TIP110/112
TIP115/117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■STMicr o electronics PREF E RRED
SALESTYPES
■COMPLEMENTARY PNP - NPN DEVICES
■MON OLI T HIC DA RLING T O N
CONF IG U R ATIO N
■INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The TIP110 and TIP112 are silicon
Epitaxial-Base NPN transistors in monolithic
Darlington configuration mounted in Jedec
TO-220 plastic package. They are intented for
use in medium power linear and switching
applications.
The complementary PNP types are TIP115 and
TIP117.
INT E R NAL SCH E M ATI C DIAG RA M
R1 Typ.= 7K Ω R2 Typ.= 23 0
June 1999
123
TO-220
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
NPN TIP110 TIP112
PNP TIP115 TIP117
VCBO Collector-Base Voltag e (IE = 0) 60 100 V
VCEO Collector-Emitter Voltage (IB = 0) 60 100 V
VEBO Emitter-Base Voltage (IC = 0) 5 V
ICCollector Current 2 A
ICM Collector Peak Current 4 A
IBBase Current 50 m A
Ptot Total Dissipation at Tcase ≤ 25 oC
Tamb ≤ 25 oC50
2W
W
Tstg Storage Temperature -65 to 150 oC
TjMax. Operating Junction Temperature 150 oC
* For PNP types volt age and c urrent values are negative
®
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THERMAL DATA
Rthj-case
Rthj-amb Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max 2.5
62.5
oC/W
oC/W
ELE CT RICAL CHAR ACT ERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Pa ra meter Test Conditions Min. Typ. Max. Unit
ICEO Collector Cut-off
Current (IB = 0) VCE = Half Rated VCEO 2mA
I
CBO Collector Cut-off
Current (IE = 0) VCB = Rated VCBO 1mA
I
EBO Emitter Cut-off Current
(IC = 0) VEB = 5 V 2 mA
VCEO(sus)∗Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 30 mA
for TIP110/115
for TIP112/117 60
100 V
V
VCE(sat)∗Collector-Emitter
Saturation Voltage IC = 2 A IB = 8 mA 2.5 V
VBE∗Base-Emitter Voltage IC = 2 A VCE = 4 V 2.8 V
hFE∗DC Current Ga in IC = 1 A VCE = 4 V
IC = 2 A VCE = 4 V 1000
500
∗ P ulsed: P ulse duration = 300 µs, duty cycle 1.5 %
For PNP types volt ag e and current values are negative.
Safe O perat ing Areas Derating Curve
TIP110/TIP112/TIP115/TIP117
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D C Current Ga in (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Base- Em it ter Sat uration Volt age (NPN type )
DC Current Gain (P NP ty pe)
Collector- Em itter Sat uration Volt age (PNP type)
Base- Em itter Sat uration Volt a ge (PNP type)
TIP110/TIP112/TIP115/TIP117
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Ba se-Em it ter O n Voltage (NPN ty pe) Base- Em itter On Volt age (PNP ty pe)
Freewheel Diode Forward Voltage (NPN types) Freewheel Diode Forward V oltage (PNP types)
TIP110/TIP112/TIP115/TIP117
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DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
P011C
TO-220 MECHANICAL DATA
TIP110/TIP112/TIP115/TIP117
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