TLP292-4(E(T - TOSHIBA - Datasheet.Directory

TLP292-4

1 2019-05-20

Toshiba Electronic Devices & Storage Corporation

T OS HI BA PHOT O COU PL ER IRED & PHOT O -TRANSISTOR

TLP292-4

Programmable Controllers

Switching Power Supplies

Simplex/Multiplex Data Transmissions

TLP292-4 cons ists of ph ototra nsistors optically coupled to two infr ared em itting

diodes connected inverse parallel, and can oper ate directly by AC input current.

TLP292-4 is housed in the very small and thin SO16 package.

Since TLP292-4 is guaranteed wide operating temperature (Ta=-55 to 125 ˚C)

and high isolation voltage (3750 Vrms), it is suitable for high-density surface

mount appli cations such as programmable cont r oll ers.

 Collector-Emitter Voltage : 80 V (min)

 Current Transfer Ratio : 50% (min)

Rank GB: 100 %(min)

 Isolation Voltage : 3750 Vrms (min)

 Operation temperature range: -55 to 125 ˚C

 Safety standards

UL-recognized: UL 1577, File No.E6734 9

cUL-recognized: CSA Component Acceptance Service No.5A

File No.E67349

CQC- approved : GB4943.1, GB8898 Thailand Factory

仅适用干海拔 2000 m 以下地区安全使用

VDE- approved: EN 60747-5-5, EN 62368-1 (Note1)

Note1 : When a VDE approved type is needed,

please designate the Option (V4).

Construction Mechanical Rating

TOSHIBA

11-11F1

Weight: 0.19 g (typ.)

Creepage Distanc e

Clearance

Internal isol ation t hickness

5.0 mm (min)

0.4 mm (min)

1,3,5,7 : Cathode, An ode

2,4,6,8 : Anode, Cathode

9,11,13,15 : Emitter

10,12,14,16 : Collector

TLP292-4

Pin Configuration

Unit: mm

8

9

1

2

3

4

5

6

7

10

11

12

13

14

15

16

Start of commercial production

2014-04

TLP292-4

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Toshiba Electronic Devices & Storage Corporation

Current Transfer Ratio (Unless otherwise specified, Ta=25°C)

Note 1: Specify both the part number and a rank in this format when ordering.

Example: rank GB: TLP292-4(GB,E

For safety standard certification, however, specify the part number alone.

TLP292−4 (GB,E: TLP292-4

Note2: The LA and LGB rank are made CTR rank of the low input current condition.

Rank

(Note1) Test conditi on

Current Transf er Ratio

(%)

Marking of Classif ication

IC / IF

Min Max

Blank IF =±5 mA, VCE = 5 V 50 600 Brank

GB 100 600 GB

LA (Note2) IF =±0.5 mA, VCE = 5 V 50 600 LA

LGB (Note2) 100 600 LB

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Toshiba Electronic Devices & Storage Corporation

Absolute Maximum Ratings (Note)(Unless otherwise specified, Ta = 25°C)

Characteristics Symbol Note Rating Unit

LED

R.M.S. forward current IF(RMS) ±50 mA

Input forward current derating (Ta≥50°C) ∆IF /ΔTa −0.59 mA /°C

Input forward current(Pulsed) IFP (Note1) ±1 A

LED power disipation PD 70 mW

LED power dissi pation derat i ng(Ta≥50°C) ∆PD /ΔTa -0.82 mW /°C

Junction temperature Tj 125 °C

DETECTOR

Collector-emitter voltage VCEO 80 V

Emitter-collector voltage VECO 7 V

Collector current IC 50 mA

Collector power dissipation (1 Circuit ) PC 100 mW

Collect or power dissipation

derating(Ta

≥

25°C)

(1 Circuit) ∆PC /ΔTa -0.91 mW /°C

Junction temperature Tj 125 °C

COMMON

Operating tem perature range Topr −55 to 125 °C

Storage temperature range Tstg −55 to 125 °C

Lead soldering temperature Tsol 260 (10 s) °C

Total power dissipation

(1 Circuit) PT 170 mW

Input power dissipation derating (Ta≥25°

C)

(1 Circuit)

∆PT /ΔTa −1.55 mW /°C

Isolation Voltage AC, 60 s, R.H.≤60 % BVS (Note2) 3750 Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semic onductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. re lia bil ity test

report and estimated failure rate, etc).

Note1: Pulse width ≤ 100 μs, frequency 100 Hz

Note2: This device is considered as a two-terminal device: All pins on the LED side are shorted together,

and all pin on the photodetector side are shorted together.

Electrical Characteristics (Unless other wise specified, Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

LED

Input forward voltage VF IF = ±10 mA 1.1 1.25 1.4 V

Input capacitance CT V = 0 V, f = 1 MHz — 60 — pF

DETECTOR

Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 — — V

Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 — — V

Dark current IDARK VCE = 48 V, — 0.01 0.08 μA

VCE = 48 V, Ta = 85 °C — 2 50 μA

Collector-emitter capacitance CCE V = 0 V, f = 1 MHz — 10 — pF

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Coupled Electrical Characteristics (Unless otherwise specified, Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Current transf er ratio IC / IF IF = ±5 mA, VCE = 5 V 50 — 600 %

Rank GB

100 — 600

Saturated current transfer ratio IC / IF (sat) IF = ±1 mA, VCE = 0.4 V — 60 — %

Rank GB

30 — —

Collector-emitter saturation voltage VCE (sat)

IC = 2.4 mA, IF = ±8 mA — —

0.3

V

IC = 0.2 mA, IF = ±1 mA —

0.2 —

Rank GB

—

— 0.3

Off-state collector current IC (off) VF = ±0.7 V, VCE = 48 V — — 10 μA

Collector current ratio IC (ratio) IC (IF = −5 mA) / IC (IF = 5 mA)

(Figure 1)

0.33 — 3 —

Figure 1: Collector current ratio test circuit

)V5

CE

V,

1F

I

F

I(

1C

I)V5

CE

V,

2F

I

F

I(

2C

I

)ratio(C

I==

==

=

Isolation Characteristics (Unless otherwise specified, Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Total capacitance (input to output) CS VS = 0 V, f = 1 MHz — 0.8 — pF

Isolation resistance RS VS = 500 V, R.H.≤60 % 1×10

12

10

14

—

Ω

Isolation voltage BVS AC , 60 s 3750 — — Vrms

Switching Characteristics (Unless otherwise specified, Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Rise time tr

VCC = 10 V, IC = 2 mA

RL = 100 Ω

— 2 —

μs

Fall time tf —

3 —

Turn-on time ton —

3 —

Turn-off time toff — 3 —

Turn-on time ton RL = 1.9 kΩ (Figure 2)

VCC = 5 V, IF = 16 mA

—

1.5 —

μs Storage time ts —

20 —

Turn-off time toff —

35 —

Figure 2: Switchin Time Test Circuit

V

CE

V

CC

R

L

I

F

I

F

V

CE

VCC

0.5 V

4.5 V

t

off

ton

t

S

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Toshiba Electronic Devices & Storage Corporation

Characteristics Curves (Note)

IF-Ta PC-Ta

Input forward current

IF (mA)

Collect or power dissipat i on

PC (mW)

Ambient temperature Ta (˚C) Ambient temperature Ta (˚C)

IFP- D R IF- V F

Input forward current

(pulsed)

IFP (mA)

Input forward current I

F (mA)

Duty c ycl e r atio DR Input forward voltage VF (V)

∆VF/∆Ta- I F IF P – V F P

Input forward current temperature coefficient

ΔVF /ΔTa (mV/°C)

Input forward current (puls ed) I

FP (mA)

Input forward current IF (mA) Input forward voltage (pulsed) VFP (V)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherw ise not ed.

Pules width ≤100 μs

Ta=25˚C

10-3

10-2

10-1

100

Pulse width ≤10 μs

Repetitive frequency=100 Hz

Ta=25°C

This curve shows the

maximum limit to

the input

forward current.

This curv e s ho ws the ma xim um

limit to the

collector power

dissipation.

This curve shows the

maximum limit to the input

forward current (pulsed).

125˚C

110˚C

85˚C

50˚C

25˚C

0˚C

-25˚C

-55˚C

TLP292-4

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Toshiba Electronic Devices & Storage Corporation

IC- V CE IC- V CE

Collector current IC (mA)

Collector current

IC (mA)

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

IC- I F

I

C

/I

F

- I

F

Collector current I

C (mA)

Current transf er ratio

IC / IF (%)

Input forward voltage IF (mA) Input forward current IF (mA)

IDARK-Ta

VCE(sat) - Ta

Dark current IDARK (μA)

Collector-

emitter saturation voltage

VCE(sat) (V)

Ambient temperature Ta (°C) Ambient temperature Ta (°C)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherw ise not ed.

VCE=10 V

VCE=5 V

VCE=0.4 V

VCE=10 V

VCE=5 V

VCE=0.4 V

IF=8 mA, IC=2.4 mA

IF=1 mA, IC=0.2 mA

Ta=25˚C

5 mA

10 mA

20 mA

30 mA

50 mA

P

C

(max)

5 mA

10 mA

I

F

= 2 mA

20 mA

30 mA

50 mA

Ta=25˚C

VCE=48 V

VCE=24 V

VCE=10 V

V

CE

=5 V

I

F

= 2 mA

Ta=25˚C

TLP292-4

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Toshiba Electronic Devices & Storage Corporation

I

C

- Ta

Switching time - R

L

Collector current

IC (mA)

Switching time (μs)

Ambient temperature Ta (°C)

Load resistanc e RL (kΩ)

Switching time - R

L

Switching time - Ta

Switching time (μs)

Load resistanc e RL (kΩ)

Ambient temperature Ta (°C)

Note: The above characteristics curves are presented for reference only and not guaranteed by production test,

unless otherw ise not ed.

t

off

Ta=25˚C

IF=16 mA

VCC=5 V

IF=16 mA

VCC=5 V

RL=1.9 kΩ

ts

ton

t

off

ts

ton

VCE=5V

IF=0.5 mA

5 mA

1 mA

3 mA

10 mA

25 mA

Ta=25˚C

IF=1.6 mA

VCC=5 V

t

off

ts

ton

TLP292-4

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Toshiba Electronic Devices & Storage Corporation

Solder ing and St orage

1. Precautions for Soldering

The soldering temperature should be controlled as closely as possible to the conditions shown

below, irrespectiveof whether a soldering iron or a reflow soldering method is used.

1) When Using Soldering Reflow

An example of a temperature profile when lead(Pb)-free solder is used

∙

 ∙ The soldering temperature profile is ba sed on the package surfa ce t emperature

(See the figur e shown below, which is based on the package surface temperature.)

 Reflow sol der ing must be performed once or tw ice.

 The mounti ng should be completed with the int er val from the first t o the last mountings being 2

weeks.

2) When using soldering Flow

 Preheat the device at a temperat ur e of 150 °C (pac kage surface temperat ur e) for 60 to 120

seconds.

 Mounti ng condition of 260 °C within 10 seconds is recom me nded

 Flow soldering must be pe r formed once.

3) When using soldering Iron

 Complete soldering within 10 seconds for lead temperatur e not exceeding 260 °C or within 3

seconds not exceeding 350 °C

 Heating by soldering iron mu st be done only once per lead.

2. Precautions for General Storage

1) Avoid storage locations where devices may be exposed to moisture or direct sunlight.

2) Follow the precautions printed on the packing label of the device for transportation and storage.

3) Keep the storage location temperature and humidity within a range of 5°C to 35°C and 45% to 75%,

respectively.

4) Do not store the products in locations with poisonous gases (especially corrosive gases) or in dusty

conditions.

5) Store the products in locations with minimal temperature fluctuations. Rapid temperature changes during

storage can cause condensation, resulting in lead oxidation or corrosion, which will deteriorate the

solderability of the leads.

6) When restoring devices after removal from their packing, use anti-static containers.

7) Do not allow loads to be applied directly to devices while they are in storage.

8) If devices have been stored for more than two years under normal storage conditions, it is recommended

that you check the leads for ease of soldering prior to use.

TLP292-4

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Toshiba Electronic Devices & Storage Corporation

Option: Specification for Embossed-Tape Packing

(TP) for M ini-Flat Coupler

1. Applicabl e Package

Package Name Product T ype

SO16 Mini-Flat Coupler

2. Product Naming System

Type of package used for shipment is denoted by a symbol suffix after a product number. The method of

classification is as below.

Example) TLP292-4(GB-TP,E

Part number: TLP292-4

CTR rank: GB

Tape type: TP

[[G]]/RoHS COMPATIBLE: E (Note)

Note : Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council o f 8 Jun 2011 on the

restriction of the use of certain hazardous substances in electrical and electronics equipment.

3. Tape Dimensions Specification

3.1 Orientation of Device in Relation to Direction of Tape Movement

Device orientation in the recesses is as shown in Figure 3.1.1.

Figure3.1.1 Device Orientation

3.2 Packing Quantity

2000 pcs per reel

3.3 Empty Device Recesses are as Shown in Table 1.

Table1 Empty Device Recesses

Standard Remarks

Occurrenc es of 2 or m ore

successive empty device

recesses 0 device Within any given 40-

mm section of

tape, not including l eader and trailer

Single empty devic e

recesses 6 device (m ax) per reel Not incl udi ng l eader and trailer

3.4 Tape Leader and Trailer

The start end of the tape has 50 or more empty cavities. The hub end of the tape has 50 or more empty

cavities and two empty turns only for a cover tape.

Direction of Tape feed

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Toshiba Electronic Devices & Storage Corporation

3.5 Tape Dimensions

Tape material: Synthetic Resin (protection against electrostatics)

Figure3.5.1 Tape Forms

Unit: mm

Table 3.5.1 Tape Dimensions

Unit: mm

unless otherwise specified: ±0.1

Symbol Dimension Remark

A 7.5 ―

B 10.5 ―

D 7.5 Center line of indented square hole and sprocket hole

E 1.75 Distance between tape edge and hole center

F 12.0 Cumulative error +0.1/-0.3 (max) per 10 feed holes

G 4.0 Cumul ative error +0.1/-0.3 (max) per 10 feed holes

K0 2.2 Internal space

0.3 ± 0.05

2.6 ± 0.2

K0

F

φ

1.5 ±

0.1

E

D

B

16.0 ± 0.3

φ

1.5

+0.1

−0

A

G

2.0 ± 0.1

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Toshiba Electronic Devices & Storage Corporation

3.6 Reel specification

Material: Synthetic Resin

Figure 3.6.1 Reel Dimensions

4. Packing

Packed in a shipping carton.

5. Label Format

The label on each carton provides the part number, quantity, lot number, the Toshiba logo, CTR rank, etc.

6. Ordering Information

When placing an order, please specify the part number, CTR rank, tape type and quantity (must be a

multiple of 2000) as shown in the following example.

Example) TLP292-4(GB-TP,E 2000 Pcs

Part number: TLP292-4

CTR rank (GB

Tape type: TP

[[G]]/RoHS COMPATIBLE: E (Note)

Quantity (must be a mul tiple of 2000): 2000 Pcs

Note : Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS

compatibility of Product.

The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council o f 8 Jun 2011 on the

restriction of the use of certain hazardous substances i n electrical and electronics equipment.

Symbol Dimension

A φ330 ± 2

B φ80 ± 1

C φ13 ± 0.5

E 2.0 ± 0.5

U 4.0 ± 0.5

W1 17.5 ± 0.5

W2 21.5 ± 1.0

E

W1

W2

A

B

C

U

Table 3.6.1 Reel Dimensions

Unit: mm

TLP292-4

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Toshiba Electronic Devices & Storage Corporation

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responsibl e for complyi ng with safety standards and for providing adequate designs and safeguards for their hardware, s oftware and

systems which minimi ze risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily

injury or damage to property, including data loss or corrupti on. Before c ust om ers use the Product, create designs including the

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all relevant TOSHIBA i nformation, including without limit ation, this document, the specificati ons, the data sheets and application notes

for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliabilit y Handbook" and (b) the

instruct i ons for the applicati on with which the Product will be used with or for. Cust omers are sol ely responsibl e for all aspects of their

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• Please contact your TOSHIBA s ales representative for details as to environmental matters such as the RoHS compatibility of

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