4
Quad NPN & PNP General Purpose Amplifier
These complementary devices can be used in switches with collector currents of 10 µA to
100 mA. These devices are best used when space is the primary consideration. Sourced
from Process 23 & 66. See 2N3904 (NPN) & 2N3906 (PNP) for characteristics.
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Parameter Value Units
VCEO Collec t or-Emitter Volt age 40 V
VCBO Collec t or-Base Volt age 40 V
VEBO Emi tter-Base Voltage 5.0 V
ICCollect or Current - Continuous 200 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C
Symbol Characteristic Max Units
MMPQ6700
PDTotal Device Dissipation
Derate above 25°C1000
8.0 mW
mW/°C
RθJA Thermal Res i stance, Junction t o Ambient
Effective 4 Die
Each Die 125
240 °C/W
°C/W
1997 Fairchild Semiconductor Corporation
MMPQ6700
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.
MMPQ6700
TRANSISTOR TYPE
C1 B1 E1 & C2 B2 E2 NPN
C3 B3 E3 & C4 B4 E4 PNP
SOIC-16
Mark: MMPQ6700 C1C1C2C2C3C3C4C4
E1 B1E2B2E3 B3E4B4
pin #1
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown
Voltage* IC = 10 mA, IB = 0 40 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V
V(BR)EBO Emitter-B ase Breakdown Voltage IE = 10 µA, IC = 0 5.0 V
ICBO Collec tor-Cutoff Current VCB = 30 V, I E = 0 50 nA
IEBO Emitter-Cutoff Current VEB = 4.0 V, I C = 0 50 nA
ON CHARACTERISTICS*
hFE DC Current Gain VCE = 1.0 V , IC = 0.1 m A
VCE = 1.0 V, I C = 1. 0 mA
VCE = 1.0 V, I C = 10 mA
30
50
70
VCE(sat)Collector-Em i t ter Saturati on Voltage IC = 10 mA , IB = 1.0 m A 0.25 V
VBE(sat)Base-Emitter Saturation Voltage IC = 10 mA, I B = 1.0 mA 0.90 V
SMALL SIGNAL CHARACTERISTICS
Cob Output Capacitance VCB = 5.0 V, f = 100 kHz 4.5 pF
Cib Input Capacitance VBE = 0.5 V, f = 100 kHz PNP
VBE = 0.5 V, f = 100 kHz NPN 10
8.0 pF
pF
fTCurrent-Gain Bandwidth Product IC = 10 mA , VCE = 20 V,
f = 100 MHz 200 MHz
*Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
Quad NPN & PNP General Purpose Amplifier
(continued)
MMPQ6700
F63TNR Label
ESD Label
ESD Label
F63TNR Label
343mm x 342mm x 64mm
St a nd ard Inte r m ed ia te bo x
SOIC(16lds) Packaging
Configuration: Fi
g
ure 1.0
Components
SOIC(16lds) Tape Leader and Trailer
Configuration: Fi
g
ure 2.0
Cover Tape
Carrier Tape
Note/Comments
Packa ging Option
SOIC (16lds) Packaging Information
Standard
(no flow c ode) L86Z
Packa ging type
Reel Size
TNR
13" Dia
Rail/Tube
-
Qty per Reel/Tube/Bag 2,500 45
Box Dimension (mm) 343x64x343 530x130x83
Max qty per Box 5,000 13,500
Weight per unit (gm) 0.1437 0.1437
Weight per Reel (kg) 0.7735 -
F63TNR Label sample
LOT: CBVK741B019
FSID: NDM3000
D/C1: D9842 QTY1: SPEC REV:
SPEC:
QTY: 2500
D/C2: QTY2: CPN: N/F: F (F63TNR)3
SOIC-1 6 Unit Or ient a tion
F
D85AB
NDM3001
F
D85AB
NDM3001
Pi n 1
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Antistatic Cover Tape
ESD Label
ELECTROSTATIC
SENSITIVE DEVICES
DO NOT SHI P OR STORE NEAR STRONG ELECTROSTATIC
ELECTROMAGNETIC, MAGNETIC OR R ADIOACTI VE FIELDS
TN R DA T E
PT NUM B ER
PEEL STRENGTH MIN _________ __ ___gms
MAX _____________ gms
Customized
Label
Packaging Description:
SOIC-16 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed a
g
ent.
These reeled parts in standard option are shipped with
2,5 00 uni t s pe r 13" or 33 0c m d ia met er re el . The re el s are
dark blue in color and is made of polystyrene plastic (anti-
static coated). This and some other options are further
described in the Packa
g
in
g
Information tab le.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
fi
g
ure 1.0) made of recyclable corru
g
ated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shippin
g
box which
comes in different sizes dependin
g
on the nu mbe r of pa rts
shipped.
Leader Tape
1680mm minimum or
210 empt
y
pocket s
Tr aile r Tape
640mm min imum or
80 empt
y
pocket s
F
D85AB
NDM3001
F
D85AB
NDM3001
F
D85AB
NDM3001
SOIC-16 Tape and Reel Data
October 1999, Rev. B
©2000 Fairchild Semiconductor International
SOIC-16 Tape and Reel Data, continued
July 1999, Rev. B
P1
A0 D1
P0
F
W
E1
D0
E2
B0
Tc
Wc
K0
T
Dimensions are in inches and millimeters
Tape Size Reel
Option Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
16m m 13" Dia 13.00
330 0.059
1.5 512 +0.020/-0.0 08
13 +0.5/-0.2 0.795
20.2 4.00
100 0.646 +0.078/-0.000
16.4 +2/0 0.882
22.4 0.626 – 0.764
15.9 – 19.4
13" Diameter Option
Dim A
Max
W3
W2 max Measured at Hub
W1 Measured at Hub
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum component rotation
0.9mm
maximum
0.9mm
maximum
Sketch C (Top View)
Component lateral movement
Typical
component
cavity
center line
10 deg maximum
Typical
component
center line
B0
A0
Sketch B (Top View)
Component Rotation
Sketch A (Side or F ront Sectional View)
Component Rotation
User Direction of Feed
SOIC(16lds) Embossed Carrier Tape
Configuration: Fi
g
ure 3.0
SOIC(16lds) Reel Configuratio n: Fi
g
ure 4. 0
Dimensions are in millimeter
Pk g type
A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc
SOIC
(
16lds
)
(16mm)
6.60
+/-0.30 10.35
+/-0.25 16.0
+/-0.3 1.55
+/-0.05 1.60
+/-0.10 1.75
+/-0.10 14.25
min 7.50
+/-0.05 8.0
+/-0.1 4.0
+/-0.1 2.40
+/-0.40 0.450
+/-0.150 13.0
+/-0.3 0.06
+/-0.02
Dim D
min
Dim C
B Min
DETAIL AA
See detail AA
Dim A
max Dim N
SOIC-16 (FS PKG Code S3)
SOIC-16 Package Dimensions
October 1999, Rev. A1
1:1
Scale 1:1 on letter size paper
Dimensions shown belo w are in:
inches [millimeters]
Part Weight per unit (gram): 0.1437
©2000 Fairchild Semiconductor International
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not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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