DS
V = -25V, I = -0.1A
DSGS
V = ±20V, V = 0V
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8/12/2005 Page 2
Electrical Characteristics (Each Device)
Parameter Symbol Min Units
Drain-Source Breakdown Voltage
T = 25°C Unless otherwise noted
Conditions Typ Max
BVDSS D
I = -250µA, V = 0V
Zero Gate Voltage Drain Curren
IDS
V = -50V, V = 0V, T =25°C
DS
Gate-Body Leakage
-50 - - V
- - -15
- - -60 µA
- ±10 nA
-
BSS84DW
-0.1--
OFF CHARACTERISTICS (Note 3)
IGSS
DS
DS
V = -50V, V = 0V, T =125°C
V = -25V, V = 0V, T =25°C
GS
GS
GS
J
J
J
J
D
Parameter Symbol Min Units
Gate Threshold Voltage
Conditions Typ Max
VGS(th) DS
V = V , I = -1mA
Forward Transconductance
-0.8 -1.44 -2.0 V
ON CHARACTERISTICS (Note 3)
gFS
GS D
0.05 - - S
Static Drain-Source On-Resistanc
RDS(ON) GS
V = -5V, I = -0.1A - 3.8 10 Ohms
D
Parameter Symbol Min Units
Input Capacitance
Conditions Typ Max
Ciss
Reverse Transfer Capacitance
- - 45 pF
DYNAMIC CHARACTERISTICS
Crss --12pF
Output Capacitance Coss
DS
V = -25V,
V = 0V,
f = 1.0MHz
- - 25 pF
GS
Parameter Symbol Min Units
Turn-On Delay Time
Conditions Typ Max
tD(ON) - 7.5 - ns
SWITCHING CHARACTERISTICS
Turn-Off Delay Time - 25 - ns
tD(OFF)
V = -30V, I = -0.27A,
R = 50ohm, V = -10V
DD D
GEN GS
Note 3. Short duration test pulse used to minimize self-heating
GS