IRF460
Prelim. 11/98
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Characteristic Test Conditions Min. Typ. Max. Unit
BVDSS
IDSS
IGSS
VGS(TH)
ID(ON)
RDS(ON)
VDSS
ID
IDM
VGS
PD
TJ, TSTG
TL
12
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
TO–3 (TO–204AA) Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current 1
Gate – Source Voltage
Total Power Dissipation @ Tcase = 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063 ” from Case for 10 Sec.
VGS = 0V , ID= 1mA
VDS = VDSS
VDS = 0.8VDSS , TC= 125°C
VGS = ±20V , VDS = 0V
VDS = VGS , ID= 250µA
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
VGS = 10V , ID= 13A
VGS = 10V , ID= 21A
N–CHANNEL
ENHANCEMENT MODE
HIGH V OLTA GE
POWER MOSFETS
500
21
84
±20
300
2.4
–55 to 150
300
V
A
A
V
W
W/°C
°C
Drain – Source Breakdown Voltage
Zero Gate Voltage Drain Current
(VGS = 0V)
Gate – Source Leakage Current
Gate Threshold Voltage
On State Drain Current 2
Drain – Source On State Resistance 2
500
25
250
±100
24
21
0.27
0.31
V
µA
nA
V
A
Ω
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
VDSS 500V
ID(cont) 21A
RDS(on) 0.27ΩΩ
Pin 1 – Gate Pin 2 – Source Case – Drain
IRF460
Prelim. 11/98
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Website http://www.semelab.co.uk
Characteristic Test Conditions Min. Typ. Max. Unit
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Characteristic Test Conditions Min. Typ. Max. Unit
21
84
1.8
580
8.1
IS
ISM
VSD
trr
Qrr
(Body Diode)
(Body Diode)
VGS = 0V , IS= – ID[Cont.]
IS= – ID[Cont.] , dls / dt = 100A/µs
IS= – ID[Cont.] , dls / dt = 100A/µs
Continuous Source Current
Pulsed Source Current1
Diode Forward Voltage2
Reverse Recover y Time
Reverse Recover y Charge
A
V
ns
µC
Characteristic Min. Typ. Max. Unit
0.42
30
RθJC
RθJA
Junction to Case
Junction to Ambient °C/W
DYNAMIC CHARACTERISTICS
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
Input Capacitance
Output Capacitance
Re v erse Tr ansf er Capacitance
Total Gate Charge3
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VDD = 0.5 VDSS
ID= ID[Cont.] @ 25°C
VGS = 15V
VDD = 0.5 VDSS
ID= ID[Cont.] @ 25°C
RG= 1.8Ω
pF
nC
ns
2890
590
230
140 190
18 27
75 135
19 35
43 120
85 130
56 98
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.