2N4221A N-Channel Silicon JFET General Purpose Amp, Switch TO72 Type Package Description: The 2N4221A is an N-Channel junction silicon field-effect transistor in a TO72 type package designed for general purpose amplifier and switching applications. Absolute Maximum Ratings: Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain-Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -30V Drain Current, ID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2mW/C Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit -30 - - V VGS= -15V, VDS = 0 - - -0.1 nA VGS= -15V, VDS = 0, TA = +150C - - -100 nA VGS(off) VDS = 15V, ID = 0.1nA - - -6 V VGS VDS = 15V, ID = 200A -1.0 - -5.0 V Zero-Gate-Voltage Drain Current IDSS VDS = 15V, VGS = 0, Note 1 2.0 - 6.0 mA Static Drain-Source On Resistance rDS(on) - 400 - OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage V(BR)GSS VDS = 0, IG = -10A IGSS ON Characteristics VDS = 0, VGS = 0 Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 2000 - 5000 mhos Small-Signal Characteristics Forward Transfer Admittance Common Source |yfs| VDS = 15V, VGS = 0, f = 1kHz, Note 1 Output Admittance Common Source |yos| VDS = 15V, VGS = 0, f = 1kHz - - 20 mhos Input Capacitance Ciss VDS = 15V, VGS = 0, f = 1kHz - 4.5 6.0 pF Reverse Transfer Capacitance Crss VDS = 15V, VGS = 0, f = 1kHz - 1.2 2.0 pF Common-Source Output Capacitance Cosp VDS = 15V, VGS = 0, f = 30MHz - 1.5 - pF VDS = 15V, VGS = 0, RS = 1M, f = 100Hz - - 2.5 dB Functional Characteristics Noise Figure NF Note 1. Pulse test: Pulse Width = 630ms, Duty Cycle = 10%. .220 (5.58) Dia .185 (4.7) Dia .190 (4.82) .030 (.762) .500 (12.7) Min D G S .018 (0.45) Dia Source Drain Gate 45 Case .040 (1.02)