NTE5562, NTE5564, NTE5566
Silicon Controlled Rectifiers (SCR’s)
Description:
The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud
TO–48 type package designed for industrial and consumer applications such as power supplies, bat-
tery chargers, temperature, motor, light and welder controls.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM
NTE5562 200. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5564 400V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE5566 600V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RMS On–State Current (TC = +75°C), IT(RMS) 35A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Surge (Non–Repetitive) On–State Current, ITSM 300A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Trigger Current (3µs Max), IGTM 20. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Gate–Power Dissipation (IGT ≤ for 3µs Max), PGM 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Average Gate Power Dissipation, PG(AV) 20W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, Toper –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –40° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Typical Thermal Resistance, Junction–to–Case, RthJC 1.6/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter Symbol Test Conditions Min Typ Max Unit
Peak Off–State Current IDRM,
IRRM TJ = +100°C, Gate Open, VDRM &VRRM – – 2.0 mA
Maximum On–State Voltage (Peak) VTM TC = +25°C – – 1.6 V
DC Holding Current IHO TC = +25°C, Gate Open – – 50 mA
DC Gate Trigger Current IGT Anode Voltage = 12Vdc, RL = 30Ω,
TC =+ 25°C– – 30 mA
DC Gate Controlled Turn–On Time TGT IGT = 150mA , tD+tR–2.5 –µs
Critical Rate of Rise of Off–State Voltage Critical
dv/dt TC = +100°C, Gate Open –100 –V/µs
.562
(14.28)
Max
1.260
(32.0)
Max
.445
(11.3)
Max
.595
(15.1)
Max
Cathode
Anode
Gate
1/4–28 UNF–2A
Isolated Stud
