TIP112 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 4
www.unisonic.com.tw QW-R203-022.C
ABSOLUTE MAXIMUM RATING (Ta=25°C)
PARAMETER SYMBOL RATINGS UNIT
Collector to Base Voltage VCBO 100 V
Collector to Emitter Voltage VCEO 100 V
Emitter to Base Voltage VEBO 5 V
DC IC 2
Collector Current Peak ICM 4
A
Base Current (DC) IB 50 mA
Ta=25°C 2
Collector Dissipation TC=25°C PC 50 W
Junction Temperature TJ 150 °C
Storage Temperature TSTG -65~+150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage VCEO(SUS) IC=30mA, IB=0A 100 V
Collector-Emitter Saturation Voltage VCE(SAT) I
C=2A, IB=8mA 2.5 V
Base-Emitter Turn-On Voltage VBE(ON) V
CE=4V, IC=2A 2.8
Collector-Base Cut-Off Current ICBO V
CB=100V, IE=0A 1 mA
Collector-Emitter Cut-Off Current ICEO V
CE=50V, VB=0A 2 mA
Emitter-Base Cut-Off Current IEBO V
EB=5V, IC=0A 2 mA
VCE=4V, IC=1A 1000
DC Current Gain hFE VCE=4V, IC=2A 500
Collector Capacitance COB V
CB=10V, IE=0A, f=0.1MHz 100 pF