Semiconductor Group 1 07/Oct/1997
BUZ 102S-4
Preliminary data
SIPMOS ® Power Transistor
• Quad-channel
• Enhancement mode
• Avalanche-rated
• d
v
/d
t
rated
Type
V
DS
I
D
R
DS(on)Package Ordering Code
BUZ 102S-4 55 V 6.4 A 0.028 ΩP-DSO-28 C67078-S. . . . -A..
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
one channel active
T
A = 25 °C
I
D 6.4 A
Pulsed drain current
one channel active
T
A = 25 °C
I
Dpuls 25.6
Avalanche energy, single pulse
I
D = 6.4 A,
V
DD = 25 V,
R
GS = 25 Ω
L
= 12 mH,
T
j = 25 °C
E
AS
245
mJ
Reverse diode d
v
/d
t
I
S = 6.4 A,
V
DS = 40 V, d
i
F/d
t
= 200 A/µs
T
jmax = 175 °C
d
v
/d
t
6
kV/µs
Gate source voltage
V
GS ± 20 V
Power dissipation
,one channel active
T
A = 25 °C
P
tot 2.4 W
Operating temperature
T
j -55 ... + 175 °C
Storage temperature
T
stg -55 ... + 175
IEC climatic category, DIN IEC 68-1 55 / 175 / 56
Semiconductor Group 2 07/Oct/1997
BUZ 102S-4
Preliminary data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - soldering point 1)
R
thJS -- tbd K/W
Thermal resistance, junction - ambient 2)
R
thJA -- 62.5
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for
Drain connection. PCB is vertical without blown air.
2) one channel active
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
GS = 0 V,
I
D = 0.25 mA,
T
j = 25 °C
V
(BR)DSS 55 - - V
Gate threshold voltage
V
GS=
V
DS,
I
D = 90 µA
V
GS(th) 2.1 3 4
Zero gate voltage drain current
V
DS = 55 V,
V
GS = 0 V,
T
j = -40 °C
V
DS = 55 V,
V
GS = 0 V,
T
j = 25 °C
V
DS = 55 V,
V
GS = 0 V,
T
j = 150 °C
I
DSS
-
-
-
-
0.1
-
100
1
0.1 µA
Gate-source leakage current
V
GS = 20 V,
V
DS = 0 V
I
GSS - 10 100 nA
Drain-Source on-resistance
V
GS = 10 V,
I
D = 6.4 A
R
DS(on) - 0.02 0.028 Ω
Semiconductor Group 3 07/Oct/1997
BUZ 102S-4
Preliminary data
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance
V
DS≥ 2 *
I
D *
R
DS(on)max,
I
D = 6.4 A
g
fs 8 --S
Input capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
iss - 1220 1525 pF
Output capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
oss - 410 515
Reverse transfer capacitance
V
GS = 0 V,
V
DS = 25 V,
f
= 1 MHz
C
rss - 210 265
Turn-on delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 6.4 A
R
G = 7.1 Ω
t
d(on)
- 20 30
ns
Rise time
V
DD = 30 V,
V
GS = 10 V,
I
D = 6.4 A
R
G = 7.1 Ω
t
r
- 22 33
Turn-off delay time
V
DD = 30 V,
V
GS = 10 V,
I
D = 6.4 A
R
G = 7.1 Ω
t
d(off)
- 60 90
Fall time
V
DD = 30 V,
V
GS = 10 V,
I
D = 6.4 A
R
G = 7.1 Ω
t
f
- 30 45
Gate charge at threshold
V
DD = 40 V,
I
D ≥ 0.1 A,
V
GS =0 to 1 V
Q
g(th) - 2.5 3.75 nC
Gate charge at 7.0 V
V
DD = 40 V,
I
D = 6.4 A,
V
GS =0 to 7 V
Q
g(7) - 35 52
Gate charge total
V
DD = 40 V,
I
D = 6.4 A,
V
GS =0 to 10 V
Q
g(total) - 45 68
Gate plateau voltage
V
DD = 40 V,
I
D = 6.4 A
V
(plateau) - 4- V
Semiconductor Group 4 07/Oct/1997
BUZ 102S-4
Preliminary data
Electrical Characteristics, at
T
j = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Reverse Diode
Inverse diode continuous forward current
T
A = 25 °C
I
S- - 6.4 A
Inverse diode direct current, pulsed
T
A = 25 °C
I
SM - - 25.6
Inverse diode forward voltage
V
GS = 0 V,
I
F = 12.8 A
V
SD - 0.9 1.6 V
Reverse recovery time
V
R = 30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
t
rr - 60 90 ns
Reverse recovery charge
V
R = 30 V,
I
F=
l
S, d
i
F/d
t
= 100 A/µs
Q
rr - 0.15 0.23 µC
Semiconductor Group 5 07/Oct/1997
BUZ 102S-4
Preliminary data
Power dissipation
P
tot = ƒ(
T
)
0 20 40 60 80 100 120 140 °C 180
T
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
W
2.6
P
tot
R
thJC
R
thJA
Drain current
I
D = ƒ(
T
C)
parameter:
V
GS ≥ 10 V
020 40 60 80 100 120 140 °C 180
T
C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
A
6.5
I
D
Semiconductor Group 6 07/Oct/1997
Preliminary data
BUZ 102S-4
Typ. drain-source on-resistance
R
DS (on) = ƒ(
I
D)
parameter:
t
p = 80 µs,
T
j = 25 °C
0 2 4 6 8 A 12
I
D
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0.07
Ω
0.09
R
DS (on)
V
GS [V] =
a
4.0
V
GS [V] =
a
4.5
V
GS [V] =
a
a
5.0
b
b
5.5
c
c
6.0
d
d
6.5
e
e
7.0
f
f
7.5
g
g
8.0
h
h
9.0
i
i
10.0
j
j
20.0
Typ. output characteristics
I
D = ƒ(
V
DS)
parameter:
t
p = 80 µs ,
T
j = 25 °C
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0
V
DS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
A
15
I
D
V
GS [V]
a
a 4.0
b
b 4.5
cc 5.0
d
d 5.5
e
e 6.0
f
f 6.5
g
g 7.0
h
h 7.5
i
i 8.0
j
j 9.0
k
k 10.0
l
P
tot = 2W
l 20.0
Typ. transfer characteristics
I
D =
f
(
V
GS)
parameter:
t
p = 80 µs
V
DS≥2 x
I
D x
R
DS(on)max
0 1 2 3 4 5 6 7 8 V 10
V
GS
0
10
20
30
40
50
60
70
A
90
I
D
Semiconductor Group 7 07/Oct/1997
Preliminary data
BUZ 102S-4
Drain-source on-resistance
R
DS (on) = ƒ(
T
j)
parameter:
I
D = 6.4 A,
V
GS = 10 V
-60 -20 20 60 100 °C 180
T
j
0.000
0.010
0.020
0.030
0.040
0.050
0.060
Ω
0.080
R
DS (on)
typ
98%
Gate threshold voltage
V
GS (th) = ƒ(
T
j)
parameter:
V
GS =
V
DS,
I
D = 90 µA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60 -20 20 60 100 °C 180
T
j
2%
typ
98%
Typ. capacitances
C
=
f
(
V
DS)
parameter:
V
GS = 0V,
f
= 1MHz
0 5 10 15 20 25 30 V 40
V
DS
2
10
3
10
4
10
pF
C
C
iss
C
oss
C
rss
Forward characteristics of reverse diode
I
F = ƒ(
V
SD)
parameter:
T
j
, t
p = 80 µs
-1
10
0
10
1
10
2
10
A
I
F
0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 175 °C typ
T
j = 175 °C (98%)
Semiconductor Group 8 07/Oct/1997
Preliminary data
BUZ 102S-4
Avalanche energy
E
AS = ƒ(
T
j)
parameter:
I
D = 6.4 A,
V
DD = 25 V
R
GS = 25 Ω,
L
= 12 mH
20 40 60 80 100 120 140 °C 180
T
j
0
20
40
60
80
100
120
140
160
180
200
220
mJ
260
E
AS
Typ. gate charge
V
GS = ƒ(
Q
Gate)
parameter:
I
D puls = 6 A
010 20 30 40 50 nC 65
Q
Gate
0
2
4
6
8
10
12
V
16
V
GS
DS max
V
0,8
DS max
V
0,2
Drain-source breakdown voltage
V
(BR)DSS = ƒ(
T
j)
-60 -20 20 60 100 °C 180
T
j
49
51
53
55
57
59
61
V
65
V
(BR)DSS
