BC847BMB,315"" - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

NPN general-purpose transistors in a leadless ultra small SOT883B

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

1.3 Applications

General-purpose switching and amplification

Mobile applications

1.4 Quick reference data

BC847xMB series

45 V, 100 mA NPN general-purpose transistors

Rev. 1 — 5 March 2012 Product data sheet

SOT883B

Table 1. Product overview

Type number Package PNP complement

NXP JEITA JEDEC

BC847AMB SOT883B - - BC857AMB

BC847BMB SOT883B - - BC857BMB

BC847CMB SOT883B - - BC857CMB

Leadless ultra small SMD plastic

package

Power dissipation comparable to SOT23

Low package height of 0.37 mm AEC-Q101 qualified

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 45 V

ICcollector current - - 100 mA

hFE DC current gain VCE =5V; I

C=2mA

BC847AMB 110 - 220

BC847BMB 200 - 450

BC847CMB 420 - 800

Product data sheet Rev. 1 — 5 March 2012 2 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

2. Pinning information

3. Ordering information

4. Marking

[1] For SOT883B binary marking code description, see Figure 1.

4.1 Binary marking code description

Table 3. Pinning

Pin Description Simplified outline Graphic symbol

1base

2emitter

3 collector

Transparent

top view

sym021

Tabl e 4. Ordering information

Type number Package

Name Description Version

BC847xMB series - leadless ultra small plastic package; 3 solder lands;

body 1.0 0.6 0.37 mm SOT883B

Table 5. Marking codes

Type number Marking code[1]

BC847AMB 0100 0001

BC847BMB 0100 0010

BC847CMB 0100 0011

Fig 1. SOT883B binary marking code descri ption

MARKING CODE

(EXAMPLE)

PIN 1 INDICATION READING DIRECTION

READING DIRECTION

READING EXAMPLE:

0111

1011

006aac673

Product data sheet Rev. 1 — 5 March 2012 3 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 50 V

VCEO collector-emitter voltage open base - 45 V

VEBO emitter-base voltage open collector - 6 V

ICcollector current - 100 mA

ICM peak collector current single pulse;

tp1ms -200mA

IBM peak base current single pulse;

tp1ms -100mA

Ptot total power dissipation Tamb 25 C[1][2] -250mW

Tjjunction temperature - 150 C

Tamb ambient temperature 55 +150 C

Tstg storage temperature 65 +150 C

Product data sheet Rev. 1 — 5 March 2012 4 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Reflow soldering is the only recommended soldering method.

Table 7. Thermal characteris tics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1][2] - - 500 K/W

FR4 PCB, standard footprint

Fig 2. Transient thermal impedance from junc tio n to ambient as a function of pulse dura tion; typical values

006aab603

−5

1010

−2

−4

−1

(s)

−3

th(j-a)

(K/W)

duty cycle =

10.75

0.5 0.33

0.2

0.1

0.05 0.02

0.01

Product data sheet Rev. 1 — 5 March 2012 5 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

7. Characteristics

[1] Pulse test: tp300 s; 0.02.

Table 8. Characteristics

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base

cut-off current VCB =30V; I

E=0A - - 15 nA

VCB =30V; I

E=0A;

Tj= 150 C--5A

IEBO emitter-base

cut-off current VEB =5V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =5V; I

C=2mA

BC847AMB 110 - 220

BC847BMB 200 - 450

BC847CMB 420 - 800

VCEsat collector-emitter

saturation voltage IC=10mA; I

B= 0.5 mA - 90 200 mV

IC= 100 mA; IB=5mA [1] - 200 400 mV

VBEsat base-emitter

saturation voltage IC=10mA; I

B=0.5mA - 700 - mV

IC= 100 mA; IB=5mA [1] -900- mV

VBE base-emitter voltage IC=2mA; V

CE = 5 V 580 660 700 mV

IC=10mA; V

CE = 5 V - - 770 mV

fTtransition frequency VCE =5V; I

C=10mA;

f = 100 MHz 100 - - MHz

Cccollector capacit ance VCB =10V; I

E=i

e=0A;

f=1MHz --1.5pF

Ceemitter capacitance VEB =0.5V; I

C=i

c=0A;

f=1MHz -11- pF

NF noise figure IC= 200 A; VCE =5V;

RS=2k; f = 1 kHz;

B=200Hz

- 2 10 dB

Product data sheet Rev. 1 — 5 March 2012 6 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

VCE =5V

(1) Tamb = 150 C

(2) Tamb =25C

(3) Tamb =55 C

VCE =5V

(1) Tamb =55 C

(2) Tamb =25C

(3) Tamb = 150 C

Fig 3. BC847AMB: DC current gain as a function of

collector current; typical valu es Fig 4. BC847AMB: Base-emitter voltage as a function

of collector current; typica l values

IC/IB=20

(1) Tamb = 150 C

(2) Tamb =25C

(3) Tamb =55 C

IC/IB=10

(1) Tamb =55 C

(2) Tamb =25C

(3) Tamb = 150 C

Fig 5. BC847 A MB: Collector-emitter saturation

voltage as a function of collector current;

typical valu e s

Fig 6. BC847AMB: Base-emitter saturation voltage

as a function of collector current; typical

values

mgt723

10−111010

2103

IC (mA)

400

300

200

100

hFE

(1)

(2)

(3)

mgt724

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBE

(mV)

(1)

(2)

(3)

103

102

mgt725

10−111010

2103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

mgt726

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 1 — 5 March 2012 7 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

VCE =5V

(1) Tamb = 150 C

(2) Tamb =25C

(3) Tamb =55 C

VCE =5V

(1) Tamb =55 C

(2) Tamb =25C

(3) Tamb = 150 C

Fig 7. BC847BMB: DC current gain as a function of

collector current; typical valu es Fig 8. BC847BMB: Base-emitter voltage as a function

of collector current; typica l values

IC/IB=20

(1) Tamb = 150 C

(2) Tamb =25C

(3) Tamb =55 C

IC/IB=10

(1) Tamb =55 C

(2) Tamb =25C

(3) Tamb = 150 C

Fig 9. BC847 B MB: Collector-emitter saturation

voltage as a function of collector current;

typical valu e s

Fig 10. BC847BMB: Base-emitter saturatio n vo ltage

as a function of collector current; typical

values

mgt727

10−111010

2103

IC (mA)

600

500

400

300

200

100

hFE

(1)

(2)

(3)

1200

1000

800

600

400

200

mgt728

10−210−111010

2103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

104

103

102

mgt729

10−111010

2103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

mgt730

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

VBEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 1 — 5 March 2012 8 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

VCE =5V

(1) Tamb = 150 C

(2) Tamb =25C

(3) Tamb =55 C

VCE =5V

(1) Tamb =55 C

(2) Tamb =25C

(3) Tamb = 150 C

Fig 11. BC847CMB: DC current gain as a function of

collector current; typical valu es Fig 12. BC847CMB: Base-emitter voltage as a function

of collector current; typica l values

IC/IB=20

(1) Tamb = 150 C

(2) Tamb =25C

(3) Tamb =55 C

IC/IB=10

(1) Tamb =55 C

(2) Tamb =25C

(3) Tamb = 150 C

Fig 13. BC847 C MB: Collect or-emitter saturation

voltage as a function of collector current;

typical valu e s

Fig 14. BC847CMB: Base-emitter saturatio n vo ltage

as a function of collector current; typical

values

mgt731

10−111010

2103

IC (mA)

1200

1000

800

600

400

200

hFE

(1)

(2)

(3)

1200

1000

800

600

400

200

mgt732

10−210−111010

2103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

104

103

102

mgt733

10−111010

2103

IC (mA)

VCEsat

(mV)

(1)

(2)(3)

mgt734

−1

11010

(mA)

1200

1000

800

600

400

200

BEsat

(mV)

(1)

(2)

(3)

Product data sheet Rev. 1 — 5 March 2012 9 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

Fig 15. Package outline SOT883B

11-11-02Dimensions in mm

0.55

0.47

0.30

0.22

0.40

0.34

0.30

0.22

0.20

0.12

0.65

0.04 max

0.35

0.65

0.55

1.05

0.95

Table 9. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

10000

BC847xMB series SOT883B 2 mm pitch, 8 mm tape and reel -315

Product data sheet Rev. 1 — 5 March 2012 10 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

11. Soldering

Reflow soldering is the only recommended soldering method.

Fig 16. Reflow soldering footprint SOT883B

1.3

0.3

0.6 0.7

0.4

0.9

0.3

(2x)

0.4

(2x)

0.25

(2x)

R0.05 (8x)

0.7

Footprint information for reflow soldering SOT883B

sot883b_fr

occupied area

solder land

solder resist

solder land plus solder paste

solder paste deposit

Dimensions in mm

Product data sheet Rev. 1 — 5 March 2012 11 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

12. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BC847XMB_SER v.1 20120305 Product data sheet - -

Product data sheet Rev. 1 — 5 March 2012 12 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsisten cy or conf lict with the short data sheet, the

full data sheet shall pre vail.

Product specificatio n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

13.3 Disclaimers

Limited warr a nty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Se miconductors takes no

responsibility for the content in this document if provided by an inf ormation

source outside of NXP Semiconductors.

In no event shall NXP Semiconductors be liable for any indirect , incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ ag gregate and cumulati ve liability toward s

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors product s are not designed,

authorized or warranted to be suitable for use in life support, lif e-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe propert y or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconducto rs products in such equipment or

applications and ther efore such inclu sion and/or use is at the cu stomer’s own

risk.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applicati ons or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing i n this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or t he grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product develop ment.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 5 March 2012 13 of 14

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BC847xMB series

45 V, 100 mA NPN general-purpose transist ors

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of rele ase: 5 March 2012

Document identifier: BC847XMB_SER

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

4.1 Binary marking code description. . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 9

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Packing information . . . . . . . . . . . . . . . . . . . . . 9

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information. . . . . . . . . . . . . . . . . . . . . 13

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14