LESHAN RADIO COMPANY, LTD.
LMUN5211DW–1/10
1
3
2
LMUN5211DW1T1
Series
SC-88/SOT-363
6
4
5
Dual Bias ResistorTransistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
13
2
64
5
Q1
Q2
R1
R2
R1R2
7X
MARKING DIAGRAM
132
645
DEVICE MARKING
INFORMATION
See specific marking information in
the device marking table on page 2 of
this data sheet.
7X = Device Marking
=(See Page 2)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
MAXIMUM RATINGS (T A= 25°C unless otherwise noted, common for Q 1and Q 2)
Rating Symbol Value Unit
Collector-Base Voltage V CBO 50 Vdc
Collector-Emitter Voltage V CEO 50 Vdc
Collector Current I C100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation P D187 (Note 1.) mW
T A= 25°C
Derate above 25°C mW/°C
Thermal Resistance – R θJA 670 (Note 1.) °C/W
Junction-to-Ambient 490 (Note 2.)
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
TA= 25°C
Derate above 25°C
PD250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient RθJA 493 (Note 1.)
325 (Note 2.) °C/W
Thermal Resistance –
Junction-to-Lead RθJL 188 (Note 1.)
208 (Note 2.) °C/W
Junction and Storage
Temperature TJ, T stg –55 to +150 °C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base–emitter resistor .These
digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device. In
the LMUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which
is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
LESHAN RADIO COMPANY, LTD.
LMUN5211DW-2/10
LMUN5211DW1T1 Series
DEVICE MARKING , RESISTOR VALUES AND ORDERING INFORMATION
Device Package Marking R1(K) R2(K) Shipping
LMUN5211DW1T1 SOT-363 7A 10 10 3000/Tape&Reel
LMUN5211DW1T1G SOT-363 7A(Pb-Free) 10 10 3000/Tape&Reel
LMUN5212DW1T1 SOT-363 7B 22 22 3000/Tape&Reel
LMUN5212DW1T1G SOT-363 7B(Pb-Free) 22 22 3000/Tape&Reel
LMUN5213DW1T1 SOT-363 7C 47 47 3000/Tape&Reel
LMUN5213DW1T1G SOT-363 7C(Pb-Free) 47 47 3000/Tape&Reel
LMUN5214DW1T1 SOT-363 7D 10 47 3000/Tape&Reel
LMUN5214DW1T1G SOT-363 7D(Pb-Free) 10 47 3000/Tape&Reel
LMUN5215DW1T1 SOT-363 7E 10 Ğ3000/Tape&Reel
LMUN5215DW1T1G SOT-363 7E(Pb-Free) 10 Ğ3000/Tape&Reel
LMUN5216DW1T1 SOT-363 7F 4.7 Ğ3000/Tape&Reel
LMUN5216DW1T1G SOT-363 7F(Pb-Free) 4.7 Ğ3000/Tape&Reel
LMUN5230DW1T1 SOT-363 7G 1 1 3000/Tape&Reel
LMUN5230DW1T1G SOT-363 7G(Pb-Free) 1 1 3000/Tape&Reel
LMUN5231DW1T1 SOT-363 7H 2.2 2.2 3000/Tape&Reel
LMUN5231DW1T1G SOT-363 7H(Pb-Free) 2.2 2.2 3000/Tape&Reel
LMUN5232DW1T1 SOT-363 7J 4.7 4.7 3000/Tape&Reel
LMUN5232DW1T1G SOT-363 7J(Pb-Free) 4.7 4.7 3000/Tape&Reel
LMUN5233DW1T1 SOT-363 7K 4.7 47 3000/Tape&Reel
LMUN5233DW1T1G SOT-363 7K(Pb-Free) 4.7 47 3000/Tape&Reel
LMUN5234DW1T1 SOT-363 7L 22 47 3000/Tape&Reel
LMUN5234DW1T1G SOT-363 7L(Pb-Free) 22 47 3000/Tape&Reel
LMUN5235DW1T1 SOT-363 7M 2.2 47 3000/Tape&Reel
LMUN5235DW1T1G SOT-363 7M(Pb-Free) 2.2 47 3000/Tape&Reel
LMUN5236DW1T1 SOT-363 7N 100 100 3000/Tape&Reel
LMUN5236DW1T1G SOT-363 7N(Pb-Free) 100 100 3000/Tape&Reel
LMUN5237DW1T1 SOT-363 7P 47 22 3000/Tape&Reel
LMUN5237DW1T1G SOT-363 7P(Pb-Free) 47 22 3000/Tape&Reel
LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS
(T A= 25°C unless otherwise noted, common for Q 1and Q 2 )
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V CB = 50 V, I E= 0) I CBO – – 100 nAdc
Collector-Emitter Cutoff Current (V CE = 50 V, I B= 0) I CEO – – 500 nAdc
Emitter-Base Cutoff Current LMUN5211DW1T1
(V EB = 6.0 V, I C= 0) LMUN5212DW1T1
LMUN5213DW1T1
LMUN5214DW1T1
LMUN5215DW1T1
LMUN5216DW1T1
LMUN5230DW1T1
LMUN5231DW1T1
LMUN5232DW1T1
LMUN5233DW1T1
LMUN5234DW1T1
LMUN5235DW1T1
LMUN5236DW1T1
LMUN5237DW1T1
IEBO –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= 10 µA, I
E
= 0)
V(BR)CBO 50 – – Vdc
Collector-Emitter Breakdown Voltage(Note 4.)(I
C
= 2.0 mA,I
B
=0)
V(BR)CEO 50 – – Vdc
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
LMUN5211DW-3/10
LMUN5211DW1T1 Series
LESHAN RADIO COMPANY, LTD.
LMUN5211DW–4/10
ELECTRICAL CHARACTERISTICS
(T A= 25°C unless otherwise noted, common for Q 1and Q 2,) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 5.)
DC Current Gain LMUN5211DW1T1
(V CE = 10 V, I C= 5.0 mA) LMUN5212DW1T1
LMUN5213DW1T1
LMUN5214DW1T1
LMUN5215DW1T1
LMUN5216DW1T1
LMUN5230DW1T1
LMUN5231DW1T1
LMUN5232DW1T1
LMUN5233DW1T1
LMUN5234DW1T1
LMUN5235DW1T1
LMUN5236DW1T1
LMUN5237DW1T1
LMUN5211DW1T1 Series
hFE –
–
–
–
–
–
–
–
–
–
–
–
–
–
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
LMUN5211DW1T1
LMUN5212DW1T1
LMUN5214DW1T1
LMUN5215DW1T1
LMUN5216DW1T1
LMUN5230DW1T1
LMUN5231DW1T1
LMUN5232DW1T1
LMUN5233DW1T1
LMUN5234DW1T1
LMUN5235DW1T1
LMUN5213DW1T1
LMUN5236DW1T1
LMUN5237DW1T1
VOL –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.05 V, R
L
= 1.0 kΩ) L
MUN5230DW1T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ) L
MUN5215DW1T1
LMUN5216DW1T1
LMUN5233DW1T1
Collector-Emitter Saturation Voltage
(I
C
= 10mA,I
B
= 0.3 mA)
VCE(sat) – – 0.25 Vdc
(I
C
= 10mA, I
B
= 5mA) LMUN5230DW1T1/LMUN5231DW1T1
(I
C
= 10mA, I
B
= 1mA) LMUN5215DW1T1/LMUN5216DW1T1
LMUN5232DW1T1/LMUN5233DW1T1/LMUN5234DW1T1
VOH 4.9 – – Vdc
5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
LESHAN RADIO COMPANY, LTD.
LMUN5211DW–5/10
Input Resistor LMUN5211DW1T1
LMUN5212DW1T1
LMUN5213DW1T1
LMUN5214DW1T1
LMUN5215DW1T1
LMUN5216DW1T1
LMUN5230DW1T1
LMUN5231DW1T1
LMUN5232DW1T1
LMUN5233DW1T1
LMUN5234DW1T1
LMUN5235DW1T1
LMUN5236DW1T1
LMUN5237DW1T1
LMUN5211DW1T1 Series
ELECTRICAL CHARACTERISTICS
(T A= 25°C unless otherwise noted, common for Q 1and Q 2,) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(Note 6.)
R17.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
Resistor Ratio LMUN5211DW1T1/LMUN5212DW1T1
LMUN5213DW1T1/LMUN5236DW1T1
LMUN5214DW1T1/LMUN5215DW1T1
LMUN5216DW1T1/LMUN5230DW1T1
LMUN5231DW1T1/LMUN5232DW1T1
LMUN5233DW1T1
LMUN5234DW1T1
LMUN5235DW1T1
LMUN5237DW1T1
R1/R20.8
0.17
–
0.8
0.055
0.38
0.038
1.7
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
PD, POWER DISSIPATION (mW)
300
250
200
150
100
50
0
TA, AMBIENT TEMPERA TURE (°C)
Figure 1. Derating Curve
–50 0 50 100 150
833°C
LESHAN RADIO COMPANY, LTD.
LMUN5211DW–6/10
LMUN5211DW1T1 Series
IC, COLLECTOR CURRENT (mA)
Figure 2. V CE(sat) versus I C
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
IC, COLLECTOR CURRENT (mA)
Figure 6. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOL TS)
Vin , INPUT VOLTAGE (VOLTS)
Figure 5. Output Current versus Input Voltage
1
0.1
0.01
0.001 020 4050
hFE , DC CURRENT GAIN (NORMALIZED)
1000
100
101 10 100
4
3
2
1
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
10
1
0.1
01020304050
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5211DW1T1
LESHAN RADIO COMPANY, LTD.
LMUN5211DW–7/10
LMUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5212DW1T1
IC, COLLECTOR CURRENT (mA)
Figure 7. V CE(sat) versus I C
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
IC,COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOL TS)
Vin , INPUT VOLTAGE (VOLTS)
Figure 10. Output Current versus Input oltage
10
1
0.1
0.01 020 4050
hFE , DC CURRENT GAIN (NORMALIZED)
1000
100
10 1 10 100
4
3
2
1
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
100
10
1
0.1
01020304050
LESHAN RADIO COMPANY, LTD.
LMUN5211DW–8/10
LMUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5213DW1T1
IC, COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
IC, COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOL TS)
Vin , INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input oltage
10
1
0.1
0.01 020 4050
hFE , DC CURRENT GAIN (NORMALIZED)
1000
100
101 10 100
1
0.8
0.6
0.4
0.2
001020304050
C ob CAPACITANCE (pF)
100
10
1
0.1
0.01
0.001012345678910
100
10
1
0.1 01020304050
LESHAN RADIO COMPANY, LTD.
LMUN5211DW–9/10
LMUN5211DW1T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS – LMUN5214DW1T1
IC, COLLECTOR CURRENT (mA)
Figure 17. V CE(sat) versus I C
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 19. Output Capacitance
IC,COLLECTOR CURRENT (mA)
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
Figure 18. DC Current Gain
V in , INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOL TS)
Vin , INPUT VOLTAGE (VOLTS)
Figure 20. Output Current versus Input oltage
1
0.1
0.01
0.001 020406080
hFE , DC CURRENT GAIN (NORMALIZED)
300
250
200
150
100
50
01 2 3 4 5101520405060708090100
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8 101520253035404550
C ob CAPACITANCE (pF)
100
10
1012345678910
10
1
0.1
01020304050
LESHAN RADIO COMPANY, LTD.
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A0.071 0.087 1.80 2.20
B0.045 0.053 1.15 1.35
C0.031 0.043 0.80 1.10
D0.004 0.012 0.10 0.30
G0.026 BSC 0.65 BSC
H--- 0.004 --- 0.10
J0.004 0.010 0.10 0.25
K0.004 0.012 0.10 0.30
N 0.008 REF 0.20 REF
S0.079 0.087 2.00 2.20
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
B
0.2 (0.008)
A
G
S
H
C
N
J
K
D
6PL
6 5 4
1 2 3
-
B
-
M M
0.5 mm (min)
0.4 mm (min)
0.65 mm 0.65 mm
1.9 mm
SC
-
88/SOT
-
363
LMUN5211DW1T1 Series
LMUN5211DW-10/10
