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FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6
August 2008
FOD3180
2A Output Current, High Speed MOSFET Gate Driver
Optocoupler
Features
■
Guaranteed operating temperature range of -40°C to
+100°C
■
2A minimum peak output current
■
High speed response: 200ns max propagation delay
over temperature range
■
250kHz maximum switching speed
■
30ns typ pulse width distortion
■
Wide V
CC
operating range: 10V to 20V
■
5000Vrms, 1 minute isolation
■
Under voltage lockout protection (UVLO) with
hysteresis
■
Minimum creepage distance of 7.0mm
■
Minimum clearance distance of 7.0mm
■
C-UL, UL and VDE* approved
■
R
DS(ON)
of 1.5
Ω
(typ.) offers lower power dissipation
■
15kV/µs minimum common mode rejection
Applications
■
Plasma Display Panel
■
High performance DC/DC convertor
■
High performance switch mode power supply
■
High performance uninterruptible power supply
■
Isolated Power MOSFET gate drive
*Requires ‘V’ ordering option
Description
The FOD3180 is a 2A Output Current, High Speed
MOSFET Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETs used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
Functional Block Diagram Package Outlines
1
2
3
4
8
7
6
5
FOD3180
NO CONNECTION
ANODE
CATHODE
NO CONNECTION
VCC
OUTPUT
OUTPUT
VEE
8
8
1
8
1
1
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 2
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Parameter
Value Units
T
STG
Storage Temperature -40 to +125 °C
T
OPR
Operating Temperature -40 to +100 °C
T
J
Junction Temperature -40 to +125 °C
T
SOL
Lead Solder Temperature 260 for 10 sec. °C
I
F(AVG)
Average Input Current
(1)
25 mA
I
F(tr, tf)
LED Current Minimum Rate of Rise/Fall 250 ns
I
F(TRAN)
Peak Transient Input Current (<1µs pulse width, 300pps) 1.0 A
V
R
Reverse Input Voltage 5 V
I
OH(PEAK)
“High” Peak Output Current
(2)
2.5 A
I
OL(PEAK)
“Low” Peak Output Current
(2)
2.5 A
V
CC
– V
EE
Supply Voltage -0.5 to 25 V
V
O(PEAK)
Output Voltage 0 to V
CC
V
P
O
Output Power Dissipation
(4)
250 mW
P
D
Total Power Dissipation
(5)
295 mW
Symbol
Parameter
Value Units
V
CC
– V
EE
Power Supply 10 to 20 V
I
F(ON)
Input Current (ON) 10 to 16 mA
V
F(OFF)
Input Voltage (OFF) -3.0 to 0.8 V
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 3
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Over recommended operating conditions unless otherwise specified.
*Typical values at T
A
= 25°C
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
I
OH
High Level Output Current
(2)(3)
V
OH
= (V
CC
– V
EE
– 1V) 0.5 A
V
OH
= (V
CC
– V
EE
– 3V) 2.0
I
OL
Low Level Output Current
(2)(3)
V
OL
= (V
CC
– V
EE
– 1V) 0.5 A
V
OL
= (V
CC
– V
EE
– 3V) 2.0
V
OH
High Level Output Voltage
(6)(7)
I
O
= -100mA V
CC
– 0.5 V
V
OL
Low Level Output Voltage
(6)(7)
I
O
= 100mA V
EE
+ 0.5 V
I
CCH
High Level Supply Current Output Open,
I
F
= 10 to 16mA
4.8 6.0 mA
I
CCL
Low Level Supply Current Output Open,
V
F
= -3.0 to 0.8V
5.0 6.0 mA
I
FLH
Threshold Input Current Low to
High
I
O
= 0mA, V
O
> 5V 8.0 mA
V
FHL
Threshold Input Voltage High to Low I
O
= 0mA, V
O
< 5V 0.8 V
V
F
Input Forward Voltage I
F
= 10mA 1.2 1.43 1.8 V
∆
V
F
/T
A
Temperature Coefficient of Forward
Voltage
I
F
= 10mA -1.5 mV/°C
V
UVLO+
UVLO Threshold V
O
> 5V, I
F
= 10mA 8.3 V
V
UVLO–
V
O
< 5V, I
F
= 10mA 7.7 V
UVLO
HYST
UVLO Hysteresis 0.6 V
BV
R
Input Reverse Breakdown Voltage I
R
= 10µA 5 V
C
IN
Input Capacitance f = 1MHz, V
F
= 0V 60 pF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 4
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Switching Characteristics
Over recommended operating conditions unless otherwise specified.
*Typical values at T
A
= 25°C
Isolation Characteristics
*Typical values at T
A
= 25°C
Symbol
Parameter
Test Conditions Min. Typ.* Max. Unit
t
PLH
Propagation Delay Time to High Output Level
(8)
I
F
= 10mA,
R
g
= 10
Ω
,
f = 250kHz,
Duty Cycle = 50%,
C
g
= 10nF
50 135 200 ns
t
PHL
Propagation Delay Time to Low Output Level
(8)
50 105 200 ns
PWD Pulse Width Distortion(9) 65 ns
PDD
(tPHL – tPLH)
Propagation Delay Difference Between Any
Two Parts(10)
-90 90 ns
trRise Time CL = 10nF,
Rg = 10Ω75 ns
tfFall Time 55 ns
tUVLO ON UVLO Turn On Delay 2.0 µs
tUVLO OFF UVLO Turn Off Delay 0.3 µs
| CMH | Output High Level Common Mode Transient
Immunity(11) (12)
TA = +25°C,
If = 10 to 16mA,
VCM = 1.5kV,
VCC = 20V
15 kV/µs
| CML | Output Low Level Common Mode Transient
Immunity(11) (13)
TA = +25°C,
Vf = 0V,
VCM = 1.5kV,
VCC = 20V
15 kV/µs
Symbol Parameter Test Conditions Min. Typ.* Max. Unit
VISO Withstand Isolation Voltage(14) (15) TA = 25°C,
R.H. < 50%, t = 1min.,
II-O ≤ 20µA
5000 Vrms
RI-O Resistance (input to output)(15) VI-O = 500V 1011 Ω
CI-O Capacitance (input to output) Freq. = 1MHz 1 pF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 5
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Notes:
1. Derate linearly above +70°C free air temperature at a rate of 0.3mA/°C.
2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 0.5Ω,
frequency = 8kHz, 50% DF.
3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 8.5Ω,
frequency = 8kHz, 50% DF.
4. Derate linearly above +87°C, free air temperature at the rate of 0.77mW/°C. Refer to Figure 12.
5. No derating required across operating temperature range.
6. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VCC
as IOH approaches zero amps.
7. Maximum pulse width = 1ms, maximum duty cycle = 20%.
8. tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input
pulse to the 50% level of the rising edge of the VO signal.
9. PWD is defined as | tPHL – tPLH | for any given device.
10. The difference between tPHL and tPLH between any two FOD3180 parts under same test conditions.
11. Pin 1 and 4 need to be connected to LED common.
12. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse
VCM to assure that the output will remain in the high state (i.e. VO > 10.0V).
13. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse,
VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V).
14. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms,
60Hz for 1 second (leakage detection current limit II-O < 5µA).
15. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted
together.
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 6
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves
Fig. 1 Input Forward Current vs. Forward Voltage
V
F
– FORWARD VOLTAGE (V)
I
F
– FORWARD CURRENT (mA)
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
0.001
0.01
0.1
1
10
100
T
A
= 100°C
T
A
= 25°C
T
A
= -40°C
Fig. 2 Low To High Input Current Threshold
vs. Ambient Temperature
-40 -20 0 20 40 60 80 100
IFLH – LOW TO HIGH INPUT CURRENT
THRESHOLD (mA)
0
1
2
3
4
5
6
VCC = 10 to 20V
VEE = 0
Output = Open
Fig. 3 Output Low Voltage vs. Ambient Temperature
-40 -20 0 20 40 60 80 100
VOL – OUTPUT LOW VOLTAGE (V)
0.00
0.05
0.10
0.15
0.20
0.25
0.30
VF(OFF) = -3.0V to 0.8V
IOUT = 100mA
VCC = 10V to 20V
VEE = 0
Fig. 4 High Output Voltage Drop vs. Ambient Temperature
-40 -20 0 20 40 60 80 100
(VOH - VCC) – HIGH OUTPUT VOLTAGE DROP (V)
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
0.00
VCC = 10 to 20V, VEE = 0
IF = 10mA to 16mA
IOUT = -100 mA
Fig. 5 Supply Current vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (°C)
T
A
– AMBIENT TEMPERATURE (°C) T
A
– AMBIENT TEMPERATURE (°C)
T
A
– AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
3.8
4.2
4.6
5.0
5.4
5.8
6.2
V
CC
= 20V, V
EE
= 0
I
F
= 10mA (for I
CCH
)
I
F
= 0mA (for I
CCL
)
I
CCL
I
CCH
Fig. 6 Supply Current vs. Supply Voltage
V
CC
– SUPPLY VOLTAGE (V)
10 12 14 16 18 20
I
CC
– SUPPLY CURRENT (mA)
I
CC
– SUPPLY CURRENT (mA)
3.8
4.2
4.6
5.0
5.4
5.8
6.2
IF = 10mA (for ICCH)
IF = 0mA (for ICCL)
TA = 25
o
C, VEE = 0V
ICCL
ICCH
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 7
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves (Continued)
Fig. 7 Propagation Delay vs. Load Capacitance
C
G
– LOAD CAPACITANCE (nF)
510152025
t
P
– PROPAGATION DELAY (ns)
t
P
– PROPAGATION DELAY (ns)
t
P
– PROPAGATION DELAY (ns)
t
P
– PROPAGATION DELAY (ns)
60
80
100
120
140
160
180
200
VCC = 20V, VEE = 0
IF = 10mA, TA = 25
o
C
RG = 10Ω
f = 250 kHz, D. Cycle = 50%
tPHL
tPLH
Fig. 8 Propagation Delay vs. Forward LED Current
I
F
– FORWARD LED CURRENT (mA)
681012 14 16
t
P
– PROPAGATION DELAY (ns)
60
80
100
120
140
160
180
200
V
CC
= 20V, V
EE
= 0
R
G
= 10Ω, C
G
= 10nF
f = 250 kHz, D. Cycle = 50%
T
A
= 25
o
C
t
PHL
t
PLH
Fig. 9 Propagation Delay vs. Series Load Resistance
R
G
– SERIES LOAD RESISTANCE (Ω)
10 20 30 40 50
60
80
100
120
140
160
180
200
VCC = 20V, VEE = 0
IF = 10mA, TA = 25
o
C
CG = 10nF
f = 250 kHz, D. Cycle = 50%
tPHL
tPLH
Fig. 10 Propagation Delay vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
60
80
100
120
140
160
180
200
VCC = 20V, VEE = 0
IF = 10mA
RG = 10Ω, CG = 10nF
f = 250kHz, D. Cycle = 50%
tPHL
tPLH
Fig. 11 Propagation Delay vs. Supply Voltage
V
CC
– SUPPLY VOLTAGE (V)
10 15 20 25
60
80
100
120
140
160
180
IF = 10mA, TA = 25
o
C
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
tPHL
tPLH
, CG = 10nF
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 8
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Ordering Information
Marking Information
Option
Order Entry Identifier
(Example) Description
No option FOD3180 Standard Through Hole Device
S FOD3180S Surface Mount, Lead Bend
SD FOD3180SD Surface Mount, Tape and Reel
T FOD3180T 0.4" Lead Spacing
V FOD3180V VDE 0884
TV FOD3180TV VDE 0884, 0.4" Lead Spacing
SV FOD3180SV VDE 0884, Surface Mount
SDV FOD3180SDV VDE 0884, Surface Mount, Tape and Reel
1
2
6
43 5
Definitions
1Fairchild logo
2Device number
3 VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4Two digit year code, e.g., ‘03’
5Two digit work week ranging from ‘01’ to ‘53’
6 Assembly package code
3180
BYY
XXV
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 9
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Carrier Tape Specifications
Symbol Description Dimension in mm
WTape Width 16.0 ± 0.3
tTape Thickness 0.30 ± 0.05
P0Sprocket Hole Pitch 4.0 ± 0.1
D0Sprocket Hole Diameter 1.55 ± 0.05
E Sprocket Hole Location 1.75 ± 0.10
FPocket Location 7.5 ± 0.1
P24.0 ± 0.1
PPocket Pitch 12.0 ± 0.1
A0Pocket Dimensions 10.30 ±0.20
B010.30 ±0.20
K04.90 ±0.20
W1Cover Tape Width 1.6 ± 0.1
dCover Tape Thickness 0.1 max
Max. Component Rotation or Tilt 10°
R Min. Bending Radius 30
d
0
P
t2
D0
1
1
W
User Direction of Feed
0
K
B0
A0W
E
D
F
P
P
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 10
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Reflow Profile
Output Power Derating
The maximum package power dissipation is 295mW. The
package is limited to this level to ensure that under normal
operating conditions and over extended temperature
range that the semiconductor junction temperatures do
not exceed 125°C. The package power is composed of
three elements; the LED, static operating power of the
output IC, and the power dissipated in the output power
MOSFET transistors. The power rating of the output IC is
250mW. This power is divided between the static power of
the integrated circuit, which is the product of IDD times the
power supply voltage (VDD – VEE). The maximum IC
static output power is 150mW, (VDD – VEE) = 25V, IDD =
6mA. This maximum condition is valid over the opera-
tional temperature range of -40°C to +100°C. Under these
maximum operating conditions, the output of the power
MOSFET is allowed to dissipate 100mW of power.
The absolute maximum output power dissipation versus
ambient temperature is shown in Figure 12. The output
driver is capable of supplying 100mW of output power
over the temperature range from -40°C to 87°C. The out-
put derates to 90mW at the absolute maximum operating
temperature of 100°C.
The output power is the product of the average output
current squared times the output transistor’s RDS(ON):
PO(AVG) = IO(AVG)2 • RDS(ON)
The IO(AVG) is the product of the duty factor times the
peak current flowing in the output. The duty factor is
the ratio of the ‘on’ time of the output load current divided
by the period of the operating frequency. An RDS(ON) of
2.0Ω results in an average output load current of 200mA.
The load duty factor is a ratio of the average output time
of the power MOSFET load circuit and period of the driv-
ing frequency.
The maximum permissible, operating frequency is deter-
mined by the load supplied to the output at its resulting
output pulse width. Figure 13 shows an example of a
0.03µF gate to source capacitance with a series resis-
tance of 8.50Ω. This reactive load results in a composite
average pulse width of 1.5µs. Under this load condition it
is not necessary to derate the absolute maximum output
current until the frequency of operation exceeds 63kHz.
• Peak reflow temperature: 260 C (package surface temperature)
• Time of temperature higher than 183 C for 160 seconds or less
• One time soldering reflow is recommended
245 C, 10–30 s
Time (Minute)
0
300
250
200
150
100
50
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5
Temperature (°C)
Time above 183 C, <160 sec
Ramp up = 2–10 C/sec
260 C peak
Fig. 12 Absolute Maximum Power Dissipation
vs. Ambient Temperature
T
A
– AMBIENT TEMPERATURE (°C)
-40 -20 0 20 40 60 80 100
POWER DISSIPATION (W)
0.15
0.1
0.05
0
VDD – VEE = Max. = 25V
IDD = 6mA
LED Power = 45mW
F – FREQUENCY (kHz)
I
O
– PEAK OUTPUT CURRENT (A)
0
0.5
1
1.5
2
2.5
110100
Fig. 13 Output Current Derating vs. Frequency
TA = -40°C to 100°C
Load = .03µF +8.5Ω
VDD = 20V
IF = 12mA
LED Duty Factor = 50%
Output Pulse Width = 1.5µs
©2005 Fairchild Semiconductor Corporation www.fairchildsemi.com
FOD3180 Rev. 1.0.6 11
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
IOH and IOL Test Conditions
This device is tested and specified when driving a com-
plex reactive load. The load consists of a capacitor in the
series with a current limiting resistor. The capacitor rep-
resents the gate to source capacitance of a power
MOSFET transistor. The test load is a 0.03µF capacitor
in series with an 8.5Ω resistor. The LED test frequency is
10.0kHz with a 50% duty cycle. The combined IOH and
IOL output load current duty factor is 0.6% at the test
frequency.
Figure 14 illustrates the relationship of the LED input
drive current and the device’s output voltage and sourc-
ing and sinking currents. The 0.03µF capacitor load rep-
resents the gate to source capacitance of a very large
power MOSFET transistor. A single supply voltage of
20V is used in the evaluation.
Figure 15 shows the test schematic to evaluate the out-
put voltage and sourcing and sinking capability of the
device. The IOH and IOL are measured at the peak of
their respective current pulses.
Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive
Figure 15. Test Schematic
0
20V
IF = 8mA
P-Channel (ON)
IOH = 2.2A
IOL = 2.2A
N-Channel (ON)
ON OFF
LED
OUTPUT
Load
Current
1µs/Div
1
2
3
4
8
IFMON
IOMON
VO
100Ω100Ω
8.5Ω
0.1µF
22µF
0.33µF
Pulse
Generator
7
6
5
FOD3180
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
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