ES1A thru ES1M 1.0 Amp. Super Fast Surface Mount Rectifiers Voltage Range 50 to 1000 Volts Forward Current 1.0 Ampere SYASEMI SEMICONDUCTOR, Features @ For surface mounted application @ Low profile package @ Builtin strain relief, @ Ideal for automated placement @ Easy pick and place @ Superfast recovery time for high efficiency @ Glass passivated chip junction @ High temperature soldering: DO-214AC (SMA) 250C/10 seconds at terminals 6441.83) - @ Plastic material used carries Underwriters Laboratory _ b Classification 94-0 ' | ses 1 . -181(4.60) Mechanical Data 787 (4.00) @ Cases: Molded plastic @ Terminals: Solder plated @ Polarity: Indicated by cathode band anal se @ Weight: 0.002 ounce, 0.064 gram O75(1.90) | 0121.31 ! f 005, 15) bss } -GO8.20) | 004(-10) 0504180) OS1(0.40) 2055.20) 1854.80) t Maximum Ratings and Electrical Characteristics Ratings at 2c ambient temperature unless cthensise specified. Single phase, half waye, G@OHz, resistive or indudive bad. For capadtive load, derate current by 209% Dimensions in inches and (millimeters) ES ES Es ES ES ES ES Es ES - Eeraiete! Symbols | aa | 4B 1c 1D 1F 1G 1 aK | am | Unis Maximum repetitive peak reverse voltage Misi 5 400 160 20g 300 400 goo B00 qooo Volts Mlasiroum RMS voltage Wie 36 Fo 105 140 #10 280 420 56d Fo Volts Mlasiroum CC Bleeking voltage Vow 50 100 160 20) 300 400 6od aod 1a08 Valts Maximum average fonyard rectified current See Fig. 1 Kay 1.0 Ap Peak fonvard sume current, 8.3rmes single half sine-wave superinpe sed on rated load esi 30.0 Amps HEDEC Method) Masimurn instantaneous torvand voltage @ 1.04, Ve 0.96 14 VW Volts Masimum OG reverse current @T,=25C 6.0 wh, at rated OC blocking voltage i T,=100C k 100 uA Maximum reverse recovery time (Mote 13 1 36 ns Typieal junction capacitance (Mete 2) C, 40 8 pF Typical thennal resistance (Mote ah Foun 85 oly Ra 36 Operating tarnperature range Tj -65 to +760 aS Storage temperature range Teas -66 te +760) i Notes: = 1. Reverse Recovery Test Conditions: |=0.54, .=1.04, .=0.254 2. Measured at1 MHz and Applied =4.0 Volts 3. P.G.B. Mountedon o.22 0.2" (5.0% 5.0mm) Copper Pad Area.RATINGS AND CHARACTERISTIC CURVES ES1A thru ES1M INSTANTANEOUS FORWARD CURRENT, (A) AVERAGE FORWARD CURRENT. (A) JUNCTION CAPACITANCE (pF) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 12 1.0 RESISTIVE OR O86 INDUCTIVE LOAD 0.2%0.2(5.0%5,0mm) N COPPER PAD AREAS \ os a \ Es iN 2 Lt | Bo oO 4100 110 120 130 140 180 LEAD TEMPERATURE. (C) FIG.3- TYPICAL INSTANTANEOUS O41 om FORWARD CHARACTERISTICS Tie25C PULSE WIDTH-300uS 1% DUTY CYCLE o4 06 OB 10 12 14 41.6 FORWARD VOLTAGE. (v7) 16 FIG.5- TYPICAL JUNCTION CAPACITANCE Oo 4 10 REVERSE VOLTAGE. (V) 100: FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT < 30 T T TTT E 8.3ms Singlo Half Sino Wave 2 (JEDEC Mothod) et TL=120C Ww 25 + & ~] a a, o = w =20 J = as. a 5 hs. a rf e el | 2 1 = hi 5.0 { 10 400 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL REVERSE CHARACTERISTICS 1000 = S o = So INSTANTANEOUS REVERSE CURRENT, A) a a 0.01 a 20 40 60 80 100 20 6140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)