UNISONIC TECHNOLOGIES CO., LTD
2N3772 SILICON NPN TRANSISTOR
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Copyright © 2012 Unisonic Technologies Co., LTD QW-R205-002,Ba
SILICON NPN TRANSISTORS
DESCRIPTION
The UTC 2N3772 is a silicon power transistor in TO-3 metal
case. It is designed for linear amplifiers, series pass regulators,
and inductive switching applications.
TO-3
1
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
2N3772L-T30-Y 2N3772G-T30-Y TO-3 B E C Tray
2N3772 SILICON NPN TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R205-002,Ba
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified )
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO 100 V
Collector-Emitter Voltage VCEO 60 V
Emitter-Base Voltage VEBO 7 V
Collector-Emitter Voltage VCEV 80 V
Collector Current IC 30 A
Collector Peak Current (Note 1) ICM 30 A
Base Current IB 5 A
Base Peak Current (Note 1) IBM 15 A
Power Dissipation (TA=25℃) PD 150 W
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -55 ~ +150 ℃
Note 1. Pulse Test: PW<=300μs, Duty Cycle<=2%
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage VCEX
(
SUS
)
IC=0.2A,VBE
(
OFF
)
=1.5V,RBE=100Ω 80 V
Collector-Emitter Sustaining Voltage VCER
(
SUS
)
IC=0.2A, RBE=100Ω 70 V
Collector-Emitter Sustaining Voltage VCEO
(
SUS
)
IC=0.2A, IB=0 60 V
Collector Cut-off Current ICEO V
CE=50V,IB=0 10 mA
Collector Cut-off Current ICEX VCE=100V, VBE
(
OFF
)
=1.5V. 5
mA
VCE=30V, VBE(OFF)=1.5V, TA=150℃ 10
Collector Cut-off Current ICBO V
CE=50V, IE=0 5 mA
Emitter Cut-off Current IEBO V
BE=7V, IC=0 5 mA
ON CHARACTERISTICS
DC Current Gain (Note) hFE IC=10A,VCE=4V 15 60
IC=20A, VCE=4V 5
Collector-Emitter Saturation Voltage VCE(SAT)
IC=10A, IB=1.5A 1.4 V
IC=20A, IB=4A 4.0
Base-Emitter On Voltage VBE
(
ON
)
IC=10A, VCE=4V 2.2 V
SECOND BREAKDOWN
Second Breakdown Collector with Base
Forward Biased IS/b VCE=60V, T=1.0s, Non-repetitive 2.5 A
DYNAMIC CHARACTERISTICS
Current Gain-Bandwidth Product fT I
C=1A, VCE=4V, f=50kHz 0.2 MHz
Small-Signal Current Gain hFE I
C=1A, VCE=4V, f=1kHz 40
Note: Pulse Test: PW<=300μs, Duty Cycle<=2%
2N3772 SILICON NPN TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 3
www.unisonic.com.tw QW-R205-002,Ba
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
