BUZ 102S-4 Preliminary data SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Avalanche-rated * dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 102S-4 55 V 6.4 A 0.028 P-DSO-28 C67078-S. . . . -A.. Maximum Ratings Parameter Symbol Continuous drain current one channel active ID TA = 25 C Values Unit A 6.4 Pulsed drain current one channel active IDpuls TA = 25 C 25.6 EAS Avalanche energy, single pulse mJ ID = 6.4 A, VDD = 25 V, RGS = 25 L = 12 mH, Tj = 25 C 245 Reverse diode dv/dt dv/dt kV/s IS = 6.4 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C 6 Gate source voltage VGS Power dissipation ,one channel active Ptot TA = 25 C 20 V W 2.4 Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 IEC climatic category, DIN IEC 68-1 Semiconductor Group C 55 / 175 / 56 1 07/Oct/1997 BUZ 102S-4 Preliminary data Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Thermal resistance, junction - soldering point 1) RthJS - - tbd Thermal resistance, junction - ambient 2) RthJA - - 62.5 K/W 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70m thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage 55 - - 2.1 3 4 VGS(th) VGS=VDS, ID = 90 A Zero gate voltage drain current V IDSS A VDS = 55 V, VGS = 0 V, Tj = -40 C - - 0.1 VDS = 55 V, VGS = 0 V, Tj = 25 C - 0.1 1 VDS = 55 V, VGS = 0 V, Tj = 150 C - - 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 RDS(on) VGS = 10 V, ID = 6.4 A Semiconductor Group nA - 2 0.02 0.028 07/Oct/1997 BUZ 102S-4 Preliminary data Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS 2 * ID * RDS(on)max, ID = 6.4 A Input capacitance 8 pF - 1220 1525 - 410 515 - 210 265 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 6.4 A RG = 7.1 Rise time - 20 30 - 22 33 - 60 90 - 30 45 tr VDD = 30 V, VGS = 10 V, ID = 6.4 A RG = 7.1 Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 6.4 A RG = 7.1 Fall time tf VDD = 30 V, VGS = 10 V, ID = 6.4 A RG = 7.1 Gate charge at threshold Qg(th) VDD = 40 V, ID 0.1 A, VGS =0 to 1 V Gate charge at 7.0 V 3.75 - 35 52 - 45 68 V(plateau) VDD = 40 V, ID = 6.4 A Semiconductor Group 2.5 Qg(total) VDD = 40 V, ID = 6.4 A, VGS =0 to 10 V Gate plateau voltage - Qg(7) VDD = 40 V, ID = 6.4 A, VGS =0 to 7 V Gate charge total nC V - 3 4 - 07/Oct/1997 BUZ 102S-4 Preliminary data Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current, pulsed - - 25.6 V 0.9 1.6 trr ns - 60 90 Qrr VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 6.4 - VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge - VSD VGS = 0 V, IF = 12.8 A Reverse recovery time - ISM TA = 25 C Inverse diode forward voltage A C - 4 0.15 0.23 07/Oct/1997 BUZ 102S-4 Preliminary data Power dissipation Ptot = (T) 2.6 Drain current ID = (TC) parameter: VGS 10 V 6.5 RthJA thJC W A 2.2 Ptot 5.5 ID 2.0 5.0 1.8 4.5 1.6 4.0 1.4 3.5 1.2 3.0 1.0 2.5 0.8 2.0 0.6 1.5 0.4 1.0 0.2 0.5 0.0 0.0 0 20 40 Semiconductor Group 60 80 100 120 140 C T 180 0 20 40 60 80 100 120 140 C 180 TC 5 07/Oct/1997 BUZ 102S-4 Preliminary data Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 15 A 13 ID l 0.09 Ptot = 2W kjh igf e d a VGS [V] a 4.0 12 b 4.5 c 5.0 d 5.5 9 e 6.0 8 f 6.5 g 7.0 h 7.5 6 i 8.0 5 j 9.0 k 10.0 l 20.0 11 c 10 7 b 4 RDS (on)0.07 0.06 0.05 b 0.04 c 0.03 d 0.02 f e g ih j 3 2 0.01 a 1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 0 5.0 VGS [V] = a 4.0 4.5 5.0 b 5.5 2 c 6.0 d 6.5 e f 7.0 7.5 4 6 g 8.0 h i j 9.0 10.0 20.0 8 A 12 ID VDS Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 s VDS2 x ID x RDS(on)max 90 A ID 70 60 50 40 30 20 10 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 07/Oct/1997 BUZ 102S-4 Preliminary data Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 6.4 A, VGS = 10 V Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 90 A 0.080 4.6 4.0 V RDS (on) 0.060 VGS(th) 98% 3.6 3.2 0.050 typ 2.8 0.040 2.4 98% 2% 2.0 0.030 typ 1.6 1.2 0.020 0.8 0.010 0.4 0.000 -60 -20 20 60 100 C 0.0 -60 180 -20 20 60 100 C Tj 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 2 A C IF pF 10 1 Ciss 10 3 10 0 Tj = 25 C typ Coss Tj = 175 C typ Tj = 25 C (98%) Crss 10 2 0 5 10 Semiconductor Group 15 20 25 30 Tj = 175 C (98%) V 40 VDS 7 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 07/Oct/1997 BUZ 102S-4 Preliminary data Avalanche energy EAS = (Tj) parameter: ID = 6.4 A, VDD = 25 V RGS = 25 , L = 12 mH Typ. gate charge VGS = (QGate) parameter: ID puls = 6 A 260 16 mJ V 220 EAS VGS 200 12 180 10 160 140 8 0,2 VDS max 120 100 0,8 VDS max 6 80 4 60 40 2 20 0 20 40 60 80 100 120 140 C 0 0 180 Tj 10 20 30 40 50 nC 65 QGate Drain-source breakdown voltage V(BR)DSS = (Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07/Oct/1997