PD - 95490 AUTOMOTIVE MOSFET IRF2204PbF Typical Applications O O O HEXFET(R) Power MOSFET Electric Power Steering 14 Volts Automotive Electrical Systems Lead-Free D VDSS = 40V Features O O O O O O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 3.6m G ID = 210A S Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 screw Max. Units 210 150 850 330 2.2 20 460 See Fig.12a, 12b, 15, 16 -55 to + 175 A W W/C V mJ A mJ C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RCS RJA www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. Max. Units --- 0.50 --- 0.45 --- 62 C/W 1 06/30/04 IRF2204PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 40 --- --- 2.0 120 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.041 3.0 --- --- --- --- --- --- 130 35 39 15 140 62 110 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance --- 4.5 LS Internal Source Inductance --- 7.5 Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 5890 1570 130 8000 1370 2380 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 3.6 m VGS = 10V, ID = 130A 4.0 V VDS = 10V, ID = 250A --- S VDS = 10V, ID = 130A 20 VDS = 40V, VGS = 0V A 250 VDS = 32V, VGS = 0V, TJ = 150C 200 VGS = 20V nA -200 VGS = -20V 200 ID = 130A 52 nC VDS = 32V 59 VGS = 10V --- VDD = 20V --- ID = 130A ns --- RG = 2.5 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 32V, = 1.0MHz --- VGS = 0V, VDS = 0V to 32V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 210 showing the A G integral reverse --- --- 850 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 130A, VGS = 0V --- 68 100 ns TJ = 25C, IF = 130A --- 120 180 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRF2204PbF TOP I D, Drain-to-Source Current (A) 1000 BOTTOM 10000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP 1000 I D, Drain-to-Source Current (A) 10000 100 4.5V 10 BOTTOM 100 4.5V 10 20s PULSE WIDTH T J= 25 C 20s PULSE WIDTH T J= 175 C 1 1 0.1 1 10 100 0.1 1 V DS, Drain-to-Source Voltage (V) 10 100 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 2.5 I D = 210A ID , Drain-to-Source Current ( ) T J = 175C 100.00 T J = 25C VDS = 25V 20s PULSE WIDTH 10.00 4.0 5.0 6.0 7.0 8.0 9.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10.0 (Normalized) RDS(on) , Drain-to-Source On Resistance 2.0 1.5 1.0 0.5 V GS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature 100 120 140 160 180 ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF2204PbF 100000 I D = 130A VDS = 32V VDS = 20V 10 VGS , Gate-to-Source Voltage (V) Coss = Cds + Cgd 10000 C, Capacitance(pF) 12 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Ciss Coss 1000 Crss 100 8 6 4 2 10 0 1 10 0 100 30 VDS, Drain-to-Source Voltage (V) 120 150 10000 ID, Drain-to-Source Current (A) 1000 TJ = 175 C OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100 I SD , Reverse Drain Current (A) 90 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 T J= 25 C 1 V GS = 0 V 0.0 0.5 1.0 1.5 2.0 V SD,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 100sec 1msec 10 10msec Tc = 25C Tj = 175C Single Pulse 1 0.1 4 60 QG, Total Gate Charge (nC) 2.5 1 10 100 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF2204PbF 250 VGS 200 D.U.T. RG ID , Drain Current (A) RD VDS LIMITED BY PACKAGE 150 + -VDD 10V Pulse Width 1 s Duty Factor 0.1 % 100 Fig 10a. Switching Time Test Circuit 50 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms (Z thJC ) 1 D = 0.50 0.1 0.20 Thermal Response 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM 0.01 t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.001 0.00001 0.0001 0.001 0.01 t1 / t 2 J = P DM x Z thJC +TC 0.1 1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF2204PbF 900 ID 52A 91A 15V TOP 750 + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp A EAS , Single Pulse Avalanche Energy (mJ) D.U.T RG BOTTOM DRIVER L VDS 130A 600 450 300 150 0 25 50 75 100 125 150 175 ( C) Starting Tj, Junction Temperature I AS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG 10 V QGD 4.0 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2F .3F D.U.T. + V - DS VGS(th) Gate threshold Voltage (V) QGS 3.5 3.0 ID = 250A 2.5 2.0 1.5 1.0 -75 -50 -25 VGS 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 Fig 14. Threshold Voltage Vs. Temperature www.irf.com IRF2204PbF 1000 Duty Cycle = Single Pulse Avalanche Current (A) 0.01 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses 100 0.05 0.10 10 1 1.0E-07 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 10% Duty Cycle ID = 210A 400 300 200 100 0 25 50 75 100 125 150 Starting T J , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature www.irf.com Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). t av = Average time in avalanche. 175 D = Duty cycle in avalanche = t av *f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav 7 IRF2204PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * dv/dt controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test V GS * + - V DD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D= P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple 5% [ISD] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 17. For N-channel HEXFET(R) power MOSFETs 8 www.irf.com IRF2204PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 4 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS LEAD ASSIGNMENTS IGBTs, CoPACK 1 - GATE 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- COLLECTOR 2- DRAIN 3- EMITTER 3- SOURCE 4 - DRAIN 1.15 (.045) MIN 1 2 3 4- DRAIN 14.09 (.555) 13.47 (.530) 3X HEXFET 4- COLLECTOR 4.06 (.160) 3.55 (.140) 0.93 (.037) 3X 0.69 (.027) 1.40 (.055) 1.15 (.045) 0.36 (.014) 3X M B A M 2.92 (.115) 2.64 (.104) 2.54 (.100) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 2 CONTROLLING DIMENSION : INCH 0.55 (.022) 0.46 (.018) 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T H IS IS AN IR F 1010 L OT CODE 1789 AS S E MB L E D ON WW 19, 1997 IN T H E AS S E MB L Y L INE "C" Note: "P" in assembly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE PAR T NU MB E R DAT E CODE YE AR 7 = 1997 WE E K 19 L INE C Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.06mH RG = 25, IAS = 130A. (See Figure 12). ISD 130A, di/dt 170A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04 www.irf.com 9