1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOT23 small Surface
Mounted Device (SMD) plastic package.
1.2 Features
Forward current: 0.5 A
Very low forward voltage
Small SMD plastic package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conve rs ion
Switch mode power supply
Inverse polarity protection
Low power consumption applications
PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in
SOT23 package
Rev. 02 — 13 January 2010 Product data sheet
Table 1. Product overview
Type number Package Configuration
NXP JEITA
PMEG2005ET SOT23 - single diode
PMEG3005ET SOT23 - single diode
PMEG4005ET SOT23 - single diode
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 2 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
1.4 Quick reference data
[1] Pulse test: tp300 μs; δ≤0.02.
2. Pinning information
3. Ordering information
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
IFforward current - - 0.5 A
VRreverse voltage
PMEG2005ET - - 20 V
PMEG3005ET - - 30 V
PMEG4005ET - - 40 V
VFforward voltage IF= 500 mA [1]
PMEG2005ET - 355 390 mV
PMEG3005ET - 380 430 mV
PMEG4005ET - 420 470 mV
Table 3. Pinning
Pin Description Simplified outline Symbol
1 anode
2 not connected
3 cathode
12
3
mlc357
2
n.c.
1
3
Table 4. Ordering information
Type number Package
Name Description Version
PMEG2005ET - plastic surface mounted package; 3 leads SOT23
PMEG3005ET - plastic surface mounted package; 3 leads SOT23
PMEG4005ET - plastic surface mounted package; 3 leads SOT23
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 3 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse
power losses PR and IF(AV) rating will be available on request.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
Table 5. Marking codes
Type number Marking code[1]
PMEG2005ET P3*
PMEG3005ET P4*
PMEG4005ET P5*
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VRreverse voltage
PMEG2005ET - 20 V
PMEG3005ET - 30 V
PMEG4005ET - 40 V
IFforward current - 0.5 A
IFRM repetitive peak forward current tp1 ms; δ≤0.5 - 3.9 A
IFSM non-repetitive peak forward
current tp= 8 ms square
wave [1] -10A
Ptot total power dissipation Tamb 25 °C[1] - 280 mW
[2] - 420 mW
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2] --440K/W
[1][3] --300K/W
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 4 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
7. Characteristics
[1] Pulse test: tp300 μs; δ≤0.02.
Table 8. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VFforward voltage [1]
PMEG2005ET IF= 0.1 mA - 90 130 mV
IF= 1 mA - 150 190 mV
IF= 10 mA - 210 240 mV
IF= 100 mA - 280 330 mV
IF= 500 mA - 355 390 mV
PMEG3005ET IF= 0.1 mA - 90 130 mV
IF= 1 mA - 150 200 mV
IF= 10 mA - 215 250 mV
IF= 100 mA - 285 340 mV
IF= 500 mA - 380 430 mV
PMEG4005ET IF= 0.1 mA - 95 130 mV
IF= 1 mA - 155 210 mV
IF= 10 mA - 220 270 mV
IF= 100 mA - 295 350 mV
IF= 500 mA - 420 470 mV
IRreverse current
PMEG2005ET VR=10V - 15 40 μA
VR= 20 V - 40 200 μA
PMEG3005ET VR=10V - 12 30 μA
VR= 30 V - 40 150 μA
PMEG4005ET VR=10V - 7 20 μA
VR= 40 V - 30 100 μA
Cddiode capacitance VR=1V; f=1MHz
PMEG2005ET - 66 80 pF
PMEG3005ET - 55 70 pF
PMEG4005ET - 43 50 pF
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 5 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb =85°C
(4) Tamb =25°C
(5) Tamb =40 °C
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb =85°C
(4) Tamb =25°C
(5) Tamb =40 °C
Fig 1. PMEG2005ET: Forward current as a function of
forward voltage; typical values Fig 2. PMEG2005ET: Reverse current as a function of
reverse voltage; typical values
Tamb =25°C; f = 1 MHz
Fig 3. PMEG2005ET: Diode capacitance as a function of reverse voltage; typical values
006aaa517
10
102
103
104
IF
(mA)
1
VF (V)
0 0.60.40.2
(3)(2)(1) (4) (5)
006aaa518
I
R
(μA)
1
10
2
10
1
10
4
10
3
10
2
10
10
5
10
3
V
R
(V)
02015510
(3)
(2)
(1)
(4)
(5)
VR (V)
020168124
006aaa249
40
80
120
Cd
(pF)
0
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 6 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb =85°C
(4) Tamb =25°C
(5) Tamb =40 °C
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb =85°C
(4) Tamb =25°C
(5) Tamb =40 °C
Fig 4. PMEG3005ET: Forward current as a function of
forward voltage; typical values Fig 5. PMEG3005ET: Reverse current as a function of
reverse voltage; typical values
Tamb =25°C; f = 1 MHz
Fig 6. PMEG3005ET: Diode capacitance as a function of reverse voltage; typical values
006aaa519
10
102
103
104
IF
(mA)
1
VF (V)
0 0.80.60.2 0.4
(3)(2)(1) (4) (5)
006aaa520
I
R
(μA)
1
10
2
10
1
10
4
10
3
10
2
10
10
5
10
3
V
R
(V)
03025510 2015
(3)
(2)
(1)
(4)
(5)
VR (V)
0302010
006aaa252
40
80
120
Cd
(pF)
0
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 7 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb =85°C
(4) Tamb =25°C
(5) Tamb =40 °C
(1) Tamb = 150 °C
(2) Tamb = 125 °C
(3) Tamb =85°C
(4) Tamb =25°C
(5) Tamb =40 °C
Fig 7. PMEG4005ET: Forward current as a function of
forward voltage; typical values Fig 8. PMEG4005ET: Reverse current as a function of
reverse voltage; typical values
Tamb =25°C; f = 1 MHz
Fig 9. PMEG4005ET: Diode capacitance as a function of reverse voltage; typical values
006aaa521
10
102
103
104
IF
(mA)
1
VF (V)
0 1.00.80.4 0.60.2
(3)(1) (4) (5)(2)
006aaa522
I
R
(μA)
1
10
2
10
1
10
4
10
3
10
2
10
10
5
10
3
V
R
(V)
0403010 20
(3)
(2)
(1)
(4)
(5)
VR (V)
0403010 20
006aaa255
40
60
20
80
100
Cd
(pF)
0
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 8 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
8. Package outline
9. Packing information
[1] For further information and the availability of packing methods, see Section 13.
Fig 10. Package outline SOT23 (TO-236AB)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
Table 9. Packing methods
The -xxx numbers are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
PMEG2005ET SOT23 4 mm pitch, 8 mm tape and reel -215 -235
PMEG3005ET
PMEG4005ET
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 9 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
10. Soldering
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 11. Reflow soldering footprint SOT23 (TO-236AB)
MSA439
1.00
0.60
(3x)
1.30
12
3
2.50
3.00
0.85
2.70
2.90
0.50 (3x)
0.60 (3x)
3.30
0.85
solder lands
solder resist
occupied area
solder paste
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 10 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
11. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Cha nge notice Supersedes
PMEGXX05ET_SER_2 20100113 Product data sheet - PMEGXX05ET_SER_1
Modifications: This data sheet was changed to reflec t the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 11Reflow soldering footprint SOT23 (TO-236AB): updated
PMEGXX05ET_SER_1 20050715 Product data sheet - -
PMEGXX05ET_SER_2 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 02 — 13 January 2010 11 of 12
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the shor t data sheet, the
full data sheet shall pre va il.
12.3 Disclaimers
General — In formation in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give an y represent ations or
warranties, expressed or impli ed, as to the accuracy or completeness of such
information and shall have no liability for th e co nsequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failur e or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ra tings System of IEC 60134) may cause permane nt
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other co nditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may af fect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as publish ed
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limit ation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between inf ormation in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Char acteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specif ication for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specifica tion.
NXP Semiconductors PMEGxx05ET series
0.5 A very low VF MEGA Schottky barrier rectifiers in SOT23 package
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 13 January 2010
Document identifier: PMEGXX05ET_SER_2
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Packing information . . . . . . . . . . . . . . . . . . . . . 8
10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13 Contact information. . . . . . . . . . . . . . . . . . . . . 11
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12