HN1D03F
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TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D03F
Ultra High Speed Switching Application
Built in anode common and cathode common.
Unit 1
Low forward voltage Q1, Q2: VF (3) = 0.90V (typ.)
Fast reverse re covery tim e Q1, Q2: trr = 1.6ns (typ.)
Small total capacitance Q1, Q2: CT = 0.9pF (typ.)
Unit 2
Low forward voltage Q3, Q4: VF (3) = 0.92V (typ.)
Fast reverse re covery tim e Q3, Q4: trr = 1.6ns (typ.)
Small total capacitance Q3, Q4: CT = 2.2pF (typ.)
Unit 1, Unit 2 Common Maxi mum Ratings (Ta = 25°
°°
°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300 (*) mA
Average forward current IO 100 (*) mA
Surge current (10ms) IFSM 2 (*) A
Power dissipation P 300 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg 55~125 °C
(*) This is the Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Maximum Ratings per diode is
75% of the single diode one.
Marking Pin Assignment
(Top View)
JEDEC
EIAJ SC-74
TOSHIBA
Weight: 0.015g
Unit: mm
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2001-06-07
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Fig.1 Reverse Recovery Time (trr) Test Circuit
Unit 1 Electrical Characteristics (Q1, Q2, Common) (Ta = 25°
°°
°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) I
F = 1mA 0.60
VF (2) I
F = 10mA 0.72
Forward voltage
VF (3) I
F = 100mA 0.90 1.20
V
IR (1) V
R = 30V 0.1
Reverse current
IR (2) V
R = 80V 0.5
µA
Total capacitance CT V
R = 0, f = 1MHz 0.9 3.0 pF
Reverse recovery time trr I
F = 10mA (fig.1) 1.6 4.0 ns
Unit 2 Electrical Characteristics (Q3, Q4, Common) (Ta = 25°
°°
°C)
Characteristic Symbol
Test
Circuit Test Condition Min Typ. Max Unit
VF (1) I
F = 1mA 0.61
VF (2) I
F = 10mA 0.74
Forward voltage
VF (3) I
F = 100mA 0.92 1.20
V
IR (1) V
R = 30V 0.1
Reverse current
IR (2) V
R = 80V 0.5
µA
Total capacitance CT V
R = 0, f = 1MHz 2.2 4.0 pF
Reverse recovery time trr I
F = 10mA (fig.1) 1.6 4.0 ns
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2001-06-07
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HN1D03F
2001-06-07
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000707EA
A
RESTRICTIONS ON PRODUCT USE