Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FOD3180 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Features Description Guaranteed operating temperature range of -40C to The FOD3180 is a 2A Output Current, High Speed MOSFET Gate Drive Optocoupler. It consists of a aluminium gallium arsenide (AlGaAs) light emitting diode optically coupled to a CMOS detector with PMOS and NMOS output power transistors integrated circuit power stage. It is ideally suited for high frequency driving of power MOSFETs used in Plasma Display Panels (PDPs), motor control inverter applications and high performance DC/DC converters. +100C 2A minimum peak output current High speed response: 200ns max propagation delay over temperature range 250kHz maximum switching speed 30ns typ pulse width distortion Wide VCC operating range: 10V to 20V 5000Vrms, 1 minute isolation Under voltage lockout protection (UVLO) with hysteresis Minimum creepage distance of 7.0mm Minimum clearance distance of 7.0mm C-UL, UL and VDE* approved RDS(ON) of 1.5 (typ.) offers lower power dissipation 15kV/s minimum common mode rejection The device is packaged in an 8-pin dual in-line housing compatible with 260C reflow processes for lead free solder compliance. Applications Plasma Display Panel High performance DC/DC convertor High performance switch mode power supply High performance uninterruptible power supply Isolated Power MOSFET gate drive *Requires `V' ordering option Functional Block Diagram Package Outlines FOD3180 NO CONNECTION 1 8 VCC 8 ANODE 2 7 OUTPUT CATHODE 3 6 OUTPUT NO CONNECTION 4 5 VEE 1 8 8 1 Note: A 0.1F bypass capacitor must be connected between pins 5 and 8. (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 1 www.fairchildsemi.com FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler August 2008 Symbol Parameter Value Units TSTG Storage Temperature -40 to +125 C TOPR Operating Temperature -40 to +100 C Junction Temperature -40 to +125 C TJ 260 for 10 sec. C IF(AVG) Average Input Current(1) 25 mA IF(tr, tf) LED Current Minimum Rate of Rise/Fall 250 ns IF(TRAN) Peak Transient Input Current (<1s pulse width, 300pps) 1.0 A TSOL VR Lead Solder Temperature Reverse Input Voltage 5 V IOH(PEAK) "High" Peak Output Current(2) 2.5 A IOL(PEAK) "Low" Peak Output Current(2) 2.5 A VCC - VEE Supply Voltage -0.5 to 25 V VO(PEAK) Output Voltage 0 to VCC V 250 mW 295 mW Dissipation(4) PO Output Power PD Total Power Dissipation(5) Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to absolute maximum ratings. Symbol Value Units Power Supply 10 to 20 V IF(ON) Input Current (ON) 10 to 16 mA VF(OFF) Input Voltage (OFF) -3.0 to 0.8 V VCC - VEE Parameter (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 2 FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Absolute Maximum Ratings (TA = 25C unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Over recommended operating conditions unless otherwise specified. Symbol Parameter IOH High Level Output Current(2)(3) IOL Current(2)(3) Low Level Output Output Voltage(6)(7) Test Conditions Min. VOH = (VCC - VEE - 1V) 0.5 VOH = (VCC - VEE - 3V) 2.0 VOL = (VCC - VEE - 1V) 0.5 VOL = (VCC - VEE - 3V) 2.0 Max. Unit A A VOH High Level VOL Low Level Output Voltage(6)(7) IO = 100mA ICCH High Level Supply Current Output Open, IF = 10 to 16mA ICCL Low Level Supply Current Output Open, VF = -3.0 to 0.8V IFLH Threshold Input Current Low to High IO = 0mA, VO > 5V VFHL Threshold Input Voltage High to Low IO = 0mA, VO < 5V 0.8 Input Forward Voltage IF = 10mA 1.2 VF / TA Temperature Coefficient of Forward Voltage IF = 10mA -1.5 mV/C VUVLO+ UVLO Threshold VO > 5V, IF = 10mA 8.3 V VO < 5V, IF = 10mA 7.7 V 0.6 V VF VUVLO- IO = -100mA Typ.* VCC - 0.5 UVLOHYST UVLO Hysteresis BVR Input Reverse Breakdown Voltage IR = 10A CIN Input Capacitance f = 1MHz, VF = 0V V VEE + 0.5 V 4.8 6.0 mA 5.0 6.0 mA 8.0 mA V 1.43 5 1.8 V V 60 pF *Typical values at TA = 25C (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 3 FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Electrical-Optical Characteristics (DC) Over recommended operating conditions unless otherwise specified. Symbol Parameter Test Conditions Min. tPLH Propagation Delay Time to High Output Level(8) tPHL Propagation Delay Time to Low Output Level(8) IF = 10mA, Rg = 10, f = 250kHz, Duty Cycle = 50%, Cg = 10nF PWD Pulse Width Distortion(9) Propagation Delay Difference Between Any PDD (tPHL - tPLH) Two Parts(10) tr Rise Time tf Fall Time tUVLO ON UVLO Turn On Delay tUVLO OFF UVLO Turn Off Delay Typ.* Max. Unit 50 135 200 ns 50 105 200 ns 65 ns 90 ns -90 CL = 10nF, Rg = 10 75 ns 55 ns 2.0 s 0.3 s | CMH | Output High Level Common Mode Transient Immunity(11) (12) TA = +25C, If = 10 to 16mA, VCM = 1.5kV, VCC = 20V 15 kV/s | CML | Output Low Level Common Mode Transient Immunity(11) (13) TA = +25C, Vf = 0V, VCM = 1.5kV, VCC = 20V 15 kV/s *Typical values at TA = 25C Isolation Characteristics Symbol Parameter Test Conditions VISO Withstand Isolation Voltage(14) (15) TA = 25C, R.H. < 50%, t = 1min., II-O 20A RI-O Resistance (input to output)(15) VI-O = 500V CI-O Capacitance (input to output) Freq. = 1MHz Min. Typ.* 5000 Max. Unit Vrms 1011 1 pF *Typical values at TA = 25C (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 4 FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Switching Characteristics 7. 8. Maximum pulse width = 1ms, maximum duty cycle = 20%. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input pulse to the 50% level of the rising edge of the VO signal. 9. PWD is defined as | tPHL - tPLH | for any given device. 10. The difference between tPHL and tPLH between any two FOD3180 parts under same test conditions. 11. Pin 1 and 4 need to be connected to LED common. 12. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse VCM to assure that the output will remain in the high state (i.e. VO > 10.0V). 13. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse, VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V). 14. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms, 60Hz for 1 second (leakage detection current limit II-O < 5A). 15. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted together. (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 5 FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Notes: 1. Derate linearly above +70C free air temperature at a rate of 0.3mA/C. 2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01F) + 0.5, frequency = 8kHz, 50% DF. 3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01F) + 8.5, frequency = 8kHz, 50% DF. 4. Derate linearly above +87C, free air temperature at the rate of 0.77mW/C. Refer to Figure 12. 5. No derating required across operating temperature range. 6. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VCC as IOH approaches zero amps. Fig. 2 Low To High Input Current Threshold vs. Ambient Temperature Fig. 1 Input Forward Current vs. Forward Voltage 6 IFLH - LOW TO HIGH INPUT CURRENT THRESHOLD (mA) I F - FORWARD CURRENT (mA) 100 10 TA = -40C TA = 100C 1 TA = 25C 0.1 0.01 V = 10 to 20V CC VEE = 0 Output = Open 5 4 3 2 1 0 0.001 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -40 2.2 -20 Fig. 3 Output Low Voltage vs. Ambient Temperature (VOH - VCC) - HIGH OUTPUT VOLTAGE DROP (V) V OL - OUTPUT LOW VOLTAGE (V) VF(OFF) = -3.0V to 0.8V IOUT = 100mA V = 10V to 20V CC VEE = 0 0.20 0.15 0.10 0.05 0.00 -40 -20 0 20 40 60 40 60 80 100 80 0.00 V CC = 10 to 20V, VEE = 0 IF = 10mA to 16mA IOUT = -100 mA -0.05 -0.10 -0.15 -0.20 -0.25 -0.30 100 -40 -20 TA - AMBIENT TEMPERATURE (C) 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Fig. 5 Supply Current vs. Ambient Temperature Fig. 6 Supply Current vs. Supply Voltage 6.2 6.2 V CC = 20V, VEE = 0 IF = 10mA (for ICCH) IF = 0mA (for ICCL) IF = 10mA (for ICCH) IF = 0mA (for ICCL) 5.8 I CC - SUPPLY CURRENT (mA) 5.8 I CC - SUPPLY CURRENT (mA) 20 Fig. 4 High Output Voltage Drop vs. Ambient Temperature 0.30 0.25 0 TA - AMBIENT TEMPERATURE (C) VF - FORWARD VOLTAGE (V) 5.4 ICCL 5.0 ICCH 4.6 4.2 3.8 TA = 25oC, VEE = 0V 5.4 5.0 ICCL ICCH 4.6 4.2 3.8 -40 -20 0 20 40 60 80 100 10 TA - AMBIENT TEMPERATURE (C) (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 12 14 16 18 20 VCC - SUPPLY VOLTAGE (V) www.fairchildsemi.com 6 FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Typical Performance Curves Fig. 8 Propagation Delay vs. Forward LED Current Fig. 7 Propagation Delay vs. Load Capacitance 200 200 VCC = 20V, VEE = 0 RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50% TA = 25oC VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50% t P - PROPAGATION DELAY (ns) t P - PROPAGATION DELAY (ns) 180 160 tPHL 140 120 tPLH 100 80 180 160 tPHL 140 120 tPLH 100 80 60 60 5 10 15 20 25 6 8 CG - LOAD CAPACITANCE (nF) 12 14 16 Fig. 10 Propagation Delay vs. Ambient Temperature Fig. 9 Propagation Delay vs. Series Load Resistance 200 200 VCC = 20V, VEE = 0 VCC = 20V, VEE = 0 IF = 10mA, TA = 25oC CG = 10nF f = 250 kHz, D. Cycle = 50% 180 t P - PROPAGATION DELAY (ns) t P - PROPAGATION DELAY (ns) 10 IF - FORWARD LED CURRENT (mA) 160 140 tPHL 120 tPLH 100 80 IF = 10mA RG = 10, CG = 10nF f = 250kHz, D. Cycle = 50% 180 160 140 tPHL 120 tPLH 100 80 60 60 10 20 30 40 50 -40 RG - SERIES LOAD RESISTANCE () -20 0 20 40 60 80 100 TA - AMBIENT TEMPERATURE (C) Fig. 11 Propagation Delay vs. Supply Voltage 180 t P - PROPAGATION DELAY (ns) IF = 10mA, TA = 25oC RG = 10, CG = 10nF f = 250 kHz, D. Cycle = 50% 160 140 tPHL 120 tPLH 100 80 60 10 15 20 25 VCC - SUPPLY VOLTAGE (V) (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 7 FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Typical Performance Curves (Continued) Option Order Entry Identifier (Example) No option FOD3180 S FOD3180S SD FOD3180SD T FOD3180T 0.4" Lead Spacing V FOD3180V VDE 0884 TV FOD3180TV VDE 0884, 0.4" Lead Spacing SV FOD3180SV VDE 0884, Surface Mount SDV FOD3180SDV Description Standard Through Hole Device Surface Mount, Lead Bend Surface Mount, Tape and Reel VDE 0884, Surface Mount, Tape and Reel Marking Information 1 3180 XX YY B V 3 2 6 5 4 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) 4 Two digit year code, e.g., `03' 5 Two digit work week ranging from `01' to `53' 6 Assembly package code (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 8 www.fairchildsemi.com FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Ordering Information D0 P0 t K0 P2 E F A0 W1 d t P User Direction of Feed Symbol W W B0 Description D1 Dimension in mm Tape Width 16.0 0.3 Tape Thickness 0.30 0.05 P0 Sprocket Hole Pitch 4.0 0.1 D0 Sprocket Hole Diameter 1.55 0.05 E Sprocket Hole Location 1.75 0.10 F Pocket Location 7.5 0.1 4.0 0.1 P2 P Pocket Pitch A0 Pocket Dimensions 12.0 0.1 10.30 0.20 B0 10.30 0.20 K0 4.90 0.20 W1 d R (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 Cover Tape Width 1.6 0.1 Cover Tape Thickness 0.1 max Max. Component Rotation or Tilt 10 Min. Bending Radius 30 9 www.fairchildsemi.com FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Carrier Tape Specifications 245 C, 10-30 s Temperature (C) 300 260 C peak 250 200 150 Time above 183C, <160 sec 100 50 Ramp up = 2-10C/sec 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Time (Minute) * Peak reflow temperature: 260 C (package surface temperature) * Time of temperature higher than 183 C for 160 seconds or less * One time soldering reflow is recommended Output Power Derating The maximum package power dissipation is 295mW. The package is limited to this level to ensure that under normal operating conditions and over extended temperature range that the semiconductor junction temperatures do not exceed 125C. The package power is composed of three elements; the LED, static operating power of the output IC, and the power dissipated in the output power MOSFET transistors. The power rating of the output IC is 250mW. This power is divided between the static power of the integrated circuit, which is the product of IDD times the power supply voltage (VDD - VEE). The maximum IC static output power is 150mW, (VDD - VEE) = 25V, IDD = 6mA. This maximum condition is valid over the operational temperature range of -40C to +100C. Under these maximum operating conditions, the output of the power MOSFET is allowed to dissipate 100mW of power. The output power is the product of the average output current squared times the output transistor's RDS(ON): PO(AVG) = IO(AVG)2 * RDS(ON) The IO(AVG) is the product of the duty factor times the peak current flowing in the output. The duty factor is the ratio of the `on' time of the output load current divided by the period of the operating frequency. An RDS(ON) of 2.0 results in an average output load current of 200mA. The load duty factor is a ratio of the average output time of the power MOSFET load circuit and period of the driving frequency. The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting output pulse width. Figure 13 shows an example of a 0.03F gate to source capacitance with a series resistance of 8.50. This reactive load results in a composite average pulse width of 1.5s. Under this load condition it is not necessary to derate the absolute maximum output current until the frequency of operation exceeds 63kHz. The absolute maximum output power dissipation versus ambient temperature is shown in Figure 12. The output driver is capable of supplying 100mW of output power over the temperature range from -40C to 87C. The output derates to 90mW at the absolute maximum operating temperature of 100C. Fig. 13 Output Current Derating vs. Frequency Fig. 12 Absolute Maximum Power Dissipation vs. Ambient Temperature 2.5 0.15 IO - PEAK OUTPUT CURRENT (A) POWER DISSIPATION (W) VDD - VEE = Max. = 25V IDD = 6mA LED Power = 45mW 0.1 0.05 2 1.5 TA = -40C to 100C Load = .03F +8.5 VDD = 20V IF = 12mA LED Duty Factor = 50% 1 Output Pulse Width = 1.5s 0.5 0 1 0 -40 -20 0 20 40 60 80 10 100 F - FREQUENCY (kHz) 100 TA - AMBIENT TEMPERATURE (C) (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 10 FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler Reflow Profile Figure 14 illustrates the relationship of the LED input drive current and the device's output voltage and sourcing and sinking currents. The 0.03F capacitor load represents the gate to source capacitance of a very large power MOSFET transistor. A single supply voltage of 20V is used in the evaluation. This device is tested and specified when driving a complex reactive load. The load consists of a capacitor in the series with a current limiting resistor. The capacitor represents the gate to source capacitance of a power MOSFET transistor. The test load is a 0.03F capacitor in series with an 8.5 resistor. The LED test frequency is 10.0kHz with a 50% duty cycle. The combined IOH and IOL output load current duty factor is 0.6% at the test frequency. Figure 15 shows the test schematic to evaluate the output voltage and sourcing and sinking capability of the device. The IOH and IOL are measured at the peak of their respective current pulses. IF = 8mA LED OFF ON 20V N-Channel (ON) P-Channel (ON) OUTPUT 0 IOH = 2.2A Load Current IOL = 2.2A 1s/Div Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive Pulse Generator FOD3180 8 1 0.1F 2 7 IOMON VO 0.33F IFMON 100 3 6 4 5 8.5 22F 100 Figure 15. Test Schematic (c)2005 Fairchild Semiconductor Corporation FOD3180 Rev. 1.0.6 www.fairchildsemi.com 11 FOD3180 -- 2A Output Current, High Speed MOSFET Gate Driver Optocoupler IOH and IOL Test Conditions ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com