SKM 200GB123D . 5 16 7* Absolute Maximum Ratings Symbol Conditions IGBT *8 .9 5 16 7* &* .9 5 /62 7* 122 + . 5 ;6 7* /;2 + 022 + > 12 /2 B . 5 16 7* 122 + . 5 ;2 7* /02 + 022 + .9 5 /62 7* /DD2 + . 5 16 7* 1$2 + . 5 ;2 7* /;2 + D22 + /;22 + 622 + .9 ' D2 CCC E /62 /16 7* . ' D2CCCE /16 7* 1622 SEMITRANS(R) 3 &*<51%&* ** 5 $22 ? =8 @ 12 ? *8 A /122 .9 5 /16 7* Inverse Diode IGBT Modules &( .9 5 /62 7* &(< &(<51%&( SKM 200GB123D &( SKM 200GAL123D Freewheeling Diode SKM 200GAR123D &( .9 5 /62 7* &(< &(<51%&( Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . /0 12 Typical Applications* +* 34 5 /2 ? C &( 5 /2 ? C .9 5 /62 7* Module & < +* / C . 5 16 7* Characteristics Symbol Conditions IGBT =8 &*8 =8 5 *8 &* 5 $ + =8 5 2 *8 5 *8 *82 *8 =8 5 /6 *8 &* * * *8 5 16 =8 5 2 .9 5 16 7* =8 5 '; ' E12 <= .9 5 7* <= 5 6$ H ## <=## 5 6$ H 8 # 8## < 9' 1 GAL min. typ. max. Units D6 66 $6 2/ 20 + /D /$ .9 5 /16 7* /$ /; .9 5 167* F00 G00 H .9 5 /167* /2 /1$$ H 16 0 /2 /6 /0 1 ( ( 2; /1 ( 5 /62 + =8 5 /6 .9 5 7* J= # .9 5 16 7* C # 5 / !I * GB Units /122 =8 Values . 5 16 7* &*< # ** 5 $22 &*5 /62+ .9 5 /16 7* =8 5 '/6 /622 * 16 K 112 /22 1D $22 F2 D22 122 ;22 /22 /F &=-. L L 22G MNO GAR 13-01-2009 NOS (c) by SEMIKRON SKM 200GB123D Characteristics Symbol Conditions Inverse Diode ( 5 8* &( 5 /62 +? =8 5 2 min. .9 5 16 7* C .9 5 /16 7* (2 typ. max. Units 1 16 /; C .9 5 16 7* // /1 .9 5 /16 7* ( .9 5 16 7* $ ;F .9 5 /16 7* (R) SEMITRANS 3 IGBT Modules &<< J &( 5 /62 + N 5 /622 +NB 8 =8 5 '/6 ? 5 $22 < 9', H H .9 5 /16 7* G2 ; + B* $$ L 216 MNO 16 Freewheeling Diode ( 5 8* SKM 200GB123D &( 5 122 +? =8 5 2 .9 5 16 7* (2 SKM 200GAL123D 1 C .9 5 /16 7* /; C .9 5 16 7* // /1 D6 $6 .9 5 /16 7* SKM 200GAR123D ( .9 5 16 7* .9 5 /16 7* Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . /0 12 Typical Applications* +* 34 GB 2 GAL &<< J &( 5 122 + N 5 1222 +NB 8 =8 5 2 ? ** 5 $22 < 9'(, .9 5 /16 7* /12 // + B* L 2/; MNO Module *8 <**PE88P /6 C ' < ' Q $ $ D 12 ! .5 16 7* 206 H .5 /16 7* 26 H 220; MNO 0 6 16 6 016 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. GAR 13-01-2009 NOS (c) by SEMIKRON SKM 200GB123D Zth Symbol Zth(j-c)l < < < < (R) SEMITRANS 3 Conditions Values Units 5/ 51 50 5D 5/ 51 50 6G 10 $; /1 220 222;F 2221 QNO QNO QNO QNO 5D 22221 5/ 51 50 5D 5/ 51 50 /F2 $$ /1 1 220D; 222F1 22FF QNO QNO QNO QNO 5D 22221 Zth(j-c)D SKM 200GAL123D < < < < SKM 200GAR123D IGBT Modules SKM 200GB123D Features ! " # $ % & ' # ( ) # *+ & " ,*- , * - . /0 12 Typical Applications* +* 34 GB 3 GAL GAR 13-01-2009 NOS (c) by SEMIKRON SKM 200GB123D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 4 13-01-2009 NOS (c) by SEMIKRON SKM 200GB123D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Transient thermal impedance Fig. 10 CAL diode forward characteristic Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode peak reverse recovery charge 5 13-01-2009 NOS (c) by SEMIKRON SKM 200GB123D UL Recognized File 63 532 * , 6$ * , 6$ 6 =- * , 6F 6$ 13-01-2009 NOS =+ * , 6; 6$ =+< (c) by SEMIKRON