Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com 1
Specifications subject to change without notice. 1/01A
28–32 GHz GaAs MMIC
Driver Amplifier
Features
■Single Bias Supply Operation (5 V)
■19 dB Typical Small Signal Gain
■16 dBm Typical P1 dB Output Power
at 28 GHz
■0.25 µm Ti/Pd/A u Gates
■100% On-Wafer RF and DC Testing
■100% Visual Inspection to MIL-STD-883
MT 2010
Chip Outline
AA031P1-00
Description
Alpha’s three-stage reactively-matched 28–32 GHz
GaAs MMIC driver amplifier has typical small signal gain
of 19 dB with a typical P1 dB of 16 dBm at 28 GHz.The
chip uses Alpha’s proven 0.25 µm MESFET technology,
and is based upon MBE layers and electron beam
lithography for the highest uniformity and repeatability.
The FETs employ surface passivation to ensure a
rugged, reliable part with through-substrate via holes and
gold-based backside metallization to facilitate a
conductive epoxy die attach process. All chips are
screened f or gain, output power and S-parameters prior
to shipment for guaranteed performance. Designed for
28–32 GHz LMDS and digital radio bands.
Parameter Condition Symbol Min. Typ.2Max. Unit
Drain Current IDS 145 200 mA
Small Signal Gain F = 28–32 GHz G 17 19 dB
Input Return Loss F = 28–32 GHz RLI-10 -6 dB
Output Return Loss F = 28–32 GHz RLO-15 -10 dB
Output Power at 1 dB Gain Compression F = 28 GHz P1 dB 14 16 dBm
Saturated Output Power F = 28 GHz PSAT 15 18 dBm
Thermal Resistance1ΘJC 101 °C/W
Electrical Specifications at 25°C (VDS = 5 V)
0.000
0.085
2.500
2.415
2.093
0.000
1.365 1.255
0.651
0.663
Dimensions indicated in mm.
All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide.
Chip thickness = 0.1 mm.
Characteristic Value
Operating Temperature (TC) -55°C to +90°C
Storage Temperature (TST) -65°C to +150°C
Bias Voltage (VD)7 V
DC
Power In (PIN) 16 dBm
Junction Temperature (TJ) 175°C
Absolute Maximum Ratings
1.Calculated value based on measurement of discrete FET.
2.Typical represents the median parameter value across the specified
frequency range for the median chip.
28–32 GHz GaAs MMIC Driver Amplifier AA031P1-00
2Alpha Industries, Inc. [781] 935-5150 •Fax [617] 824-4579 •Email sales@alphaind.com •www.alphaind.com
Specifications subject to change without notice. 1/01A
Frequency (GHz)
Typical Small Signal Performance
S-Parameters (VDS = 5 V)
-45
-40
-35
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
20 22 24 26 28 30 32 34
Gain & Return Losses (dB)
S11
S12
S21
S22
Typical Power Sweep (VDS = 5 V)
11
12
13
14
15
16
17
18
19
20
-10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5
Input Power @ 28 GHz (dBm)
Output Power (dBm), Gain (dB)
Gain
Output Power @ 28 GHz
Typical Performance Data
VD = 5 V
RF IN RF OUT
.01 µF 50 pF
Bias Arrangement
Detail A
RF IN RF OUT
VDS
SEE
DETAIL A
Circuit Schematic
For biasing on, adjust VDS from zero to the desired value
(5 V recommended).For biasing off, reverse the biasing on procedure.
