AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features l l l l l l l l l l AUIRLL014N Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified* D G S V(BR)DSS 55V RDS(on) max. 0.14 ID 2.0A D S D Description G Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base Part Number Package Type AUIRLL014N SOT-223 SOT-223 AUIRLL014N G D S Gate Drain Source Standard Pack Form Quantity Tube 95 Tape and Reel 2500 Orderable Part Number AUIRLL014N AUIRLL014NTR Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Parameter ID @ TA = 25C ID @ TA = 25C Continuous Drain Current, VGS @ 10V g ID @ TA = 70C Continuous Drain Current, VGS @ 10V Pulsed Drain Current IDM Max. Continuous Drain Current, VGS @ 10V h c Units 2.8 2.0 g 1.6 A 16 Power Dissipation (PCB Mount) 2.1 PD @TA = 25C h Power Dissipation (PCB Mount) g VGS Linear Derating Factor (PCB Mount) Gate-to-Source Voltage 1.0 8.3 16 mW/C V EAS Single Pulse Avalanche Energy (Thermally Limited) IAR Avalanche Current PD @TA = 25C c EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range g d cg W 32 mJ 2.0 A 0.1 mJ -55 to + 150 C Thermal Resistance Parameter g Junction-to-Ambient (PCB mount, steady state) h RJA Junction-to-Ambient (PCB mount, steady state) RJA Typ. Max. Units 90 120 C/W 50 60 HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ 1 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 25, 2014 AUIRLL014N Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)DSS V(BR)DSS/TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current gfs IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage 55 --- --- --- --- 1.0 2.3 --- --- --- --- --- 0.015 --- --- --- --- --- --- --- --- --- --- --- 0.14 0.20 0.28 2.0 --- 25 250 100 -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA VGS = 10V, ID = 2.0A VGS = 5.0V, ID = 1.2A VGS = 4.0V, ID = 1.0A V VDS = VGS, ID = 250A S VDS = 25V, ID = 1.0A A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, TJ = 150C nA VGS = 16V VGS = -16V f f f Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- 9.5 1.1 3.0 5.1 4.9 14 2.9 230 66 30 14 1.7 4.4 --- --- --- --- --- --- --- nC ns Conditions ID = 2.0A VDS = 44V VGS = 10V, See Fig. 6 and 9 VDD = 28V ID = 2.0A RG = 6.0 RD = 14, See Fig. 10 VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 f f pF Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 1.3 ISM (Body Diode) Pulsed Source Current --- --- 16 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 41 73 1.0 61 110 c Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11) VDD = 25V, starting TJ = 25C, L = 4.0mH RG = 25, IAS = 4.0A. (See Figure 12) ISD 2.0A, di/dt 170A/s, VDD V(BR)DSS, TJ 150C . 2 Conditions MOSFET symbol A V ns nC showing the integral reverse p-n junction diode. TJ = 25C, IS = 2.0A, VGS = 0V TJ = 25C, IF = 2.0A di/dt = 100A/s f f Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Pulse width 300s; duty cycle 2%. When mounted on FR-4 board using minimum recommended footprint. When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 25, 2014 AUIRLL014N 100 100 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 10 3.0V 1 0.1 VGS 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP I D, Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 20s PULSE WIDTH TJ = 25C A 1 10 10 3.0V 20s PULSE WIDTH TJ = 150C A 1 100 0.1 1 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics, 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25C TJ = 150C V DS = 25V 20s PULSE WIDTH 1 3.0 4.0 5.0 6.0 A 7.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 100 Fig 2. Typical Output Characteristics, 100 10 10 V DS, Drain-to-Source Voltage (V) www.irf.com (c) 2014 International Rectifier I D = 2.0A 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 80 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback A 100 120 140 160 March 25, 2014 AUIRLL014N Ciss 300 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS , Gate-to-Source Voltage (V) C, Capacitance (pF) 400 I D = 2.0A V DS = 44V V DS = 28V 16 12 200 Coss 100 Crss 0 1 10 100 8 4 FOR TEST CIRCUIT SEE FIGURE 9 0 A 0 VDS , Drain-to-Source Voltage (V) 6 9 12 A 15 Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 3 10 TJ = 150C TJ = 25C 1 10s 10 100s 1ms 1 10ms VGS = 0V 0.1 0.4 0.6 0.8 1.0 1.2 1.4 A 1.6 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com (c) 2014 International Rectifier TA = 25C TJ = 150C Single Pulse 0.1 1 A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback March 25, 2014 AUIRLL014N QG 10V RD V DS VGS QGS QGD D.U.T. RG + - VDD VG 10V Charge Pulse Width 1 s Duty Factor 0.1 % Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 90% 50K .2F 12V .3F D.U.T. + V - DS 10% VGS VGS td(on) 3mA IG tr t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (ZthJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 PDM 0.02 t 1 t 0.01 1 Notes: 1. Duty factor D = t SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 1 /t 2 2 2. Peak TJ = PDM x Z thJA + T A 0.01 0.1 1 10 100 A 1000 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 25, 2014 15V L VDS D.U.T RG IAS 10V tp DRIVER + V - DD A 0.01 Fig 12a. Unclamped Inductive Test Circuit EAS , Single Pulse Avalanche Energy (mJ) AUIRLL014N 80 TOP BOTTOM 60 40 20 0 VDD = 25V 25 V(BR)DSS ID 1.8A 3.2A 4.0A 50 75 100 125 Starting TJ , Junction Temperature (C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback A 150 March 25, 2014 AUIRLL014N Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + + * * * * RG Driver Gate Drive P.W. - dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= VDD P.W. Period * VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 13. For N-Channel HEXFETS 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 25, 2014 AUIRLL014N SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information LL014N Date Code Y= Year WW= Work Week A= Automotive, Lead Free Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 25, 2014 AUIRLL014N SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 2.05 (.080) 1.95 (.077) TR 4.10 (.161) 3.90 (.154) 0.35 (.013) 0.25 (.010) 1.85 (.072) 1.65 (.065) 7.55 (.297) 7.45 (.294) 16.30 (.641) 15.70 (.619) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 2.30 (.090) 2.10 (.083) 7.10 (.279) 6.90 (.272) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 50.00 (1.969) MIN. 18.40 (.724) MAX. 14.40 (.566) 12.40 (.488) 4 3 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 25, 2014 AUIRLL014N Qualification Information Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Qualification Level Moisture Sensitivity Level SOT-223 Machine Model MSL1 Class M1A (+/- 50V) AEC-Q101-002 Human Body Model ESD Class H0 (+/- 250V) AEC-Q101-001 Charged Device Model Class C5 (+/- 1125V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report. Highest passsing voltage. 10 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 25, 2014 AUIRLL014N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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For technical support, please contact IRs Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245 Tel: (310) 252-7105 11 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 25, 2014 AUIRLL014N Revision History Date 3/25/2014 12 Comments * Added "Logic Level Gate Drive" bullet in the features section on page 1 * Updated part marking on page 8 * Updated data sheet with new IR corporate template www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback March 25, 2014 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: AUIRLL014N