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SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1
November 2014
SMBJ5V0(C)A - SMBJ170(C)A
600 Watt Transient Voltage Suppressors
Features
• Glass-Passi vated Junction
• 600 W Peak Pulse Power Capability
on 10/1000 μs Waveform.
• Excellent Clamping Capability
• Low-Incremental Surge Resistance
• Fast Response Time: Typically Less than 1.0 ps from 0 V
to BV minimum for Unidirectional and 5.0 ns for Bidirectional
•Typical I
R Less than 1. 0 μA Above 10 V
• UL Certificate #E258596
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum.
Symbol Parameter Value Unit
PPPM Peak Pulse Power Dissipation on 10/1000 μs Waveform 600 W
IPPM Peak Pulse Current on 10/1000 μs Waveform See Table A
IFSM Non-Repetitive Peak Forward Surge Current
Superimposed on Rated Load (JEDEC Method)(1) 100 A
TSTG Storage Temperature Range -55 to 150 °C
TJOperating Junc tion Temperature Range -55 to 150 °C
SMB/DO-214AA
Band denotes cathode on unidirectional devices only.
No band on bi-directional devices. Bi-directional types
have CA suffix where electrical characteristics apply in
both directions suitable for bi-directional applicatio ns.
SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices.
3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled.
Uni-Directional
Bi-Directional (C)
Device
Part
Marking(2)
Reverse
Stand-Off
Voltage
VRWM (V)
Breakdown
Voltage
VBR (V)
Test
Current
IT (mA)
Clamping
Voltage
at IPPM
VC (V)
Peak Pulse
Current
IPPM (A)
Reverse
Leakage
at VRWM
IR (μA)(3)
Min. Max.
SMBJ5V0(C)A KE 5.0 6.40 7.00 10 9.2 65.2 800
SMBJ6V0(C)A KG 6.0 6.67 7.37 10 10.3 58.3 800
SMBJ6V5(C)A KK 6.5 7.22 7.98 10 11.2 53.6 500
SMBJ7V0(C)A KM 7.0 7.78 8.60 10 12.0 50.0 200
SMBJ7V5(C)A KP 7.5 8.33 9.21 1 12.9 46.5 100
SMBJ8V0(C)A KR 8.0 8.89 9.83 1 13.6 44.1 50
SMBJ8V5(C)A KT 8.5 9.44 10.4 1 14.4 41.7 20
SMBJ9V0(C)A KV 9.0 10.0 11.1 1 15.4 39.0 10
SMBJ10(C)A KX 10 11.1 12.8 1 17.0 35.3 5
SMBJ11(C)A KZ 11 12.2 13.5 1 18.2 33.0 5
SMBJ12(C)A LE 12 13.3 14.7 1 19.9 30.2 5
SMBJ13(C)A LG 13 14.4 15.9 1 21.5 27.9 5
SMBJ14(C)A LK 14 15.6 17.2 1 23.2 25.9 5
SMBJ15(C)A LM 15 16.7 18.5 1 24.4 24.6 5
SMBJ16(C)A LP 16 17.8 19.7 1 26.0 23.1 5
SMBJ17(C)A LR 17 18.9 20.9 1 27.6 21.7 5
SMBJ18(C)A LT 18 20.0 22.1 1 29.2 20.5 5
SMBJ20(C)A LV 20 22.2 24.5 1 32.4 18.5 5
SMBJ22(C)A LX 22 24.4 26.9 1 35.5 16.9 5
SMBJ24(C)A LZ 24 26.7 29.5 1 38.9 15.4 5
SMBJ26(C)A ME 26 28.9 31.9 1 42.1 14.3 5
SMBJ28(C)A MG 28 31.1 34.4 1 45.4 13.2 5
SMBJ30(C)A MK 30 33.3 36.8 1 48.4 12.4 5
SMBJ33(C)A MM 33 36.7 40.6 1 53.3 11.3 5
SMBJ36(C)A MP 36 40.0 44.2 1 58.1 10.3 5
SMBJ40(C)A MR 40 44.4 49.1 1 64.5 9.3 5
SMBJ43(C)A MT 43 47.8 52.8 1 69.4 8.6 5
SMBJ45(C)A MV 45 50.0 55.3 1 72.7 8.3 5
SMBJ48(C)A MX 48 53.3 58.9 1 77.4 7.8 5
SMBJ51(C)A MZ 51 56.7 62.7 1 82.4 7.3 5
SMBJ54(C)A NE 54 60.0 66.3 1 87.1 6.9 5
SMBJ58(C)A NG 58 64.4 71.2 1 93.6 6.4 5
SMBJ60(C)A NK 60 66.7 73.7 1 96.8 6.2 5
SMBJ64(C)A NM 64 71.1 78.6 1 103.0 5.8 5
SMBJ70(C)A NP 70 77.8 86.0 1 113.0 5.3 5
SMBJ75(C)A NR 75 83.3 92.1 1 121.0 5.0 5
SMBJ78(C)A NT 78 86.7 95.8 1 126.0 4.8 5
SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 3
Electrical Characteristics (Continued)
Values are at TA = 25°C unless otherwise noted.
Notes:
2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices.
3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled.
Uni-Directional
Bi-Directional (C)
Device
Part
Marking(2)
Reverse
Stand-Off
Voltage
VRWM (V)
Breakdown
Voltage
VBR (V)
Test
Current
IT (mA)
Clamping
Voltage
at IPPM
VC (V)
Peak Pulse
Current
IPPM (A)
Reverse
Leakage
at VRWM
IR (μA)(3)
Min. Max.
SMBJ85(C)A NV 85 94.4 104.0 1 137.0 4.4 5
SMBJ90(C)A NX 90 100.0 111.0 1 146.0 4.1 5
SMBJ100(C)A NZ 100 111.0 123.0 1 162.0 3.7 5
SMBJ110(C)A PE 110 122.0 135.0 1 177.0 3.4 5
SMBJ120(C)A PG 120 133.0 147.0 1 193.0 3.1 5
SMBJ130(C)A PK 130 144.0 159.0 1 209.0 2.9 5
SMBJ150(C)A PM 150 167.0 185.0 1 243.0 2.5 5
SMBJ160(C)A PP 160 178.0 197.0 1 259.0 2.3 5
SMBJ170(C)A PR 170 189.0 209.0 1 275.0 2.2 5
SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 4
Typical Performance Characteristics
Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve
Figure 3. Pulse Waveform Figure 4. Junction Capacit anc e
Figure 5. Non-Repetitive Surge Current
0.0001 0.001 0.01 0.1 1 10
0.1
1
10
100
PULSE W IDTH (ms)
PULSE POWER (kW)
T = 25 C
º
A
0 25 50 75 100 125 150 175 200
0
25
50
75
100
AMBIENT TEMPERATURE ( C)
PULSE POWER (%)
º
01234
0
50
100
150
TIME (ms)
PEAK PULSE CURRENT (%)
T = 25 C
º
A
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of Ipp
10/1000μ
μμ
μsec Waveform
as Defined by R.E.A.
tf = 10μ
μμ
μsec
e-kt
Peak Value
Ippm
Half Value-Ipp
2
td
1 5 10 50 100 200
10
20
50
100
200
500
1000
2000
4000
6000
REVERSE VOLTAGE (V)
CAPACITANCE (pF)
T = 25 C
º
A
f = 1.0 MHz
Visg = 50m Vp-p
Meas ured at
Zero Bias
Meas ured at
Stand-Off
Voltage (V )
RWM
12 51020 50100
10
20
50
100
200
NUMBER OF CYCLES AT 60Hz
FORWARD SURGE CURRENT (A)
T = T max
8.3ms Single Half Sine-Wave
JEDEC Method
A A
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www.onsemi.com
1
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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