Ce a OL DE 3875081 G E SOLID STATE SwitchMaX Power Transistors 34?5041 OO17070 3 MJ16010, MJ16012 MJH16010,MJH16012 5-A SswitchMax \\ Power Transistors High-Voltage N-P-N Types for Off-Line Power Supplies and Other High-Voltage Switching Applications Features: Applications: m Fast switching speed m High-voitage ratings: w Off-line power supplies @ High-voitage inverters w Switching regulators o1 17070 60D TBS IS File Number 1839 TERMINAL DESIGNATIONS E ( FLANGE} Voey = 850 V w Low Vo,(sat) at 1, = 10A The RCA MJ16010, MJ16012, MJH16010, and MJH16012 SwitchMax II series of silicon n-p-n power transistors fea- ture high voltage capability, fast switching speeds, and low saturation voltages, together with high safe-operating-area (SOA) ratings. They are specially designed for off-line power supplies, converter circuits, and pulse-width-modulated regulators. These high-voltage, high-speed transistors are tested for parameters that are essential to the design of high-power switching circuits. Switching times, including MAXIMUM RATINGS, Absolute-Maximum Values: MJ!6010 MJi6012 92CS- 27516 JEDEC TO-204AA (200 mii diameter pin isolation) E COLLECTOR O MJH16010 FLANGE MJH16012 TOP VIEW 3 JEDEC TO-218AC 9205-40257 inductive turn-off time, and saturation voltages are specified i at 100C to provide information necessary for worst-case design. The MJ16010 and MJ16012 transistors are supplied in steel JEDEG TO-204AA hermetic packages. The MJH16010 and MJH16012 transistors are supplied in JEDEC TO-218AC plastic packages. miJ16010 MJH16010 MJ16012 MJH16012 CEV A eo 850 Vv Vogg cc cce eect e eee tenner een eer a eter agence renee 450 Vv Veno citceseeneneneeeeeseseeneceeeceseeseneeeeerees 6 _ Vv Ig (Sat) cece cece seeee ee ee ee ee eee ee reece nets ees 10 vs A VG vc cceaee nent eee ee eee en ee ee ne nenen ese ten eters: 15 A leg cee ee eee tees een en ease eeecee ease ecee ener es es 20 A lg ccc ec ence cence seee sn ee eens eeeenee ea ee ee ee erases 10 A long oes ecee ence ec eeeeeeneeee tence eee eceennens 15 A Py (Os ao ees 175 135 WwW @ Te = VOCS ree eer eee ee eee tenet tenner eres 100 53.8 Ww T, above 25C, derate linearly .....-+---eeeeereers 1 1.08 wre Tyg Ty ceeeceece eee eee eee eee eee eeeesseee ences esses -65 to 200 _____ -65 to 150 C TL At distance = 1/8" in. (3.17 mm) from seating plane for 10S Max .......-.- reer eee eens 235 ____ C i L . At distance > 1/16" in. (1.58 mm) from : seating plane for 10 Max. ....-...-eeee eee eee es 235 C : Rai cctvcceccec cree e ene ene eee ene ener nee ne tees ness 1 0.93 C/W |O1 De Q3a750a1 oo1zo7.1 t 3875081 GE SOLID STATE O1E 17071 MJ16010, MJH16010 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) po 7-33 7/5 SiwitchMax Power Transistors MJ16010, MJ16012, MJH16010, MJH16012 [ Characteristic | Symbol | Min Typ Max Unit | OFF CHARACTERISTICS (1) Collectar-Emitter Sustaining Voltage VCEO(sus} 450 _ Vde (ig = 100 mA, Ig = 0) Collector Cutoff Current Icev mAdc (Vcey = 850 Vde, Vee(oft} = 1.5 Ve) - - 0.25 (Vcev = 850 Vdc, Vge(ott) = 1-5 Vde, Te = 100C} _ _ 15 Collector Cutoff Current tcerR ad _ 2.5 mAdc (VcE = 850 Vdc, Rae = 50 0, Tc = 100C} Emitter Cutoff Current leEBO _- - 1.0 mAdc (Vep = 6.0 Vde, Ic = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased IS/b See Figure 1 Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 2 ON CHARACTERISTICS (1) Collector-Emitter Saturation Voltage VcE(sat) Vde (Ic = 5.0 Adc, Ig = 0.7 Adc) _ 0.5 2.5 (Ic = 10 Ade, Ip = 1.3 Adc) _ 1.0 3.0 (Ic = 10 Ade, Ig = 1.3 Ade, Tc = 100C) _ _ 3.0 Base-Emitter Saturation Voltage VBE(sat) Vde (I = 10 Ade, Ip = 1.3 Ade) 1.0 15 (I = 10 Adc, Ig = 1.3 Adc, Tc = 100C) _ _ 1.5 DC Current Gain hee 5.0 _ _ _ {Ic = 15 Adc, Vee = 5.0 Vde} DYNAMIC CHARACTERISTICS Output Capacitance Cob _ _ 400 pF (Vcp = 10 Vde, IE = 0, fret = 1 0 kHz) SWITCHING CHARACTERISTICS Resistive Load Delay Time tg _ 40 _ ns Ic =10A Rise Time We 1 eee ve (Igo = 2.6 Adc, ty = 100 = Storage Time 1 CC 1.3 Ade . Rp = 1.6 9) ts _ 1400 Fall Time Bie ee tf = 140 = Storage Time PW = 30 us, t 600 <2.09 =5. $s ~~ _ Fall Time Duty Cycle <2.0%) (VBE(off} 5.0 Vdc) i 100 Inductive Load Storage Time tsy _ 800 1800 ns Fall Time tic = 10 Ade, (Te = 100C) ti = 50 200 Crossover Time Ip1 = 13 Ade, te = 100 250 Storage Time VBE(off} = 5 0 Vde, tsy - 860 _- Fall Time VCE(pk) = 400 Vdc) (Te = 150C) tti - 40 - Crossover Time te _ 80 _ {1) Pulse Test Pulse Width = 300 us, Duty Cycle < 20% 75 aO1 DE 3875081 oo1zor2 T 3875081 GE SOLID STATE . - SwitchMax Power Transistors O1E 17072 BD T 33 1/3 MJ16010, MJ16012, MJH16010, MJH16012 MJ16012, MJH16012 ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) [ Characteristic | Symbol | Min | Typ Max | Unit OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage VcEO(sus)} 450 _ _ Vde {Ic = 100 mA, Ig = 0) Collector Cutoff Current Icev mAdc (Vogy = 850 Vde, Vge(oft) = 1-5 Vde) _ - 0.25 (Vcgy = 850 Vdc, Vge(oft)= 1.5 Vde, Tc = 100C) - - 1.5 Collector Cutoff Gurrent IcER - - 25 mAdc (Vcg = 850 Vde, Ree = 50 0, Tc = 100C) Emitter Cutoff Current leBo - - 1.0 mAdc (Vep = 6.0 Vde, Ic = 0) SECOND BREAKDOWN Second Breakdown Collector Current with Base Forward Biased IS/b See Figure 1 Clamped Inductive SOA with Base Reverse Biased RBSOA See Figure 2 ON CHARACTERISTICS (1) Collector-Emitter Saturation Voltage VCE(sat) Vde (Ic = 5.0 Adc, Ig = 0.5 Adc} 25 {I = 10 Ade, Ig = 1 0 Adc) 3.0 (Ic = 10 Ade, Ip = 1.0 Ade, Te = 100C) - 3.0 Base-Emitter Saturation Voltage VBE(sat} Vde {Ic = 10 Adc, Ig = 1.0 Adc) 1.5 (Ic = 10 Adc, Ig = 1.0 Ade, Tc = 100C) _ _ 1.5 DC Current Gain hee 7.0 - - (Ic = 15 Ade, Vcg = 5.0 Vdc} DYNAMIC CHARACTERISTICS Output Capacitance Cob _- _- 400 pF (Vcp = 10 Vde, le = 0. frest = 1-0 kHz) SWITCHING CHARACTERISTICS Resistive Load lay Ti t - 40 - ns Delay Time {Ig = 10 Ade. d Rise Time (Ip = 2.0 Adc, ty _ 100 _ 7 Vec = 250 Vde, Storage Time Re=1.69) ts 1400 = Ig1 = 1.0 Adc, Fall Time tf _ 140 _ Storage Time PW = 30 us. t 600 = Duty Cycle <2.0%) (Vv = 0 Vdc} $ Fall Time viy BE(oft} if = 100 = Inductive Load Storage Time tsv _ 800 1500 ns Fall Time (ic = 10 Adc, (Tc = 100C) Yi - 50 150 Crossover Time Ip1 = 1.0 Adc, te _ 400 200 Storage Time VBEloff) = 5-0 Vdc, Igy _ 860 _- Fall Time VcE(pk) = 400 Vde} {Tc = 180C) tt - 40 _ Crossover Time tc - 80 > {1) Pulse Test Pulse Width = 300 ys, Duty Cycle < 20% 7638750 POWER DERATING FACTOR {%) O1 DE 3875081 OO17073 4 i 81 GE SOLID STATE 016 17073 0 TSBSI3 SwitchMaX Power Transistors MJ16010, MJ16012, MJH16010, MJH16012 20 10 MJ16010/12 5.0 20 1.0 0.50 010 BONDING UMIT 0.05 THERMAL LIMIT . BREAKDOWN LIMIT Ic, COLLECTOR CURRENT (AMPS) 0.0? 50 10 20 (30 50 70 100 200 300 450 Veg. COLLECTOR-EMITTER VOLTAGE (VOLTS) Fig. 1 Maximum forward-bias safe-operating-areas for all types. 100 60 4 MJHI6010, MJH16012 MJ16010, MJ16012 20 0 40 80 120 160 200 Tc. CASE TEMPERATURE (C) Fig. 3 Dissipation and 1, , derating curves for all types. Bf 2 4.0 Tc < 100C Vee(att) = 9 10 te 50 Icipk}. PEAK COLLECTOR CURRENT (AMPS) 100 150 200 250 350 450 = 600 700 850 Vce(pk): PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS) Fig. 2 Maximum reverse-bias safe-operating-areas for all types. Voetpk) 90% Vee(pk} f]\ 90% Ieiak) th tt 10% Vce(pk} {e(pk) ~2 0% TIME Fig. 4 Inductive switching measurements display. 77