HEXFET® Power MOSFET
Features
lAdvanced Planar Technology
lLow On-Resistance
lLogic Level Gate Drive
lDynamic dv/dt Rating
l150°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lRepetitive Avalanche Allowed up to Tjmax
lLead-Free, RoHS Compliant
lAutomotive Qualified*
Description
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
GDS
Gate Drain Source
S
D
G
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
V
(BR)DSS
55V
R
DS(on)
max. 0.14Ω
I
D
2.0A
Parameter
Units
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
h
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V
g
I
D
@ T
A
= 70°C Continuous Drain Current, V
GS
@ 10V
g
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25°C Power Dissipation (PCB Mount)
h
P
D
@T
A
= 25°C Power Dissipation (PCB Mount)
g
Linear Derating Factor (PCB Mount)
g
mW/°C
V
GS
Gate-to-Source Voltage V
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
d
mJ
I
AR
Avalanche Current
c
A
E
AR
Repetitive Avalanche Energy
cg
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
θJA
Junction-to-Ambient (PCB mount, steady state)
g
90 120 °C/W
R
θJA
Junction-to-Ambient (PCB mount, steady state)
h
50 60
°C
W
-55 to + 150
1.0
8.3
± 16
Max.
2.8
1.6
16
2.0
2.1
0.1
32
2.0
AUIRLL014N
AUTOMOTIVE GRADE
SOT-223
AUIRLL014N
D
G
D
S
Form
Quantity
Tube
95
AUIRLL014N
Tape and Reel
2500
AUIRLL014NTR
Base Part Number Package Type
Standard Pack
Orderable Part Number
AUIRLL014N SOT-223
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 25, 2014
2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 25, 2014
AUIRLL014N
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
VDD = 25V, starting TJ = 25°C, L = 4.0mH
RG = 25Ω, IAS = 4.0A. (See Figure 12)
ISD ≤ 2.0A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C .
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on FR-4 board using minimum recommended
footprint.
When mounted on 1 inch square copper board, for comparison
with other SMD devices.
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55
–––
–––
V
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
–––
0.015
–––
V/°C
–––
–––
0.14
R
DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.20
Ω
–––
–––
0.28
V
GS(th)
Gate Threshold Voltage
1.0
–––
2.0
V
gfs
Forward Transconductance
2.3
–––
–––
S
I
DSS
Drain-to-Source Leakage Current
–––
–––
25
μA
–––
–––
250
I
GSS
Gate-to-Source Forward Leakage
–––
–––
100
nA
Gate-to-Source Reverse Leakage
–––
–––
-100
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Q
g
Total Gate Charge
–––
9.5
14
Q
gs
Gate-to-Source Charge
–––
1.1
1.7
nC
Q
gd
Gate-to-Drain ("Miller") Charge
–––
3.0
4.4
t
d(on)
Turn-On Delay Time
–––
5.1
–––
t
r
Rise Time
–––
4.9
–––
ns
t
d(off)
Turn-Off Delay Time
–––
14
–––
t
f
Fall Time
–––
2.9
–––
C
iss
Input Capacitance
–––
230
–––
C
oss
Output Capacitance
–––
66
–––
pF
C
rss
Reverse Transfer Capacitance
–––
30
–––
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
–––
–––
1.3
(Body Diode) A
I
SM
Pulsed Source Current
–––
–––
16
(Body Diode)
c
V
SD
Diode Forward Voltage
–––
–––
1.0
V
t
rr
Reverse Recovery Time
–––
41
61
ns
Q
rr
Reverse Recovery Charge
–––
73
110
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 5.0V, I
D
= 1.2A
f
V
GS
= 4.0V, I
D
= 1.0A
f
V
DS
= 25V, I
D
= 1.0A
I
D
= 2.0A
V
DS
= 44V
V
GS
= 16V
V
GS
= -16V
V
GS
= 10V, See Fig. 6 and 9
f
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
di/dt = 100A/μs
f
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 2.0A
f
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
MOSFET symbol
V
DD
= 28V
T
J
= 25°C, I
F
= 2.0A
Conditions
I
D
= 2.0A
R
G
= 6.0
Ω
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
f
showing the
integral reverse
p-n junction diode.
Conditions
R
D
= 14
Ω,
See Fig. 10
f
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AUIRLL014N
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics, Fig 2. Typical Output Characteristics,
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25°C
A
J
DS
V , Drain-to-Source Voltage (V)
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
D
I , Drain-to-Source Current (A)
1
10
100
0.1 1 10 100
A
DS
V , Drain-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
20μs PULSE WIDTH
T = 150°C
J
3.0V
VGS
TOP 15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
1
10
100
3.0 4.0 5.0 6.0 7.0
T = 25°C
T = 150°C
J
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
A
V = 25V
20μs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 2.0A
D
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AUIRLL014N
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
100
200
300
400
1 10 100
C, Capacitance (pF)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
0
4
8
12
16
20
0 3 6 9 12 15
Q , Total Gate Charge (nC)
G
V , Gate-to-Source Voltage (V)
GS
A
FOR TEST CIRCUIT
SEE FIGURE 9
I = 2.0A
V = 44V
V = 28V
D
DS
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4 1.6
T = 25°C
T = 150°C
J
J
V = 0V
GS
V , Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
A
0.1
1
10
100
1 10 100
V , Drain-to-Source Voltage (V)
DS
I , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
D
DS(on)
T = 25°C
T = 150°C
Single Pulse
10μs
100μs
1ms
10ms
A
A
J
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 25, 2014
AUIRLL014N
Q
G
Q
GS
Q
GD
V
G
Charge
+
-
VDS
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
VDD
RG
D.U.T.
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3μF
50KΩ
.2μF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VDS
90%
10%
VGS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
10V
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t , Rectangular Pulse Duration (sec)
1
D = 0.50
0.01
0.02
0.05
0.10
0.20
SINGLE PULSE
(THERMAL RESPONSE)
A
Thermal Response (Z )
thJA
P
t
2
1
t
DM
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
12
J
DM thJA
A
6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 25, 2014
AUIRLL014N
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
tp
V
(BR)DSS
I
AS
0
20
40
60
80
25 50 75 100 125 150
J
E , Single Pulse Avalanche Energy (mJ)
AS
A
Starting T , Junction Temperature (°C)
V = 25V
I
TOP 1.8A
3.2A
BOTTOM 4.0A
DD
D
Fig 12a. Unclamped Inductive Test Circuit
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
10V
7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 25, 2014
AUIRLL014N
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P. W .
Period
+
-
+
+
+
-
-
-
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
Fig 13. For N-Channel HEXFETS
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AUIRLL014N
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
LL014N
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 25, 2014
AUIRLL014N
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154) 1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
12.10 (.475)
11.90 (.469)
7.10 (.279)
6.90 (.272)
1.60 (.062)
1.50 (.059)
TYP.
7.55 (.297)
7.45 (.294)
7.60 (.299)
7.40 (.292)
2.30 (.090)
2.10 (.083)
16.30 (.641)
15.70 (.619)
0.35 (.013)
0.25 (.010)
FEED DIRECTION
TR
13.20 (.519)
12.80 (.504)
50.00 (1.969)
MIN.
330.00
(13.000)
MAX.
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
3
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
15.40 (.607)
11.90 (.469)
18.40 (.724)
MAX.
14.40 (.566)
12.40 (.488)
4
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback March 25, 2014
AUIRLL014N
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passsing voltage.
Qualification Information
†
SOT-223 MSL1
RoHS Compliant Yes
ESD
Machine Model Class M1A (+/- 50V)
†††
AEC-Q101-002
Human Body Model Class H0 (+/- 250V)
†††
AEC-Q101-001
Charged Device Model Class C5 (+/- 1125V)
†††
AEC-Q101-005
Qualification Level
Automotive
(per AEC-Q101)
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Moisture Sensitivity Level
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AUIRLL014N
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsid-
iaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other
changes to its products and services at any time and to discontinue any product or services without notice.
Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for
their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
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Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that
product or service voids all express and any implied warranties for the associated IR product or service and
is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application in
which the failure of the IR product could create a situation where personal injury or death may occur. Should
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Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by
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IR products are neither designed nor intended for use in automotive applications or environments unless the
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
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