DATA SHEET
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Document No. PU10008EJ02V0DS (2nd edition)
Date Published March 2003 CP(K)
NPN SILICON RF TRANSISTO R
NE664M04 / 2SC5754
NPN SILICON RF TRANSISTOR FOR
MEDIUM OUTPUT POWER AMPLIFICATION (0.4 W)
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
The mark •
••
• shows major revised poi nts.
FEATURES
• Ideal for 460 MHz to 2.4 GHz medium output power amplification
•P
O (1 dB) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm
• High collector efficiency:
η
C = 60%
• UHS0-HV technology (fT = 25 GHz) adopted
• High reliability through use of gold electrodes
• Flat-lead 4-pin thin-type super minimold (M04) package
ORDERING INFORMATION
Part Number Quantity Supplyi ng Form
NE664M04-A
2SC5754-A 50 pcs (Non reel) • 8 mm wide embossed taping
NE664M04-T2-A
2SC5754-T2-A 3 kpcs / reel • Pin 1 (Em i tter), Pi n 2 (Col l ector) fac e t he perforation si de of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
JEITA
Part No.
PHASE-OUT
Data Sheet PU10008EJ02V0DS
2
NE664M04 / 2SC5754
ABSOLUTE MAXIMUM RATINGS (TA = +25°
°°
°C)
Parameter SymbolRatingsUnit
Collector to Base Voltage VCBO 13 V
Collector to Emitter Voltage VCEO 5.0 V
Emitter to Base Voltage VEBO 1.5 V
ItnerruC rotcelloC C500 mA
Total Power Dissipation Ptot Note 735 mW
TerutarepmeT noitcnuJ j150°C
TerutarepmeT egarotS stg −65 to +150°C
Note Mounted on 38 × 38 mm, t = 0.4 mm polyimide PCB
THERMAL RESISTANCE
Parameter Symbol Test ConditionsRatingsUnit
Junction to Ambient Resistance Rth j-a1 Mounted on 38 × 38 mm, t = 0.4 mm
polyimide PCB
170°C/W
Rth j-a2 Stand alone device in free air 570°C/W
PHASE-OUT
Data Sheet PU10008EJ02V0DS 3
ELECTRICAL CHARACTERISTICS (TA = +25°
°°
°C)
Parameter Symbol Test Conditions MIN. TYP. MAX.Unit
DC Characteristics
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 1 000 nA
Emitter Cut-off Current IEBO VBE = 1 V, IC = 0 mA − − 1 000 nA
DC Current Gain hFE Note 1 VCE = 3 V, IC = 100 mA 40 60 100−
RF Characteristics
Gain Bandwidth Product fTVCE = 3 V, IC = 100 mA, f = 0.5 GHz 16 20 −GHz
Insertion Power Gain ⏐S21e⏐2VCE = 3 V, IC = 100 mA, f = 2 GHz 5.0 6.5 −dB
Reverse Transfer Capacitance Cre Note 2 VCB = 3 V, IE = 0 mA, f = 1 MHz −1.0 1.5 pF
Maximum Available Power Gain MAGNote 3 VCE = 3 V, IC = 100 mA, f = 2 GHz −12.0 −dB
GniaG raeniL LVCE = 3.6 V, ICq = 20 mA, f = 1.8 GHz,
Pin = 0 dBm, 1/2 Duty −12.0 −dB
Gain 1 dB Compression Output Power PO (1 dB) VCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty −26.0 −dBm
Collector Efficiency
η
CVCE = 3.6 V, ICq = 4 mA, f = 1.8 GHz,
Pin = 15 dBm, 1/2 Duty −60 −%
Notes 1.Pulse measurement: PW ≤ 350
μ
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
3. MAG =
hFE CLASSIFICATION
Rank FB
Marking R57
hFE Value 40 to 100
(K – √
√√
√ (K2 – 1) )
S21
S12
NE664M04 / 2SC5754
PHASE-OUT
Data Sheet PU10008EJ02V0DS
4
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°
°°
°C)
f = 1 MHz
Reverse Transfer Capacitance C
re
(pF)
Collector to Base Voltage V
CB
(V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
2.0
1.5
1.0
0.5
0 1 3 4 52
1 000
100
10 10 000 10011
DC Current Gain h
FE
Collector Current I
C
(mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
V
CE
= 3 V
Collector Current I
C
(mA)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
100
10
0.1
0.01
1
0.001 0.70.6 0.19.08.05.0
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
450
250
200
150
400
350
300
100
50
0 2 541 63
I
B
= 0.5 mA
1 mA
2 mA
3 mA
4 mA
5 mA
6 mA
7 mA
I
B
: 0.5 mA step
1 000
800
600
400
735
205
200
0 25 50 75 100 125 150
Total Power Dissipation P
tot
(mW)
Ambient Temperature T
A
(˚C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Polyimide PCB
(38 × 38 mm, t = 0.4 mm)
Stand alone device
in free air
NE664M04 / 2SC5754
PHASE-OUT
Data Sheet PU10008EJ02V0DS 5
V
CE
= 3 V
I
C
= 100 mA
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
35
30
25
20
15
10
5
0
0.1 1 10
MAG
MSG
|S
21e
|
2
V
CE
= 3 V
f = 0.5 GHz
Gain Bandwidth Product f
T
(GHz)
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
25
20
10
15
5
010 100 000 11
V
CE
= 3 V
f = 1 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
01 10 100 1 000
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 2 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
01 10 100 1 000
MAGMSG
|S
21e
|
2
V
CE
= 3 V
f = 2.5 GHz
Collector Current I
C
(mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
20
15
10
5
01 10 100 1 000
MAGMSG
|S
21e
|
2
NE664M04 / 2SC5754
PHASE-OUT
Data Sheet PU10008EJ02V0DS
6
V
CE
= 3.2 V, f = 0.9 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–15 0–5–10 5 10 15
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.2 V, f = 2.4 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–5 1050 15 20 25
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
Remark The graphs indicate nominal characteristics.
NE664M04 / 2SC5754
PHASE-OUT
Data Sheet PU10008EJ02V0DS 7
POWER SUPPLY IMPEDANCE, LOAD IMPEDANCE (Recommended value)
Frequency
f (GHz)
Collector to Emitter Voltage
VCE (V)
Supply Impedance
ZS (Ω)
Load Impedance
ZL (Ω)
4.86.3 ot 8.29.0 − 5.2 j 15.1 − 4.3 j
3.66.3 ot 8.28.1 − 16.4 j 15.8 − 6.9 j
9.56.3 ot 8.24.2 − 22.1 j 15.2 − 17.9 j
GND
GND
RF output line
RF input line B
E
E
C
Z
S
Z
L
Z
S
Tr.
Z
L
f = 0.9 GHz
Z
S
Z
L
f = 1.8 GHz
Z
S
Z
L
f = 2.4 GHz
Z
S
Z
L
NE664M04 / 2SC5754
PHASE-OUT
Data Sheet PU10008EJ02V0DS
8
APPLICATION EXAMPLE (Low-cost PA solution)
Bluetooth Power Class 1
f = 2.4 GHz
mBd 22mBd 31mBd 0
NE663M04
2SC5509
NE664M04
2SC5754
T80
R57
SS Cordless Phone
f = 2.4 GHz
mBd 62mBd 02
R57
DCS1800 (GSM1800) Cellular Phone
f = 1.8 GHz
mBd 53mBd 52mBd 61mBd 5
NE678M04
2SC5753
NE5520379A
(MOS FET)
A 3
9Z001
R55
R57
Cordless Phone
f = 0.9 GHz
mBd 52mBd 9mBd 3–
NE680M03
2SC5434
(3-pin TUSMM)
R57
T H
NE664M04 / 2SC5754
NE664M04
2SC5754
NE664M04
2SC5754
NE664M04
2SC5754
PHASE-OUT
Data Sheet PU10008EJ02V0DS 9
EVALUATION CIRCUIT EXAMPLE : 1.8 GHz PA EVALUATION BOARD
PCB Pattern and Element Layout
C2
C1
C3
C5
C6
C4
RF in RF out
V
B
V
C
4LS1LS
SL2
Tr. (NE664M04 / 2SC5754)
SL3 SL5
Remarks 1. 38 × 38 mm, t = 0.4 mm,
ε
r
= 4.55 double-sided
copper-clad polyimide board
2. Back side : GND pattern
3. Solder plating on pattern
4. : Through holes
Equivalent Circuit
V
B
V
C
Tr. C5
C4C2
C3
RF out
RF in
SL5 C6
C1
SL3
SL2
SL4
SL1
Parts List
noitacifissalCeziSeulaVstraP
roticapac pihc cimarec reyalpitluMFp 816C ,1C
roticapac pihc cimarec reyalpitluMFp 003 32C
roticapac pihc cimarec reyalpitluMFp 33C
roticapac pihc cimarec reyalpitluMFp 514C
roticapac pihc cimarec reyalpitluMFp 5.15C
enil pirtSmm 02.0 = w4LS ,1LS
enil pirtSmm 5.2 = l ,mm 67.0 = w2LS
enil pirtSmm 5 = l ,mm 67.0 = w3LS
enil pirtSmm 5.1 = l ,mm 67.0 = w5LS
NE664M04 / 2SC5754
PHASE-OUT
Data Sheet PU10008EJ02V0DS
10
EXAMPLE OF CHARACTERISTICS FOR 1.8 GHz PA EVALUATION BOARD
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.2 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 4 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
V
CE
= 3.6 V, f = 1.8 GHz
I
Cq
= 20 mA, 1/2 Duty
30
25
20
15
10
5
0
300
50
100
150
250
200
0
–10 50–5 10 15 20
Input Power P
in
(dBm)
OUTPUT POWER, POWER GAIN,
COLLECTOR CURRENT, COLLECTOR
EFFICIENCY vs. INPUT POWER
Output Power P
out
(dBm), Power Gain G
P
(dB)
Collector Current I
C
(mA), Collector Efficiency
C
(%)
η
G
P
P
out
I
C
C
η
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
NE664M04 / 2SC5754
PHASE-OUT
Data Sheet PU10008EJ02V0DS 11
PACKAGE DIMENSIONS
FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm)
PIN CONNECTIONS
1. Emitter
2. Collector
3. Emitter
4. Base
0.59 ± 0.05
0.11
+0.1
–0.05
0.600.65
0.650.65
1.30
1.25
2.0 ± 0.1
1 2
4 3
1.25 ± 0.1
2.05 ± 0.1
0.30
+0.1
–0.05
0.40
+0.1
–0.05
0.30
+0.1
–0.05
0.30
+0.1
–0.05
R57
NE664M04 / 2SC5754
PHASE-OUT
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PHASE-OUT