MURS340 thru MURS360 Vishay Semiconductors New Product formerly General Semiconductor Ultrafast Rectifiers Reverse Voltage 400 to 600V Forward Current 3.0A Reverse Recovery Time 50ns DO-214AB (SMC) Cathode Band Mounting Pad Layout 0.245 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.185 MAX. (4.69 MAX.) 0.280 (7.11) 0.260 (6.60) 0.121 MIN. (3.07 MIN.) 0.012 (0.305) 0.006 (0.152) 0.060 MIN. (1.52 MIN.) 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.320 (8.13) 0.305 (7.75) 0.008 (0.203) Max. 0.320 REF Dimensions in inches and (millimeters) Features * Plastic package has Underwriters Laboratories Flammability Classification 94V-0 * Ideally suited for use in very high frequency switching power supplies, inverters and as free wheeling diodes * Ultrafast recovery time for high efficiency * Glass passivated junction * High temperature soldering guaranteed: 250C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Mechanical Data Case: JEDEC DO-214AB molded plastic body over passivated chip Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.007oz., 0.21g Maximum Ratings & Thermal Characteristics Ratings at 25C ambient temperature unless otherwise specified. Parameter Symbol Device Marking Codes MURS340 MURS360 MG MJ Unit Maximum repetitive peak reverse voltage VRRM 400 600 V Working peak reverse voltage VRWM 400 600 V VDC 400 600 V Maximum DC blocking voltage IF(AV) 3.0 4.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 125 A Typical thermal resistance junction to ambient RJL 11 C/W TJ, TSTG -65 to +175C C Maximum average forward rectified current at: (See figure 1) TL = 130C TL = 115C Operating junction and storage temperature range Electrical Characteristics Ratings at 25C ambient temperature unless otherwise specified. IF = 3.0A, TJ = 25C IF = 4.0A, TJ = 25C IF = 3.0A, TJ = 150C VF 1.25 1.28 1.05 V TJ = 25C TJ = 150C IR 10 250 A Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A trr 50 ns Maximum reverse recovery time at, IF=1.0A, di/dt=50A/s, VR=30V, Irr=10% IRM trr 75 ns 25 ns Maximum instantaneous forward voltage (1) Maximum instantaneous reverse current at rated DC blocking voltage (1) Maximum forward recovery time IF=1.0A, di/dt=100A/s, Rec. to 1.0V tfr Note: (1) Pulse test: tp = 300s, duty cycle 2% Document Number 88816 18-Nov-02 www.vishay.com 1 MURS340 thru MURS360 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 - Forward Current Derating Curve 150 Average Forward Current (A) Average Forward Current (A) 5 4 3 2 1 125 100 75 50 25 0 0 25 75 50 100 150 125 175 1 10 TL -- Lead Temperature (C) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 4 - Typical Reverse Characteristics 1000 Instantaneous Reverse Current (A) Instantaneous Forward Current (A) 100 TJ = 125C 10 TJ = 150C 1 TJ = 100C TJ = 25C 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 100 TJ = 150C TJ = 125C 10 TJ = 100C 1 0.1 TJ = 25C 0.01 2.1 0 20 40 60 80 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance Fig. 6 - Typical Reverse Switching Characteristics Stored Charge / Reverse Recovery Time (nC/ns) 1000 Junction Capacitance (pF) 100 Number of Cycles at 60 HZ 100 10 1 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 100 100 120 Trr Qrr 100 1A, 50A/s, 30V 80 60 40 20 0 25 50 75 100 125 Junction Temperature (C) Document Number 88816 18-Nov-02