NYC222STT1G, NYC226STT1G, NYC228STT1G Sensitive Gate Silicon Controlled Rectifiers http://onsemi.com Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 400 thru 600 VOLTS Designed and tested for repetitive peak operation required for CD ignition, fuel ignitors, flash circuits, motor controls and low-power switching applications. Features * * * * * Blocking Voltage to 600 V High Surge Current - 15 A Very Low Forward "On" Voltage at High Current Low-Cost Surface Mount SOT-223 Package These are Pb-Free Devices G A K MARKING DIAGRAM MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Peak Repetitive Off-State Voltage (Note 1) (RGK = IK, TJ = *40 to +110C, Sine Wave, 50 to 60 Hz, Gate Open) NYC222 NYC226 NYC228 VDRM, VRRM On-State Current RMS (180 Conduction Angles, TC = 80C) IT(RMS) 1.5 A ITSM 15 A I2t 0.9 A2s PGM 0.5 W Peak Non-repetitive Surge Current, @TA = 25C, (1/2 Cycle, Sine Wave, 60 Hz) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width 1.0 msec, TA = 25C) Forward Average Gate Power (t = 8.3 msec, TA = 25C) Value V 50 400 600 0.1 W Forward Peak Gate Current (Pulse Width 1.0 ms, TA = 25C) IFGM 0.2 A Reverse Peak Gate Voltage (Pulse Width 1.0 ms, TA = 25C) VRGM 5.0 V Operating Junction Temperature Range @ Rated VRRM and VDRM TJ -40 to +110 C Storage Temperature Range Tstg -40 to +150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. July, 2008 - Rev. 0 AYW XXXXXG G 1 PG(AV) (c) Semiconductor Components Industries, LLC, 2008 SOT-223 CASE 318E STYLE 11 Unit 1 A = Assembly Location Y = Year W = Work Week XXXXX = Device Code G = Pb-Free Package (Note: Microdot may be in either location) PIN ASSIGNMENT 1 K (Cathode) 2 A (Anode) 3 G (Gate) 4 A (Anode) ORDERING INFORMATION Shipping Device Package NYC222STT1G SOT-223 (Pb-Free) 1000 /Tape & Reel NYC226STT1G SOT-223 (Pb-Free) 1000 /Tape & Reel NYC228STT1G SOT-223 (Pb-Free) 1000 /Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NYC222/D NYC222STT1G, NYC226STT1G, NYC228STT1G THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Ambient PCB Mounted Characteristic RqJA 156 C/W Thermal Resistance, Junction-to-Tab Measured on MT2 Tab Adjacent to Epoxy RqJT 25 C/W TL 260 C Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit - - - - 10 200 mA mA VTM - 1.2 1.7 V OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM/VRRM; RGK = 1000 W) TC = 25C TC = 110C IDRM, IRRM ON CHARACTERISTICS Peak Forward On-State Voltage (Note 2) (ITM = 2.2 A Peak) Gate Trigger Current (dc) (Note 3) (VAK = 7 Vdc, RL = 100 W) TC = 25C TC = -40C IGT - - 30 - 200 500 mA Gate Trigger Voltage (dc) (Note 3) (VAK = 7 Vdc, RL = 100 W) TC = 25C TC = -40C VGT - - - - 0.8 1.2 V Gate Non-Trigger Voltage (VAK = VDRM, RL = 100 W) TC = 110C VGD 0.1 - - V Holding Current (VAK = 12 V, RGK = 1000 W) Initiating Current = 200 mA TC = 25C TC = -40C - - 2.0 - 5.0 10 - 25 - IH mA DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off-State Voltage (TC = 110C) dv/dt V/ms 2. Pulse Width = 1.0 ms, Duty Cycle v 1%. 3. RGK Current not included in measurement. Voltage Current Characteristic of SCR + Current Symbol Parameter Anode + VTM VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current on state IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode - http://onsemi.com 2 IH + Voltage IDRM at VDRM Forward Blocking Region (off state) NYC222STT1G, NYC226STT1G, NYC228STT1G TA , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) CURRENT DERATING 140 100 a = 180 a = CONDUCTION ANGLE 60 dc 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 IT(AV), AVERAGE ONSTATE CURRENT (AMPS) 120 100 80 60 dc 40 a = 180 a = CONDUCTION ANGLE 20 0 0 0.2 0.4 3.0 TJ = 110C 25C 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0 0.5 0.8 Figure 2. Maximum Ambient Temperature 5.0 2.0 0.6 IT(AV), AVERAGE ONSTATE CURRENT (AMP) Figure 1. Maximum Case Temperature I T, INSTANTANEOUS ONSTATE CURRENT (AMP) 0 140 1.0 1.5 2.0 VT, INSTANTANEOUS ONSTATE VOLTAGE (VOLTS) Figure 3. Typical Forward Voltage http://onsemi.com 3 2.5 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) NYC222STT1G, NYC226STT1G, NYC228STT1G 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 2000 5000 1000 t, TIME (ms) Figure 4. Thermal Response TYPICAL CHARACTERISTICS 100 I GT GATE TRIGGER CURRENT ( A) VAK = 7.0 V RL = 100 0.7 0.6 0.5 0.4 0.3 -75 -50 -25 0 25 50 75 100 110 50 30 20 10 5.0 3.0 2.0 1.0 -40 -20 0 20 60 80 100 110 TJ JUNCTION TEMPERATURE (C) Figure 5. Typical Gate Trigger Voltage Figure 6. Typical Gate Trigger Current 2.0 10 1.8 I H , HOLDING CURRENT (mA) 40 TJ, JUNCTION TEMPERATURE (C) P(AV) MAXIMUM AVERAGE POWER DISSIPATION (WATTS) VGT, GATE TRIGGER VOLTAGE (VOLTS) 0.8 1.6 VAK = 12 V RL = 100 W 30 1.4 5.0 60 90 180 120 1.2 1.0 dc 0.8 0.6 2.0 0.4 0.2 1.0 -40 -20 0 20 40 60 80 100 110 0 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ, JUNCTION TEMPERATURE (C) IT(AV), AVERAGE ONSTATE CURRENT (AMPS) Figure 7. Typical Holding Current Figure 8. Power Dissipation http://onsemi.com 4 1.4 1.6 NYC222STT1G, NYC226STT1G, NYC228STT1G PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE M D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 HE E 1 2 3 b e1 e 0.08 (0003) C q A A1 L1 DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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