PHASE CONTROL SCRs 7.4 TO 25 AMPERES 241 104 230.1 107 230.2 GE TYPE c10 ci JEDEC 2NTTTOA 2N1770-78 2N1842-50 ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION Ir(R Max. RMS on-state current (A) 1 average on-state current TIAV) conduction (A) @ Tg (C) \ one TSM surge current (A) re Max. |?t for fusing for > 1.5 msec (A Vv on-state conduction, rated {Vv} R resistance, dc, JC ccm) Max. holding current @ Cc (mA) time @1 c @1 c Typical turn-on time (usec) . turned-on current di/dt (A/usec) T. Junction operating temperature range ("C) 40 to 110 BLOCKING Typical critical rate-of-rise of off-state dv/dt voltage. Exponential @ max. rated T, (V/usec) FIRING a , required gate current to trigger st @ -65C @ c @ 25C Max. required gate voltage to trigger (V} c @ 40C @ 25C Min. gate voltage to trigger (V)} @ 110C @ 125C @ 150C VOLTAGE TYPES Repetitive Peak Forward and Reverse Voltages 2N1770 25 cu 50 C116F1 C116A1 C116B1 C116C1 C11601 Cti6E1 C116M1 700 800 - 241 (C222 PACKAGE OUTLINE NO. 242,3, 4, & 6 (C220). *C123 isolated version of C122. 139C11 SERIES 2N1770-78, 2N2619 | 2NI77OA SERIES SEE PAGE 663 | The C11 Silicon Controlled Rectifier is a three junction semiconductor device for use in low power switching and control applications requiring blocking voltages up to 600 volts and RMS load currents up to 7.4 amperes. Broad Voltage Range (Up to 600V}) No Gate Bias Required * Long Electical Creepage Path * High Gate Sensitivity Over Three Years of Successful Field Experience MSU ATINE MARE a @ COPPER TERMINAL, O16 ~ y SEE NOTES 102. eee aw C- #4 | | THICK, TIN PLATED @ | amok te @BRASS WASHER,O35 THICK @ O ! a ake NICKEL PLATED } @ MICA WASHERS, TWO, 625 - {|} 4 | | OD. .204 1.0., 005 THICK | gy @ TEFLON WASHER,270 OD. | ier] H 204 |.D., 050 THICK . 10-32 STEELNUT =, ae * AVAILABLE UPON REQUEST . CADMIUM PLATED | 7 + LOCK WASHER, | NOTES : |. COMO NREADS FXTENO TO WITHIN 2-1/2 THREADS are , 080 R CADMIUM PLATED | 2. DIAMETER OF UNTHREADED PORTION BO MAX. . STEEL 3. ANGULAR ORIENTATION OF THESE TERMINALS [8 UNDEFINED. | 4 CASE IS ANODE CONNECTION. 5. ALL DIMENSIONS IN INCHES. Minimum Forward Breakover Repetitive Peak Reverse , Transient Peak Reverse Voltage (Vso0)t Voltage (PRV)T Voltage (Non-recurrent <5 Millisec.)+ Type Ty = 65C to +125C Ty = 65C to +125C Ty == 65C to +125C C11U (2N1770) 25 Volts* 25 Volts* 40 Volts* C11F (2N1771) 50 Volts* 50 Volts* 75 Volts* C11A (2N1772) 100 Volts* 100 Volts* 150 Volts* Cl1G (2N1773) 150 Volts* 150 Volts* 225 Volts* C11B (2N1774) 200 Volts* 200 Volts* 300 Volts* C11H (2N1775) 250 Volts* 250 Volts* 350 Volts* C11C (2N1776) 300 Volts* 300 Volts* 400 Volts* C11D (2N1777) 400 Volts* 400 Volts* 500 Volts* C11E (2N1778) 500 Volts* 500 Volts* 600 Volts* C11M (2N2619) 600 Volts* 600 Volts* 720 Volts* +Values apply for zero or negative gate voltage only. Maximum case to ambient thermal resistance for which maximum PRV ratings apply equals 18C /watt. MAXIMUM ALLOWABLE RATINGS Repetitive Peak Forward Blocking Voltage (PFV)___SSS(C1LU thru Cl11D) 480 _~* Volts (C11E andC11M) 720 ~~ Volts RMS Forward Current (All conduction angles) 7.4 Amperes Average Forward Current (1) ALT Amperes* at 60C Case (Half Wave Rectified) For other operating conditions see Chart 3. Peak One Cycle Non-recurrent Surge Current (isu) . Ce 60 Amperes* Peak Surge Current During Turn-on Time Interval ____ See Chart 7 It (for fusing) _ _. ___Caleulate from Chart 8 Peak Gate Power (p,q) 5 Watts* 7 Average Gate Power (P,;) ee . 0.5 Watt* Peak Gate Current (ig) ec 2.0 Amperes* Peak Gate Voltage (v,,) (Forward and Reverse) _..10 Volts* Operatirig Temperature eC BPS to +125C* Storage Temperature ee 65C to +150C* Stud Torque - _.15 inch-pounds *Indieates data included on JEDEC type number vegistration. **NOT TO EXCEED GATE POWER RATINGS 322CHARACTERISTICS C11 SERIES Test Symbol Min. Typ. Max. Units Test Conditions 2N1770-78 Peak Reverse and Forward iz and is 2N2619 Blocking Currentt T, = 125C, Gate Open C11U (2N1770) 4.5 9.0 ma Vac = Ve, = 25 Volts Peak C11F (2N1771) _ 4.5 9.0 ma 50 C11A (2N1772) a 4.5 9.0 ma 100 Cl1G (2N1773) 4.0 8.0 ma 150 C11B (2N1774) - 3.0 6.0 ma 200 C11H (2N1775) 2.5 5.0 ma 250 C1ic (2N1776) 1.5 4.0 ma 300 Cl1lD (2N1777) 1.0 2.0 ma 400 C1l1E (2N1778) 1.0 2.0 ma 500 C11M (2N2619) 1.0 2.0 ma 600 Full Cycle Avg. Reverse and Trav T. = 60C, I. = 4.7A, half sine wave Forward Blocking Current} and 180 Conduction Angle Iscavy C11U (2N1770) 2.3 4.5% mAdc | Vac = Vea = 25 Volts Peak C11F (2N1771) 2.3 4.5* mAdec 50 C11A (2N1772) - 2.3 4.5* mAdc 100 C11G (2N1773) 2.0 4.0* mAdec 150 C11B (2N1774) _ 1.5 3.0* mAdc 200 C11H (2N1775) 1.3 2.5% mAde 250 C11C (2N1776) . 0.8 2.0* mAdc 300 C11D (2N1777) 0.5 1.0* mAde 400 C11E (2N1778) _ 0.5 1.0* mAde 500 C11M (2N2619) 0.5 1.0* mAdc 600 Gate Current to Fire Ter _ 10 15 mAdc Vac = 12Vde, T) = 25C, Ri, = 250 ohms 20 30* mAde | Vy. = 12Vde, T: = 65C, Ri = 250 ohms 4 8 mAde | Vac = 12Vde, T, = 125C, Ri. = 250 ohms Gate Voltage to Fire Ver _- 1.8 2.0% Vde Vac = 12 Vde, T, = 65 to + 125C, Ri, = 250 ohms 0.3* 0.7 Vde vac = Rated, T; = 125C, Ri = 250 ohms Peak Forward Voltage Drop Ve 1.6 1.85 Vv T, = 25C, ir = 15 a (single sinusoidal pulse, 4 ms wide) Holding Current In _ 8.0 ae mAdc | Anode Supply = 6 Vde, Ti = 25C Turn-on Time ta + tr 1.0 usec T, = 25C, ir = 10a, vac Rated Gate Supply: 7 volt open circuit, 20 ohm, 0.1 psec max. rise time. Turn-off Time tore _ 15 usec Ts = 125C, ir = 5a,in= ba vac (Reapplied) = Rated. Rate of Rise of Reapplied Forward Blocking Voltage = 20 volts per microsecond maximum. Thermal Resistance Oy _ 1.5 3.1 C/Watt, Junction to Case. +Values apply for zero or negative gate voltage. Maximum case to ambient thermal resistance for which maximum PRV ratings apply = 18C per watt. *Indicates data included on JEDEC type number registration. (oo 80 60 40 wy 8 RES. a os AMPE! Bm oo TEMPERATURE * 125C nn INSTANTANEOUS FORWARD CURRENT-AM eo oof x B BO o8 os oa 02 TO BREAKOVER VOLTAGE WITH ZERO GATE SIGNAL os lo is INSTANTANEOUS FORWARD VOLTAGE OROP-VOLTS 1. MAXIMUM FORWARD CHARACTERISTICS CONDUCTING STATE or 20 25 30 323 INSTANTANEOUS FORWARD CURRENT-AMPERES JUNCTION TEMPERATURE = 200 +125C 100 90 80 70 60 50 40 30 20 0 2 4 6 8 10 12 14 INSTANTANEOUS FORWARD VOLTAGE DROP-VOLTS 2. MAXIMUM FORWARD CHARACTERISTICS HIGH CURRENT LEVEL CONDUCTING STATEC11 SERIES 2N1770-78 2N2619 AVERAGE FORWARD POWER DISSIPATION-WATTS > [oe] Nn o 180 4 160 / = / WJ s O 180 a CONDUCTION SS NGLE a. a F100 RS | a MOK SKSN a S __| CONDUCTION ANGLE Sod PD. PN a Ww 80 t 60 z | | | | gor TY ~ Z__| NOTE I-0-C,1d, 30,68 CIRCUITS: RESISTIVE | 120% NL D-C 5 60/-+_ OR INDUCTIVE LOAD 50 To 400 CPs t a | hot | 2 = 2 = x < = NOTE 2-RATINGS ARE DERIVED FOR 0.25 DISSIPATION. FOR HIGHER GATE DISSIPATION DECREASE STUD | | | | L.NOTE3-11/2"X 11/2" 1S MINIMUM FIN SIZE FOR WHICH RATINGS APPLY | | TEMPERATURE AT RATE OF 3.1C PER WATT | WATT leare AVERAGE POWER 180 i | 0 1 2 3 4 5 6 AVERAGE FORWARD CURRENT- AMPERES 3. MAXIMUM ALLOWABLE CASE TEMPERATURE 180 D.C. A A 120 fo Yo A ZA CONDUCTION - ANGLE = 30 180 le- CONDUCTION ANGLE wor aot LL oe L Ly |, Vf A) MEE lL Life | NOTE: JUNCT ION TEMPERATURE 125C 2 3 4 AVERAGE FORWARD CURRENT - AMPERES 4. FORWARD POWER D 324 ISSIPATIONINSTANTANEOUS GATE VOLTAGE - VOLTS AVERAGE FORWARD CURRENT- AMPERES NOTES: (I} SUGGESTED COOLING FIN BESIGNS. FINAL DESIGN SHOULD BE CHECKED TO ASSURE THAT CASE TEMPERATURE DOES NOT EXCEED VALUE SPECIFIED IN CURVE 3. (2) ALL FIN SIZES I/I6" THICK COPPERFINS PAINTED, STUD MOUNTED DIRECTLY TO FIN-MINIMUM FIN SPACING | INCH. {3) RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 CPS-FREE [Sw OTHER CONDUCTION ANGLES, MULTIPLY CURRENT scaLE CONVECTION COOLING. (4) CURVES SHOWN ARE FOR 180* CONDUCTION ANGLE. FOR BY THE FOLLOWING FACTORS, DC-140 SN 120- 0.85 4 NS 90-0,70 NOKIN so oss ; 4 ~~ Ne de: SIZE 6X.6 ERIN 2pm een NS OK PR | NA \ > = iN MN Qo lo 20 30 40 50 60 70 80 90 00 =i AMBIENT TEMPERATURE C 5. MAXIMUM FORWARD CURRENT VS. AMBIENT TEMPERATURE FOR VARIOUS FIN SIZES | I | | JUNCTION TEMPERATURE,- 65C TO +125C | | | | C11 SERIES 2N1770-78 2N2619 Ff | wo MAX ALLOWABLE PEAK VOLTAGE * to oy, \ MIN. GATE CURRENT REQUIRED L TO FIRE ALL UNITS. AT 4 SH25C, + 25C ~65 C WG ii = WN iia GATE VOLTAGE: REQ'D NN FIRE ALL. UNITS 7 v2 N GATE YZ Yi} oe W\WW\WW MAX GATE EQS ASSESS. VOLTAGE THAT ANY. UNITS (AT +125C=0.3V UY) SN WA \Z 77 \P, @ 0 10 20 30 40 INSTANTANEOUS GATE CURRENT~ MA \ 7 REPRESENTS LOCUS OF INSTANTANEOUS GATE VOLTAGE - VOLTS - a POSSIBLE FIRING POINTS FROM - 65C TO +125C. SEE SHADED AREA INSERT FOR: DETAIL. / Ny MAX ALLOWABLE INSTANTANEOUS f GATE: POWER=5.0 WATTS a Y S| Zo Z| = | | enema pn MAX ALLOWABLE PEAK "GATE CURRENT =2.0 A > 0.4 0.8 1.2 16 2.0 INSTANTANEOUS GATE CURRENT AMPERES 6. FIRING CHARACTERISTICS 325C11 SERIES 2N1770-78 2N2619 350 300 CURRENT - AMPERES 3 a 8 R 3S 3 5 3 MAXIMUM ALLOWABLE PEAK FORWARD a oO \ \ \ \ NOTES: (1) CURRENT RISE TIME (lIO% TO 90%) LIMITED TO 2.5 MICROSECONDS MINIMUM. (2) GATE DRIVE: 7.0 VOLTS (OPEN CIRCUIT) 20 OHM SOURCE. (3) JUNCTION TEMPERATURE BEFORE SWITCHING = 125C. (4) THIS CURVE MUST NOT BE USED FOR RECURRENT SWITCHING. SEE APPLICATION NOTES FOR FURTHER INFORMATION. \ \ = 100 200 300 400 500 PEAK FORWARD BLOCKING VOLTAGE PRIOR TO SWITCHING - VOLTS 7. PEAK NON-RECURRENT SURGE CURRENT DURING TURN-ON TIME INTERVAL 6 20C TO+I25 C eee ~ Po 50 2 oN = 65C TO -20C TToAN nt} Wt 40 uJ a = q | te 30 =a lJ am a 2 oO w 20 & NOTES: (1) FOR CALCULATING 12+ RATINGS 3 (2) JUNCTION TEMPERATURE Oo -~65C TQ +125C = 10 = a oO iL O Ke) 15 2 3 4 5 6783 PULSE TIME -MILLISECONDS 8. MAXIMUM ALLOWABLE NON-RECURRENT SUB-CYCLE SURGE CURRENT RATING 326 600PEAK HALF SINE WAVE FORWARD CURRENT-AMPERES 80 C11 SERIES 2N1770-78 2N2619 I | | | NOTES: (1) AT RATED LOAD CONDITIONS 10. MAXIMUM TRANSIENT THERMAL RESISTANCE 327 (2) JUNCTION TEMPERATURE PRIOR TO SURGE-65C TO+125C 60 40 20 0 | 2 3 4 5 6 7 8910 20 30 40 50 60 CYCLES AT 60 CPS 9. MAXIMUM ALLOWABLE NON-RECURRENT SURGE CURRENT.-RATING 4 eK g = JUNCTION TO CASE ~ 2" TT 3 8 a CT ku 1] NOTE: CURVE DEFINES TEMP RISE OF JUNCTION ABOVE $ 7 CASE FOR SINGLE LOAD PULSE OF DURATION t. PEAK 3 ALLOWABLE DISSIPATION IN RECTIFIER FOR TIME , IF a 2 S/ STARTING FROM CASE TEMP, EQUALS 125C (MAX 2 Ty) MINUS MAXIMUM CASE TEMP DIVIDED BY THE Z A TRANSIENT THERMAL IMPEDANCE: P i25c-Tc PEAK=s_+_ wt 4 l J 9J-C(t) roe FOR OPTIMUM RATINGS AND FURTHER INFORMATION, SEE PUBLICATION 200.9 5 A ENTITLED "POWER SEMICONDUCTOR RATINGS UNDER TRANSIENT AND Lt Pa INTERMITTENT LOADS. |, u poy } put 2 el ll Lili = ool oo2 005 ol 02 05 4 2 & ! 2 10 20 0 100 be TIME (1)- SECONDS