wr SGS-THOMSON 7 ivicrozLectRowies MJE340/T/SGS340 MJE350/T/SGS350 HIGH VOLTAGE POWER TRANSISTORS DESCRIPTION The MJE340, MJE340T, SGS340 are silicon epi- taxial planar NPN transistors intended for use in medium power linear and switching applications. They are respectively mounted in TO-125, TO-220 and SOT-82 package. The complementary PNP types are respectively the MJE350, MJE350T, SGS350. SOT-82 INTERNAL SCHEMATIC DIAGRAMS Cc Cc 8 B PNP NPN 5-6096 5-6097 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vceo Collector-emitter Voltage (Ip = 0) 300 Vv VeEBo Emitter-base Voltage (Ic = 0) 3 v le Collector Current 0.5 A Prot Total Power Dissipation at Tease < 25C 20.8 Ww Tstg Storage Temperature 65 to 150 C Tj Junction Temperature 150 C December 1988 1/3 837Mie BOGU/ OGL ev Bool THERMAL DATA sO ey Oh | Rin j-case | Thermal Resistance Junction-case Max | 6.0 | cw | ELECTRICAL CHARACTERISTICS (T,as = 25C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit IcBo Collector Cutoff Current (le = 0)} Vcg = 300V 100 HA leBo Emitter Cutoff Current (lc = 0) | Veg = 3V 100 HA Veceo(sus) | Collector-Emitter Sustaining _ Voltage (Ip = 0) Ic = 1mA 300 v Nee DC Current Gain Ic = 50mMA Vee = 10V 30 240 * Pulsed : pulse duration = 300us, duty cycle < 2%. Safe Operating Areas. DC Current Gain (NPN). 6-529 6.4033 Tes re ta 2 MAX PULSED PULSE OPERATION 8 = 6 1 3 neoh nowt Nn 5 2 or 6a Veg (Y) DC Current Gain (PNP). G-4027 hre Vee: t0 100 50 2/3 838 ky MICROELECTROMICS 2 0? 4 8a z 4 68 2 4 10-1 Ig (A) Collector-emitter Saturation Voltage (NPN). G-4035 (vy 5 Ig SGS-THOMSON %-+ * tyt ot ee - . Vw Sei We BO ie We ee me eee Collector-emitter Saturation Voltage (PNP). G-4028 hee =10 as GS-TH 3/3 ky7 SES-THOMSON 839