VBO 125 IdAVM = 124 A VRRM = 800-1600 V Single Phase Rectifier Bridge VRSM VRRM V V 900 1300 1700 800 1200 1600 ~ ~ VBO 125-08NO7 VBO 125-12NO7 VBO 125-16NO7 Symbol Conditions IdAVM TC = 85C, module IFSM TVJ = 45C; VR = 0 I2t + Type - Maximum Ratings 124 A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1800 1950 A A TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 1600 1800 A A TVJ = 45C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 16200 16000 A2s A2s TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 12800 13600 A2s A2s -40...+150 150 -40...+150 C C C 2500 3000 V~ V~ 15% 15% 15% 15% Nm lb.in. Nm lb.in. 225 g TVJ TVJM Tstg VISOL 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Md Mounting torque (M5) 5 44 5 44 Terminal connection torque (M5) Weight typ. Symbol Conditions IR VR = VRRM; VR = VRRM; TVJ = 25C TVJ = TVJM 0.3 8.0 mA mA VF IF = 150 A; TVJ = 25C 1.3 V VT0 rT For power-loss calculations only TVJ = TVJM 0.8 3 V m RthJC per per per per 0.83 0.138 1.13 0.188 K/W K/W K/W K/W RthJK Features * Package with screw terminals * Isolation voltage 3000 V~ * Planar passivated chips * Blocking voltage up to 1800 V * Low forward voltage drop * UL registered E 72873 Applications * Supplies for DC power equipment * Input rectifiers for PWM inverter * Battery DC power supplies * Field supply for DC motors Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394") Characteristic Values diode; 180 module; 180 diode; 180 module; 180 Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 1-2 VBO 125 I F(OV) -----I FSM 200 10 IFSM (A) A TVJ=45C 160 T=150C 2 As TVJ=150C 1800 1.6 5 1600 1.4 120 1.2 10 80 TVJ=45C 4 TVJ=150C 1 0 V RRM 0.8 1/2 V RRM 40 T=25C 0.6 IF 0 VF 1 10 0.4 1.5 V 10 Fig. 1 Forward current versus voltage drop per diode 300 [W] 1 V RRM 0 1 2 10 t[ms] 10 10 3 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration TC 3 2 1 4 t [ms] 0.19 0.11 150 250 DC sin.180 rec.120 rec.60 rec.30 [A] = RTHCA [K/W] 90 0.28 95 100 200 10 Fig. 3 I2dt versus time (1-10ms) per diode or thyristor 85 PSB 125 6 100 105 0.44 110 115 150 120 50 0.77 125 100 DC 130 sin.180 135 1.77 50 140 rec.60 145 rec.30 PVTOT 0 IdAV 0 rec.120 C 50 100 TC(C) 150 200 150 50 100 IFAVM 0 [A] 50 100 Tamb 150 [K] Fig. 4 Power dissipation versus direct output current and ambient temperature Fig.5 Maximum forward current at case temperature 1.5 K/W Z thJK Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode/thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100706a 2-2