TSM3446
20V N-Channel MOSFET
1/6
Version: D12
SOT
-
26
Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch
Ordering Information
Part No. Package Packing
TSM3446CX6 RF SOT-26 3Kpcs / 7” Reel
TSM3446CX6 RFG
SOT-26 3Kpcs / 7” Reel
Note: “G” denote for Halogen Free Product
Absolute Maximum Rating
(Ta = 25
o
C unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage V
DS
20 V
Gate-Source Voltage V
GS
±12 V
Continuous Drain Current, V
GS
@4.5V. I
D
5.3 A
Pulsed Drain Current, V
GS
@4.5V I
DM
20 A
Continuous Source Current (Diode Conduction)
a,b
I
S
1.7 A
Maximum Power Dissipation Ta = 25
o
C P
D
2.0 W
Ta = 70
o
C 1.3
Operating Junction Temperature T
J
+150
o
C
Operating Junction and Storage Temperature Range T
J
, T
STG
-55 to +150
o
C
Thermal Performance
Parameter Symbol Limit Unit
Junction to Case Thermal Resistance RӨ
JC
30
o
C/W
Junction to Ambient Thermal Resistance (PCB mounted) RӨ
JA
80
o
C/W
Notes:
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(mΩ) I
(A)
20 33 @ V
GS
= 4.5V 5.3
40 @ V
GS
= 2.5V 4.4
Pin
Definition
:
1. Drain 6. Drain
2. Drain 5, Drain
3. Gate 4. Source
Block Diagram
N-Channel MOSFET
TSM3446
20V N-Channel MOSFET
2/6
Version: D12
Electrical Specifications
Parameter Conditions Symbol
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage V
GS
= 0V, I
D
= 250uA BV
DSS
20 -- -- V
Gate Threshold Voltage V
DS
= V
GS
, I
D
= 250uA V
GS(TH)
0.5 0.7 1.0 V
Gate Body Leakage V
GS
= ±10V, V
DS
= 0V I
GSS
-- -- ±100 nA
Zero Gate Voltage Drain Current V
DS
= 16, V
GS
= 0V I
DSS
-- -- 1.0 uA
Drain-Source On-State Resistance V
GS
= 4.5V, I
D
= 5.3A R
DS(ON)
-- 27 33 mΩ
V
GS
= 2.5V, I
D
= 4.4A -- 33 40
Forward Transconductance V
DS
= 10V, I
D
= 5.3A g
fs
-- 20 -- S
Diode Forward Voltage I
S
= 1A, V
GS
= 0V V
SD
-- 0.7 1.3 V
Dynamic
b
Total Gate Charge V
DS
= 10V, I
D
= 5.3A,
V
GS
= 4.5V
Q
g
-- 12.5 --
nC
Gate-Source Charge Q
gs
-- 0.72 --
Gate-Drain Charge Q
gd
-- 4.3 --
Input Capacitance V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
C
iss
-- 700 --
pF
Output Capacitance C
oss
-- 125 --
Reverse Transfer Capacitance C
rss
-- 110 --
Switching
c
Turn-On Delay Time V
DD
= 10V, R
L
= 10Ω,
I
D
= 1A, V
GEN
= 4.5V,
R
G
= 6Ω
t
d(on)
-- 4.6 --
nS
Turn-On Rise Time t
r
-- 14 --
Turn-Off Delay Time t
d(off)
-- 30 --
Turn-Off Fall Time t
f
-- 5 --
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
TSM3446
20V N-Channel MOSFET
3/6
Version: D12
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
TSM3446
20V N-Channel MOSFET
4/6
Version: D12
Electrical Characteristics Curve
(Ta = 25
o
C, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
TSM3446
20V N-Channel MOSFET
5/6
Version: D12
SOT-26 Mechanical Drawing
Marking Diagram
46
= Device Code
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
SOT-26 DIMENSION
DIM
MILLIMETERS
INCHES
MIN
TYP
MAX
MIN TYP MAX
A 0.95 BSC 0.0374 BSC
A1
1.9 BSC 0.0748 BSC
B 2.60
2.80
3.00
0.1024
0.1102
0.1181
C 1.40
1.50
1.70
0.0551
0.0591
0.0669
D 2.80
2.90
3.10
0.1101
0.1142
0.1220
E 1.00
1.10
1.20
0.0394
0.0433
0.0472
F 0.00
-- 0.10
0.00 0.0039
G 0.35
0.40
0.50
0.0138
0.0157
0.0197
H 0.10
0.15
0.20
0.0039
0.0059
0.0079
I 0.30
-- 0.60
0.0118
-- 0.0236
J 5º -- 10º 5º -- 10º
TSM3446
20V N-Channel MOSFET
6/6
Version: D12
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