© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 9
1Publication Order Number:
BD241C/D
BD241C (NPN),
BD242B (PNP),
BD242C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications.
Features
•High Current Gain − Bandwidth Product
•Compact TO−220 AB Package
•Epoxy Meets UL94 V−0 @ 0.125 in
•These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎ
ÎÎÎ
ÎÎÎ
BD242B
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
BD241C
BD242C
ÎÎÎ
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎ
ÎÎÎ
80
ÎÎÎÎ
ÎÎÎÎ
100
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Collector−Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCES
ÎÎÎ
ÎÎÎ
90
ÎÎÎÎ
ÎÎÎÎ
115
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Emitter−Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Collector Current −Continuous
ÎÎÎÎ
ÎÎÎÎ
IC
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
3.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Collector Current − Peak
ÎÎÎÎ
ÎÎÎÎ
ICM
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
5.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Base Current
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
1.0
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Total Device Dissipation
@ TC= 25°C
Derate above 25°C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
40
0.32
ÎÎÎ
ÎÎÎ
ÎÎÎ
W
W/°C
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
Operating and Storage
Junction Temperature Range
ÎÎÎÎ
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
–65 to +150
ÎÎÎ
ÎÎÎ
°C
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ESD − Human Body Model
ÎÎÎÎ
ÎÎÎÎ
HBM
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
3B
ÎÎÎ
ÎÎÎ
V
ÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎ
ESD − Machine Model
ÎÎÎÎ
ÎÎÎÎ
MM
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
C
ÎÎÎ
ÎÎÎ
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Ambient
ÎÎÎÎ
ÎÎÎÎ
RqJA
62.5
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction−to−Case
ÎÎÎÎ
ÎÎÎÎ
RqJC
3.125
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping†
ORDERING INFORMATION
TO−220AB
CASE 221A−09
STYLE 1
3
1
POWER TRANSISTORS
COMPLEMENTARY
SILICON
3 AMP
80−100 VOLTS
40 WATTS
2
MARKING
DIAGRAM
BD24xx = Device Code
xx = 1C, 2B, or 2C
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
http://onsemi.com
AYWW
BD24xxG
BD241CG TO−220AB
(Pb−Free)
50 Units/Rail
BD242BG TO−220AB
(Pb−Free)
50 Units/Rail
BD242CG TO−220AB
(Pb−Free)
50 Units/Rail
4
1
BASE
EMITTER 3
COLLECTOR 2,4
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
BASE
EMITTER 3
COLLECTOR 2,4
COMPLEMENTARY
BD241C (NPN), BD242B (PNP), BD242C (PNP)
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
Min
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 30 mAdc, IB = 0) BD242B
BD241C, BD242C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCEO
80
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0) BD242B
(VCE = 60 Vdc, IB = 0) BD241C, BD242C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICEO
0.3
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0) BD242B
(VCE = 100 Vdc, VEB = 0) BD241C, BD242C
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ICES
200
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
IEBO
1.0
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 3.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hFE
25
10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 0.6 Adc)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
1.2
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 3.0 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
ÎÎÎÎ
VBE(on)
1.8
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
fT
3.0
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
hfe
20
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. fT = |hfe| • ftest.
40
30
20
10
00 20 40 60 80 100 120 140 160
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
PD, POWER DISSIPATION (WATTS)
BD241C (NPN), BD242B (PNP), BD242C (PNP)
http://onsemi.com
3
2.0
0.03
IC, COLLECTOR CURRENT (AMP)
t, TIME (s)μ
1.0
0.7
0.5
0.3
0.1
0.07
0.02 0.05 0.1 0.3 0.5 0.7 1.0 3.0
td @ VBE(off) = 2.0 V
IC/IB = 10
TJ = 25°C
tr @ VCC = 30 V
tr @ VCC = 10 V
0.07
0.03
0.05
Figure 2. Switching Time Equivalent Circuit Figure 3. Turn−On Time
APPROX
+ 11 V
TURN‐ON PULSE
Vin 0
t1
VEB(off)
APPROX - 9.0 V
TURN‐OFF PULSE
Vin
t3
t2
APPROX
+ 11 V
VCC
SCOPE
RK
Cjd%Ceb
- 4.0 V
t1 v 7.0 ns
100 t t2 t 500 ms
t3 t 15 ns
DUTY CYCLE [ 2.0%
Vin
RL
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500
ZqJC (t) = r(t) RqJC
RqJC = 3.125°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01 SINGLE PULSE
0.1
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS
)
SECOND BREAKDOWN
LIMITED @ TJ v 150°C
THERMAL LIMITATION @ TC = 25°C
BONDING WIRE LIMITED
CURVES APPLY BELOW
RATED VCEO
10
5.0
Figure 5. Active Region Safe Operating Area
IC, COLLECTOR CURRENT (AMP)
5.0
1.0
0.1 10 20 50 100
BD241C, BD242C
5.0 ms 100 ms
1.0 ms
0.2
2.0
0.5
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 150°C, TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
BD241C (NPN), BD242B (PNP), BD242C (PNP)
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4
3.0
0.03
Figure 6. Turn−Off Time
IC, COLLECTOR CURRENT (AMP)
tf @ VCC = 30 V
t, TIME (s)μ
2.0
1.0
0.5
0.3
0.2
0.1
0.05
0.03 0.05 0.07 0.1 0.2 0.5 1.0 2.0 3.0
tf @ VCC = 10 V
IB1 = IB2
IC/IB = 10
ts′ = ts - 1/8 tf
TJ = 25°C
ts′
0.3 0.7
0.07
0.7
300
0.1
Figure 7. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30 1.0 2.0 3.0 5.0 20 30 40100.2 0.3 0.5
CAPACITANCE (pF)
200
100
70
50
TJ = + 25°C
Ceb
Ccb
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
0.03
5.0
0.05 0.07 0.1 0.3 0.5 1.0 3.0
100
50
30
10
300
70
TJ = 150°C
25°C
-55°C
VCE = 2.0 V
0.7
7.0
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
Figure 9. Collector Saturation Region
2.0
1.0
IB, BASE CURRENT (mA)
02.0 5.0 10 20 50 100 200 500 1000
1.6
1.2
0.8
0.4
IC = 0.3 A
TJ = 25°C
1.0 A 3.0 A
hFE, DC CURRENT GAIN
1.4
0.003
IC, COLLECTOR CURRENT (AMPS)
0.01 0.020.03 0.1 0.2 0.5 1.0 2.0 3.0
0.8
0.6
0.4
0.2
0
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
Figure 10. “On” Voltages
+2.5
0.003
Figure 11. Temperature Coefficients
IC, COLLECTOR CURRENT (AMP)
0.01 0.02 0.05 0.1 0.2 0.3 1.0 2.0 3.0
V, TEMPERATURE COEFFICIENTS (mV/ C)°θ
+2.0
+1.5
+0.5
0
-0.5
-1.0
-1.5
-2.0
-2.5
qVB FOR VBE
*qVC FOR VCE(sat)
*APPLIES FOR IC/IB ≤5.0
TJ = - 65°C TO + 150°C
0.005 0.30.05
1.2
1.0
VBE @ VCE = 2.0 V
+1.0
0.50.005
BD241C (NPN), BD242B (PNP), BD242C (PNP)
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5
103
-0.4
Figure 12. Collector Cut−Off Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
10-1
, COLLECTOR CURRENT (A)μIC
10-2
10-3
-0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6
VCE = 30 V
TJ = 150°C
100°C
25°C
REVERSE FORWARD
ICES
107
Figure 13. Effects of Base−Emitter Resistance
TJ, JUNCTION TEMPERATURE (°C)
20 40 60 80 100 120 140 160
106
105
104
103
102
RBE, EXTERNAL BASE-EMITTER RESISTANCE (OH
M
VCE = 30 V
IC = 10 x ICES
IC ≈ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
IC = 2 x ICES
BD241C (NPN), BD242B (PNP), BD242C (PNP)
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6
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AG NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.405 9.66 10.28
C0.160 0.190 4.07 4.82
D0.025 0.036 0.64 0.91
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
−T−
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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