© Semiconductor Components Industries, LLC, 2016
July, 2016 − Rev. 8 1Publication Order Number:
MMBT2907AWT1/D
MMBT2907AWT1G,
NSVMMBT2907AWT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−70/SOT−323 package which
is designed for low power surface mount applications.
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −60 Vdc
Collector−Base Voltage VCBO −60 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°CPD150 mW
Thermal Resistance Junction−to−Ambient RqJA 833 °C/W
Junction and Storage Temperature TJ, Tstg −55 to
+150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
www.onsemi.com
Device Package Shipping†
ORDERING INFORMATION
MARKING DIAGRAM
12
3
SC−70/SOT−323
CASE 419−04
STYLE 3
COLLECTOR
3
1
BASE
2
EMITTER
MMBT2907AWT1G SC−70
(Pb−Free) 3000 Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer t o our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
20 MG
G
20 = Specific Device Code
M = Date Code
G= Pb−Free Package
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
NSVMMBT2907AWT1G SC−70
(Pb−Free) 3000 Tape &
Reel
MMBT2907AWT1G, NSVMMBT2907AWT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(IC = −10 mAdc, IB = 0) V(BR)CEO −60 − Vdc
Collector−Base Breakdown Voltage
(IC = −10 mAdc, IE = 0) V(BR)CBO −60 − Vdc
Emitter−Base Breakdown Voltage
(IE = −10 mAdc, IC = 0) V(BR)EBO −5.0 − Vdc
Base Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IBL −−50 nAdc
Collector Cutoff Current
(VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX −−50 nAdc
ON CHARACTERISTICS(3)
DC Current Gain (Note 2)
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
HFE 75
100
100
100
50
−
−
−
340
−
−
Collector−Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat) −
−−0.4
−1.6
Vdc
Base−Emitter Saturation Voltage (Note 2)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat) −
−−1.3
−2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −50 mAdc, VCE = 20 Vdc, f = 100 MHz) fT200 − MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo − 8.0 pF
Input Capacitance
(VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo − 30 pF
SWITCHING CHARACTERISTICS
T urn−On Time (VCC = −30 Vdc,
IC = −150 mAdc, IB1 = −15 mAdc)
ton − 45
ns
Delay Time td− 10
Rise Time tr− 40
Storage Time (VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = 15 mAdc)
ts− 80
Fall Time tf− 30
T urn−Off Time toff − 100
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
00
-16 V
200 ns
50
1.0 k
200
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
+15 V -6.0 V
1.0 k 37
50 1N916
1.0 k
200 ns
-30 V
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50 W
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit
MMBT2907AWT1G, NSVMMBT2907AWT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (mA)
100
1000
10
1.0
TJ = 150°C
25°C
-55°C
hFE, DC CURRENT GAIN
10 100 1000
VCE = 10 V
Figure 4. Collector Saturation Region
IB, BASE CURRENT (mA)
-0.4
-0.6
-0.8
-1.0
-0.2
V , COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
CE
IC = -1.0 mA
-0.005
-10 mA
-0.01
-100 mA -500 mA
-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50
Figure 5. Turn−On Time
IC, COLLECTOR CURRENT
300
-5.0
Figure 6. Turn−Off Time
IC, COLLECTOR CURRENT (mA)
-5.0
t, TIME (ns)
t, TIME (ns)
200
100
70
50
30
20
10
7.0
5.0
3.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
tr
2.0 V
td @ VBE(off) = 0 V
VCC = -30 V
IC/IB = 10
TJ = 25°C
500
300
100
70
50
30
20
10
7.0
5.0
-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
200
tf
t′s = ts - 1/8 tf
VCC = -30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
MMBT2907AWT1G, NSVMMBT2907AWT1G
www.onsemi.com
4
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
Figure 7. Current−Gain − Bandwidth Product Figure 8. Capacitances
IC, COLLECTOR CURRENT (mA) REVERSE VOLTAGE (V)
1000.10.01
1
10
1000
1001010.1
1
10
100
fT, CURRENT−GAIN − BANDWIDTH
PRODUCT (MHz)
C, CAPACITANCE (pF)
VCE = 2 V
Cobo
110
100
Cibo
Figure 9. Collector Emitter Saturation Voltage
vs. Collector Current Figure 10. Base Emitter Saturation Voltage vs.
Collector Current
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
10.10.010.001
0.01
0.1
1
10.10.010.001
0.2
0.3
0.5
0.7
0.8
1.0
1.1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
150°C
−55°C
25°C
0.4
0.6
0.9
IC/IB = 10
150°C
−55°C
25°C
Figure 11. Base Emitter Voltage vs. Collector
Current
IC, COLLECTOR CURRENT (A)
10.10.010.001
0.2
0.3
0.5
0.6
0.7
0.9
1.1
1.2
VBE(on), BASE−EMITTER VOLTAGE (V)
0.4
0.8
1.0
VCE = 1 V
150°C
−55°C
25°C
MMBT2907AWT1G, NSVMMBT2907AWT1G
www.onsemi.com
5
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE N
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
AA2
De1
b
e
E
A1
c
L
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
0.05 (0.002)
1.9
0.075
0.65
0.025
0.65
0.025
0.9
0.035
0.7
0.028 ǒmm
inchesǓ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
HE
DIM
AMIN NOM MAX MIN
MILLIMETERS
0.80 0.90 1.00 0.032
INCHES
A1 0.00 0.05 0.10 0.000
A2 0.70 REF
b0.30 0.35 0.40 0.012
c0.10 0.18 0.25 0.004
D1.80 2.10 2.20 0.071
E1.15 1.24 1.35 0.045
e1.20 1.30 1.40 0.047
0.035 0.040
0.002 0.004
0.014 0.016
0.007 0.010
0.083 0.087
0.049 0.053
0.051 0.055
NOM MAX
L2.00 2.10 2.40 0.079 0.083 0.095
HE
e1 0.65 BSC
0.38
0.028 REF
0.026 BSC
0.015
0.20 0.56 0.008 0.022
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