DATA SH EET
Product specification
File under Discrete Semiconductors, SC14 September 1995
DISCRETE SEMICONDUCTORS
BFG94
NPN 6 GHz wideband transistor
September 1995 2
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
FEATURES
•High power gain
•Low noise figure
•Low intermodulation distortion
•Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN transistor mounted in a plastic
SOT223 envelope. It is primarily
intended for use in communication
and instrumentation systems.
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
Fig.1 SOT223.
p
age
4
123
MSB002 - 1
Top view
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter −−15 V
VCEO collector-emitter voltage open base −−12 V
ICDC collector current −−60 mA
Ptot total power dissipation up to Ts = 140 °C (note 1) −−700 mW
Cre feedback capacitance IC = 0; VCE = 10 V; f = 1 MHz −−0.8 pF
fTtransition frequency IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C46−GHz
GUM maximum unilateral power gain IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C11.5 13.5 −dB
VOoutput voltage IC = 45 mA; VCE = 10 V;
dim = −60 dB; RL = 75 Ω;
f = 800 MHz; Tamb = 25 °C
−500 −mV
PL1 output power at 1 dB gain
compression IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C−21.5 −dBm
September 1995 3
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −15 V
VCEO collector-emitter voltage open base −12 V
VEBO emitter-base voltage open collector −2V
I
CDC collector current −60 mA
Ptot total power dissipation up to Ts = 140 °C (note 1) −700 mW
Tstg storage temperature −65 150 °C
Tjjunction temperature −175 °C
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
Rth j-s thermal resistance from junction to
soldering point up to Ts = 140 °C (note 1) 50 K/W
September 1995 4
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2. dim = −60 dB (DIN 45004B, par 6.3: 3-tone); IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = VO at dim = −60 dB; fp = 795.25 MHz;
Vq = VO−6 dB; Vr = VO−6 dB;
fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz.
3. IC = 45 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vq = VO = 280 mV;
fp = 250 MHz; fq = 560 MHz;
measured at f(p+q) = 810 MHz.
4. IC = 45 mA; VCE = 10 V; RL = 50 Ω;T
amb = 25 °C;
fp = 1000 MHz; fq = 1001 MHz;
measured at f(2p−q) and f(2q−p).
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE = 0; VCB = 10 V −−100 nA
hFE DC current gain IC = 30 mA; VCE = 5 V 45 90 −
IC = 45 mA; VCE = 10 V −100 −
Cccollector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz −0.9 2 pF
Ceemitter capacitance IC = ie = 0; VEB = 0.5 V; f = 1 MHz −2.9 4.5 pF
Cre feedback capacitance IC = ic = 0; VCE = 10 V; f = 1 MHz −0.5 0.8 pF
fTtransition frequency IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C4−− GHz
IC = 30 mA; VCE = 5 V; f = 1 GHz;
Tamb = 25 °C46−GHz
GUM maximum unilateral power gain
(note1) IC = 45 mA; VCE = 10 V; f = 1 GHz;
Tamb = 25 °C11.5 13.5 −dB
F minimum noise figure Γs = Γopt; IC = 45 mA; VCE = 10 V;
f = 500 MHz −2.7 −dB
Γs = Γopt; IC = 45 mA; VCE = 10 V;
f = 1 GHz −3−dB
VOoutput voltage note 2 −500 −mV
d2second order intermodulation
distortion note 3 −−51 −dB
PL1 output power at 1 dB gain
compression IC = 45 mA; VCE = 10 V; RL = 50 Ω;
Tamb = 25 °C; measured at f = 1 GHz −21.5 −dBm
ITO third order intercept point note 4 −34 −dBm
GUM 10 S21 2
1S
11 2
–


1S
22 2
–


-------------------------------------------------------------- dB.log=
September 1995 5
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
Fig.2 Test circuit for second and third order
intermodulation distortion.
L1 = L3 = 5 µH micro-choke.
L2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm.
MBB780
10 kΩ L2
L1
1 nF
output
75 Ω
247 Ω
1 nF
L3
1 nF
DUT
input
75 Ω
+VBB +VCC
2 pF 33 Ω33 Ω
Fig.3 Measurement set-up for third order
intercept point and 1 dB gain compression.
MBB789
INPUT SLUG TUNER
OUTPUT SLUG TUNER
BIAS
TEE input
output
DUT
TEST
FIXTURE
BIAS
TEE
Fig.4 Power derating curve.
handbook, halfpage
0 50 100 200
800
600
200
0
400
MBB790
150 Ts (°C)
Ptot
(mW)
Fig.5 DC current gain as a function of collector
current.
VCE = 10 V; Tj=25°C
handbook, halfpage
0102030
120
0
40
80
MCD087
hFE
I (mA)
C
September 1995 6
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
Fig.6 Feedback capacitance as a function of
collector-emitter voltage.
IC = ic = 0; f = 1 MHz.
handbook, halfpage
VCE (V)
048 16
1
0
0.8
MBB791
12
0.6
0.4
0.2
Cre
(pF)
Fig.7 Transition frequency as a function of
collector current.
VCE = 10 V; f = 1 GHz.
handbook, halfpage
01020 40
8
6
2
0
4
MCD089
30 I (mA)
C
(GHz)
T
f
Fig.8 Maximum unilateral power gain as a
function of frequency.
Ic= 45 mA; VCE = 10 V.
handbook, halfpage
MBB792
60
0
20
40
40 400 4000
f (MHz)
GUM
(dB)
Fig.9 Maximum unilateral power gain as a
function of frequency.
Ic= 20 mA; VCE = 8 V.
handbook, halfpage
40
0
20
30
10
MBB793
102103104
10
f (MHz)
GUM
(dB)
September 1995 7
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
Fig.10 Maximum available stable gain as a
function of frequency.
Ic= 20 mA; VCE = 8 V.
handbook, halfpage
20
0
10
15
10
MBB794
102103104
5
f (MHz)
Gmax
(dB)
Fig.11 Gain as a function of collector current.
VCE = 8 V; f = 1 GHz.
Gmax = maximum available stable gain.
GUM = maximum unilateral power gain.
handbook, halfpage
0
30
20
10
050
MBB795
10 20 30 40
gain
(dB)
I (mA)
C
Gmax
GUM
Fig.12 Second order intermodulation distortion as
a function of collector current.
Ic= 45 mA; VCE = 10 V; f(p+q) = 810 MHz.
See test circuit, Fig.2
handbook, halfpage
10 30 70
20
80
MBB782
50
40
60
I (mA)
C
d2
(dB)
Fig.13 Third order intermodulation distortion as a
function of collector current.
Ic= 45 mA; VCE = 10 V; f(p+q−r) = 793.25 MHz.
See test circuit, Fig.2
handbook, halfpage
10 30 70
20
80
MBB781
50
40
60
I (mA)
C
d3
(dB)
September 1995 8
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
Fig.14 Minimum noise figure as a function of
collector current.
VCE = 8 V.
handbook, halfpage
4
2
1
0
MCD094
101
3
F
(dB)
I (mA)
C
f = 2 GHz
500 MHz
1 GHz
102
September 1995 9
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
handbook, full pagewidth
MBB788
0.2
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
− j
5 dB
unstable region
stability
circle
0.5
110520.50.2
F = 1.80 dB
min
OPT
2 dB
2.5 dB
3 dB
4 dB
∞
Fig.15 Noise circle.
Ic= 15 mA; VCE = 10 V; f = 500 MHz.
handbook, full pagewidth
∞
MBB787
0.2
0.5
1
2
5
10
0.2
0.5
1
2
5
10
0
+ j
− j
3 dB
4 dB
11052
0.5
0.2
F = 2.25 dB
min
OPT
2.5 dB
3.5 dB
5 dB
Fig.16 Noise circle.
Ic= 15 mA; VCE = 10 V; f =1 GHz.
September 1995 10
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
handbook, full pagewidth
MBB784
10
25
50
100
250
10
25
50
100
250
0
+ j
– j
25
3 GHz
10 100 25050
40 MHz
∞
Fig.17 Common emitter input reflection coefficient (S11).
IC= 45 mA; VCE = 10 V.
ZO=50Ω.
handbook, full pagewidth
MBB786
180°
+ ϕ
− ϕ
0°
30°
60°
90°
120°
150°
150°
120°
90°
60°
30°
0.4 0.20.5 0.3 0.1 40 MHz
3 GHz
Fig.18 Common emitter forward transmission coefficient (S21).
IC= 45 mA; VCE = 10 V.
September 1995 11
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
handbook, full pagewidth
MBB785
180°
+ ϕ
− ϕ
0°
30°
60°
90°
120°
150°
150°
120°
90°
60°
30°
40 2050 30 10
40 MHz
3 GHz
Fig.19 Common emitter reverse transmission coefficient (S12).
IC= 45 mA; VCE = 10 V.
handbook, full pagewidth
MBB783
10
25
50
100
250
10
25
50
100
250
0
+ j
– j
10 25 100 25050
3 GHz
40 MHz
∞
Fig.20 Common emitter output reflection coefficient (S22).
IC= 45 mA; VCE = 10 V.
ZO=50Ω.
September 1995 12
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
PACKAGE OUTLINE
UNIT A1bpcDEe
1H
EL
pQywv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 0.10
0.01
1.8
1.5 0.80
0.60
b1
3.1
2.9 0.32
0.22 6.7
6.3 3.7
3.3 2.3
e
4.6 7.3
6.7 1.1
0.7 0.95
0.85 0.1 0.10.2
DIMENSIONS (mm are the original dimensions)
SOT223 96-11-11
97-02-28
wM
bp
D
b1
e1
e
A
A1
Lp
Q
detail X
HE
E
vMA
AB
B
c
y
0 2 4 mm
scale
A
X
132
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223
September 1995 13
Philips Semiconductors Product specification
NPN 6 GHz wideband transistor BFG94
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.