfe 200 - -
Output Capacitance
(VCB = 10V, IE= 0, f = 1.0MHz) Cob - 150 pF
Switching Characteristics
Delay Time
VCC = 250V, IC= 5.0A
IB1= -IB2 = 250mA,
tp = 200µS, Duty Cycle ≤2.0%
td30 (Typical) -ns
Rise Time tr180 (Typical) -
Storage Time ts3.5 (Typical) -
µs
Fall Time tf1.6 (Typical) -
TIP152
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DC Current Gain
IC, Collector Current (AMP)
hFE, DC Current Gain
Baes-Emitter Voltage
IC, Collector Current (AMP)
VBE, Base-Emitter Voltage (Volts)
Collector-Emitter Saturation Voltage
IC, Collector Current (AMP)
VCE, Collector-Emitter Saturation
Voltage (Volts)
Reverse Bias Safe Operating Area
VCE, Collector Emitter (Volts)
IC, Collector Current (Amp)
TIP152
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IC, Collector Current (Amp)
VCE, Collector Emitter Voltage (Volts)
Active Region Safe Operating Area There are two limitation on the power handling ability of a
transistor:average junction temperature and second breakdown
safe operating area curves indicate IC-VCE limits of the
transistor that must be observed for reliable operation i.e., the
transistor must not be subjected to greater dissipation than
curves indicate.
The data of curve is base on TJ(PK) = 150°C; TCis variable
depending on power level. second breakdown pulse limits are
valid for duty cycles to 10% provided TJ(PK) ≤150°C, At high
case temperatures, thermal limitation will reduce the power
that can be handled to values less than the limitations imposed
by second breakdown.
Part Number Table
Description Part Number
Darlington Transistor, TO-220 TIP152
For enquiries from all other markets
TIP152
Page <6> 11/06/08 V1.1
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