© 2010 IXYS All rights reserved 1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 125
20100706a
Symbol Conditions Maximum Ratings
IdAVM TC = 85°C, module 124 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 1800 A
VR = 0 t = 8.3 ms (60 Hz), sine 1950 A
TVJ = TVJM t = 10 ms (50 Hz), sine 1600 A
VR = 0 t = 8.3 ms (60 Hz), sine 1800 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 16200 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 16000 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 12800 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 13600 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
IISOL ≤ 1 mA t = 1 s 3000 V~
MdMounting torque (M5) 5 ±15% Nm
44 ±15% lb.in.
Terminal connection torque (M5) 5 ±15% Nm
44 ±15% lb.in.
Weight typ. 225 g
IdAVM = 124 A
VRRM = 800-1600 V
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power cycling
Symbol Conditions Characteristic Values
IRVR = VRRM;T
VJ = 25°C≤0.3 mA
VR = VRRM;T
VJ = TVJM ≤8.0 mA
VFIF = 150 A; TVJ = 25°C≤1.3 V
VT0 For power-loss calculations only 0.8 V
rTTVJ = TVJM 3mΩ
RthJC per diode; 180° 0.83 K/W
per module; 180° 0.138 K/W
RthJK per diode; 180° 1.13 K/W
per module; 180° 0.188 K/W
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode unless otherwise stated.
Single Phase
Rectifier Bridge
+
–
~
~
VRSM VRRM Type
VV
900 800 VBO 125-08NO7
1300 1200 VBO 125-12NO7
1700 1600 VBO 125-16NO7
© 2010 IXYS All rights reserved 2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
VBO 125
20100706a
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per diode
IFSM: Crest value. t: duration
Fig.5 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus direct output current
and ambient temperature
Fig. 3 I2dt versus time (1-10ms)
per diode or thyristor
Fig. 6 Transient thermal impedance per diode/thyristor, calculated
11.5
0
40
80
120
160
200
IF
VF
A
V
T=150°C
T=25°C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0 10
1 10
2 10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
1800 1600
I
------
I
FSM
F(O V)
0 V
RRM
1/ 2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
3
4
5
As
2
10050
0
50
100
150
200
250
300
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.77
0.77
0.44
0.28
0.19 0.11 = RTHCA [K/W]
IFAVM [A] Tamb [K]
050100150
[W]
PVTOT
PSB 125
50 100 150 200
0
50
100
150 DC
sin.180°
rec.120°
rec.60°
rec.30°
T (°C)
C
I
dAV
[A]
0.01 0.1 110
0.5
1
1.5
K/W
Zth
t[s]
ZthJK
ZthJC
