MMBT2907AWT1G, NSVMMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. www.onsemi.com COLLECTOR 3 Features * NSV Prefix for Automotive and Other Applications Requiring * Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Symbol Value Unit Collector -Emitter Voltage Rating VCEO -60 Vdc Collector -Base Voltage VCBO -60 Vdc Emitter -Base Voltage VEBO -5.0 Vdc IC -600 mAdc Symbol Max Unit PD 150 mW RqJA 833 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 3 SC -70/SOT- 323 CASE 419 -04 STYLE 3 1 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature 20 MG G 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 20 M G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping MMBT2907AWT1G SC-70 (Pb-Free) 3000 Tape & Reel NSVMMBT2907AWT1G SC-70 (Pb-Free) 3000 Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2016 July, 2016 - Rev. 8 1 Publication Order Number: MMBT2907AWT1/D MMBT2907AWT1G, NSVMMBT2907AWT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector -Emitter Breakdown Voltage (Note 2) (IC = -10 mAdc, IB = 0) V(BR)CEO -60 - Vdc Collector -Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO -60 - Vdc Emitter -Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IBL - -50 nAdc Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ICEX - -50 nAdc 75 100 100 100 50 - - - 340 - - - -0.4 -1.6 - - -1.3 -2.6 fT 200 - MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo - 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo - 30 pF ton - 45 td - 10 Rise Time tr - 40 Storage Time ts - 80 tf - 30 toff - 100 OFF CHARACTERISTICS ON CHARACTERISTICS(3) DC Current Gain (Note 2) (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (IC = -500 mAdc, VCE = -10 Vdc) HFE Collector -Emitter Saturation Voltage (Note 2) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base -Emitter Saturation Voltage (Note 2) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) - Vdc Vdc SMALL- SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -50 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) Delay Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc) Fall Time Turn-Off Time ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns INPUT Zo = 50 W PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME 5.0 ns -30 V 200 ns -6.0 V 1.0 k 1.0 k 0 50 -16 V +15 V 50 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit www.onsemi.com 2 MMBT2907AWT1G, NSVMMBT2907AWT1G TYPICAL CHARACTERISTICS 1000 VCE = 10 V hFE, DC CURRENT GAIN TJ = 150C 25C 100 -55C 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25C tf 30 20 td @ VBE(off) = 0 V 3.0 -5.0 -7.0 -10 30 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT 100 70 50 ts = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 t, TIME (ns) t, TIME (ns) 300 200 -200 -300 -500 Figure 5. Turn-On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-Off Time www.onsemi.com 3 MMBT2907AWT1G, NSVMMBT2907AWT1G TYPICAL SMALL-SIGNAL Characteristics NOISE FIGURE VCE = 10 Vdc, TA = 25C 100 VCE = 2 V C, CAPACITANCE (pF) fT, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) 1000 100 10 Cobo 10 1 1 0.01 1 0.1 10 0.1 100 1 10 IC, COLLECTOR CURRENT (mA) REVERSE VOLTAGE (V) Figure 7. Current-Gain - Bandwidth Product Figure 8. Capacitances 1 100 1.1 IC/IB = 10 1.0 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) Cibo 150C 25C -55C 0.1 IC/IB = 10 0.9 -55C 0.8 25C 0.7 0.6 0.5 150C 0.4 0.3 0.01 0.2 0.001 0.01 0.1 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 9. Collector Emitter Saturation Voltage vs. Collector Current Figure 10. Base Emitter Saturation Voltage vs. Collector Current VBE(on), BASE-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) 1.2 1.1 VCE = 1 V 1.0 0.9 -55C 0.8 25C 0.7 0.6 0.5 150C 0.4 0.3 0.2 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 11. Base Emitter Voltage vs. Collector Current www.onsemi.com 4 1 1 MMBT2907AWT1G, NSVMMBT2907AWT1G PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR c A2 MIN 0.80 0.00 L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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