BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE MOSFET This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. SOT- 363 4 FEATURES 5 6 Low On-Resistance 3 2 Low Gate Threshold Voltage 1 Fast Switching In compliance with EU RoHS 2002/95/EC directives 6 5 4 1 2 3 APPLICATIONS Switching Power Supplies Hand-Held Computers, PDAs MARKING CODE: S84 MAXIMUM RATINGS TJ = 25C Unless otherwise noted Rating Symbol Value Units Drain-Source Voltage VDSS - 50 V Drain-Gate Voltage (Note 1) V DGR - 50 V Gate-Source Voltage VGSS 20 V Drain Current ID 130 mA Total Power Dissipation (Note 2) PD 200 mW Operating Junction Temperature Range TJ -55 to +150 C Storage Temperature Range Tstg -55 to +150 C Note 1. RGS < 20K ohms THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (Note 2) Symbol Value Units R thja 625 C/W Note 2. FR-4 board 70 x 60 x 1mm with minimum recommended pad layout 8/12/2005 Page 1 www.panjit.com BSS84DW Electrical Characteristics (Each Device) TJ = 25C Unless otherwise noted OFF CHARACTERISTICS (Note 3) Parameter Symbol Min Typ Max Units -50 - - V VDS= -50V, VGS= 0V, T J=25C - - -15 V DS= -50V, VGS= 0V, T J=125C - - -60 V DS= -25V, V GS= 0V, T J=25C - - -0.1 V GS= 20V, V DS= 0V - - 10 nA Conditions Min Typ Max Units V GS(th) VDS= V GS, I D= -1mA -0.8 -1.44 -2.0 V - 3.8 10 Ohms 0.05 - - S Min Typ Max Units - - 45 pF - - 25 pF - - 12 pF Conditions Drain-Source Breakdown Voltage BVDSS I D = -250A, VGS = 0V Zero Gate Voltage Drain Current Gate-Body Leakage I DSS I GSS A ON CHARACTERISTICS (Note 3) Parameter Gate Threshold Voltage Symbol Static Drain-Source On-ResistanceR DS(ON) VGS= -5V, I D= -0.1A g FS V DS= -25V, I D= -0.1A Forward Transconductance DYNAMIC CHARACTERISTICS Parameter Symbol Input Capacitance C iss Output Capacitance Coss Reverse Transfer Capacitance Crss Conditions VDS= -25V, VGS= 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min Typ Max Units Turn-On Delay Time t D(ON) - 7.5 - ns Turn-Off Delay Time t D(OFF) VDD= -30V, I D = -0.27A, RGEN= 50ohm, VGS= -10V - 25 - ns Note 3. Short duration test pulse used to minimize self-heating 8/12/2005 Page 2 www.panjit.com BSS84DW Electrical Characteristic Curves (Each Device) 1 1 V GS= 6V, 7V, 8V, 9V, 10V 0.9 -ID - Drain Source Current (A) -ID - Drain-to-Source Current (A) TJ = 25C Unless otherwise noted 0.8 0.7 5.0V 0.6 0.5 0.4 4.0V 0.3 0.2 3.0V 0.1 0 V DS =10V 0.8 0.6 0.4 25oC 0.2 0 0 1 2 3 4 5 0 1 Fig. 1. Output Characteristics 4 5 6 7 Fig. 2. Transfer Characteristics 10 RDS(ON) - On-Resistance (Ohms) 10 RDS(ON) - On-Resistance (Ohms) 3 -V GS - Gate-to-Source Voltage (V) -VDS - Drain-to-Source Voltage (V) 8 V GS = 4.5V 6 4 V GS =10.0V 2 8 6 Ids=-500mA 4 2 Ids=-50mA 0 0 0 0.2 0.4 0.6 0.8 2 1 4 6 8 10 -V GS - Gate-to-Source Voltage (V) -ID - Drain Curre nt (A) Fig. 3. On-Resistance vs. Drain Current Fig. 4. On-Resistance vs. G-S Voltage 1.2 10 ID =250A -IS - Source Current (A) V GS Threshold Voltage (NORMALIZED 2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100 125 150 o TJ - Junction Temperature ( C) 1 25oC 0.1 0.01 0.4 0.6 0.8 1 1.2 1.4 -VSD - Source-to-Drain Voltage (V) Fig. 5. Threshold Voltage vs. Temperature 8/12/2005 VGS = 0V Page 3 Fig. 6. Sourse-Drain Diode Forward Voltage www.panjit.com BSS84DW PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS ORDERING INFORMATION BSS84DW T/R7 - 7 inch reel, 3K units per reel BSS84DW T/R13 - 13 inch reel, 10K units per reel Copyright PanJit International, Inc 2009 The inform ation presented in this docum ent is believed to be accurate and reliable. The specifications and inform ation herein are subject to change without notice. Pan Jit m akes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or system s. Pan Jit does not convey any license under its patent rights or rights of others. 8/12/2005 Page 4 www.panjit.com