ISSUED DATE :2006/01/23 REVISED DATE : GD1SS356 S U R F A C E M O U N T, B A N D S W I T C H I N G D I O D E V O LT A G E 3 5 V, C U R R E N T 0 . 1 A Description The GD1SS356 is designed for high frequency switching application. Features High reliability Small mode type Package Dimensions REF. A A1 A2 D E HE Millimeter Min. Max. 0.85 1.05 0 0.10 0.80 1.00 1.15 1.45 1.60 1.80 2.30 2.70 REF. L b c Q1 Millimeter Min. Max. 0.20 0.25 0.10 0.40 0.40 0.18 0.15 BSC. Absolute Maximum Ratings at Ta = 25 Parameter Symbol Ratings Unit VR 35 V mA Reverse Voltage(DC) Forward Current(DC) IF 100 Junction Temperature Tj +125 Storage Temperature Tstg -55 ~ +150 PD 225 Total Power Dissipation mW Electrical Characteristics at Ta = 25 Parameter Symbol Min. Typ. Max. Unit Test Conditions Reverse Breakdown VR 35 - - V IR=10uA Reverse Current(DC) IR - - 10 nA VR=25V Reverse Voltage(DC) VF - - 1 V IF=10mA Diode Capacitance CD - 0.9 1.2 pF VR=6, f=1MHz Forward dynamic resistance rf - 0.65 0.9 IF=2mA, f=100MHz Note 1: Rated input/output frequency: 100MHz GD1SS356 Page: 1/2 ISSUED DATE :2006/01/23 REVISED DATE : Characteristics Curve IF - VF CD - VR IR - T a r f - IF rf - f Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GD1SS356 Page: 2/2