© 2017 IXYS CORPORATION, All Rights Reserved DS100201B(8/17)
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTY02N120P
IXTP02N120P
VDSS = 1200V
ID25 = 0.2A
RDS(on)
75
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1200 V
VGS(th) VDS = VGS, ID = 100μA 2.0 4.0 V
IGSS VGS = 20V, VDS = 0V 50 nA
IDSS VDS = VDSS, VGS = 0V 1 A
TJ = 125C 25 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 75
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 1200 V
VDGR TJ= 25C to 150C, RGS = 1M1200 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 0.2 A
IDM TC= 25C, Pulse Width Limited by TJM 0.6 A
IATC= 25C 0.2 A
EAS TC= 25C40mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns
PDTC= 25C33W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-220 3.00 g
G = Gate D = Drain
S = Source Tab = Drain
GDS
TO-220 (IXTP)
D (Tab)
TO-252 (IXTY)
G
S
D (Tab)
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Laser Drivers
Igniters, RF Generators
Robotics and Servo Controls
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY02N120P
IXTP02N120P
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 0.2 A
ISM Repetitive, Pulse Width Limited by TJM 0.8 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 1.6 μs
IRM 3.5 A
QRM 2.8 μC
IF = 0.2A, -di/dt = 100A/μs,
VR = 100V
TO-252 AA Outline
1 - Gate
2,4 - Drain
3 - Source
L1
b2
e1
L4
E A
c2
H
A1
A2
L2
L
A
e c
0
e1 e1 e1 e1 e1
OPTIONAL 5.55MIN
1.25MIN
6.50MIN
2.28
6.40
BOTTOM
VIEW
2.85MIN
LAND PATTERN RECOMMENDATION
4
1 2 3
4
L3
b3
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 0.12 0.20 S
Ciss 104 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 8.6 pF
Crss 1.9 pF
td(on) 6 ns
tr 10 ns
td(off) 21 ns
tf 39 ns
Qg(on) 4.70 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 0.37 nC
Qgd 3.20 nC
RthJC 3.8 C/W
RthCS TO-220 0.50 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50 (External)
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY02N120P
IXTP02N120P
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
120
140
160
180
200
02468101214
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
7V
6V
5V
4V
3V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
8V
7V
5V
4V
6V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
7V
5V
4V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 100mA Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 200mA
I
D
= 100mA
Fig. 5. R
DS(on)
Normalized to I
D
= 100mA Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 100 200 300 400 500 600 700 800 900 1000
I
D
- MilliAmperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125oC
T
J
= 25oC
Fig. 6. Maximum Drain Current vs. Case Temperature
0
40
80
120
160
200
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- MilliAmperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY02N120P
IXTP02N120P
IXYS REF: T_02N120P(F2) 10-01-09
Fig. 7. Input Admittance
0
50
100
150
200
250
300
350
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- Volts
I
D
- MilliAmperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350
I
D
- MilliAmperes
g
f s
- MilliSiemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
100
200
300
400
500
600
700
800
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- MilliAmperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0.00.51.01.52.02.53.03.54.04.55.0
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 600V
I
D
= 100mA
I
G
= 1mA
Fig. 11. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W