VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com Vishay Semiconductors High Voltage Surface Mountable Input Rectifier Diode, 8 A FEATURES Base cathode + 2 * Glass passivated pellet chip junction * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 3 1 1 Anode - TO-252AA (D-PAK) 3 - Anode APPLICATIONS * Input rectification * Vishay Semiconductors switches and output rectifiers which are available in identical package outlines PRODUCT SUMMARY Package TO-252AA (D-PAK) IF(AV) 8A VR 800 V, 1200 V VF at IF 1.1 V IFSM 150 A TJ max. 150 C Diode variation Single die DESCRIPTION The VS-8EWS..S-M3 rectifier high voltage series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 C junction temperature. The high reverse voltage range available allows design of input stage primary rectification with outstanding voltage surge capability. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE NEMA FR-4 or G10 glass fabric-based epoxy with 4 oz. (140 m) copper 1.2 1.6 Aluminum IMS, RthCA = 15 C/W 2.5 2.8 Aluminum IMS with heatsink, RthCA = 5 C/W 5.5 6.5 UNITS A Note * TA = 55 C, TJ = 125 C, footprint 300 mm2 MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 8 A VRRM 800/1200 V IFSM 150 A VF 8 A, TJ = 25 C TJ 1.10 V -55 to +150 C IRRM AT 150 C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-8EWS08S-M3 800 900 VS-8EWS12S-M3 1200 1300 0.5 Revision: 19-Jan-17 Document Number: 93383 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current SYMBOL IF(AV) IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS TC = 105 C, 180 conduction half sine wave VALUES UNITS 8 A 10 ms sine pulse, rated VRRM applied 125 10 ms sine pulse, no voltage reapplied 150 10 ms sine pulse, rated VRRM applied 78 10 ms sine pulse, no voltage reapplied 110 t = 0.1 ms to 10 ms, no voltage reapplied 1100 A2s VALUES UNITS 1.1 V 20 m 0.82 V A2s ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 8 A, TJ = 25 C TJ = 150 C TJ = 25 C TJ = 150 C VR = Rated VRRM 0.05 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) SYMBOL TEST CONDITIONS TJ, TStg RthJC DC operation UNITS -55 to +150 C 2.5 C/W RthJA (1) 62 Approximate weight Marking device VALUES Case style TO-252AA (D-PAK) 1 g 0.03 oz. 8EWS08S 8EWS12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 m) copper 40 C/W For recommended footprint and soldering techniques refer to application note #AN-994 Revision: 19-Jan-17 Document Number: 93383 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com 8EWS. Series RthJC (DC) = 2.5 C/W 140 130 O Conduction angle 120 110 100 30 60 90 90 120 Maximum Average Forward Power Loss (W) 20 150 Maximum Allowable Case Temperature (C) Vishay Semiconductors 180 0 2 4 12 RMS limit 10 8 O 6 Conduction period 4 8EWS. Series TJ = 150 C 2 6 10 8 12 0 4 6 8 10 12 14 16 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics 140 8EWS. Series RthJC (DC) = 2.5 C/W 140 At any rated load condition and with rated Vrrm applied following surge. Initial TJ = 150 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 130 130 Peak Half Sine Wave Forward Current (A) 120 O Conduction period 120 110 2 Average Forward Current (A) 150 Maximum Allowable Case Temperature (C) 16 14 0 80 30 60 100 90 120 180 110 100 90 80 70 60 50 VS-8EWS08S .. Series 40 DC 90 30 0 2 4 6 8 10 12 14 16 1 18 Average Forward Current (A) 14 12 140 10 RMS limit 8 6 O Conduction angle 4 8EWS. Series TJ = 150 C 2 2 4 6 8 120 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = TJ max. No voltage reapplied Rated Vrrm reapplied 100 80 60 40 VS-8EWS08S .. Series 0 0 100 160 180 120 90 60 30 Peak Half Sine Wave Forward Current (A) 16 10 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 2 - Current Rating Characteristics Maximum Average Forward Power Loss (W) DC 180 120 90 60 30 18 10 20 0.01 0.1 1 10 Average Forward Current (A) Pulse Train Duration (s) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 19-Jan-17 Document Number: 93383 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS08S-M3, VS-8EWS12S-M3 Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 100 TJ = 25 C TJ = 150 C 10 8EWS. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics ZthJC - Transient Thermal Impedance (C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 19-Jan-17 Document Number: 93383 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8EWS08S-M3, VS-8EWS12S-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 8 E W S 12 S TR -M3 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Current rating (8 = 8 A) 3 - Circuit configuration: E = single diode 4 - Package: W = D-PAK 5 - Type of silicon: 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - TR = tape and reel S = standard recovery rectifier 08 = 800 V 12 = 1200 V TRR = tape and reel (right oriented) TRL = tape and reel (left oriented) 9 - Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-8EWS08S-M3 75 3000 Antistatic plastic tubes VS-8EWS08STR-M3 2000 2000 13" diameter reel VS-8EWS08STRL-M3 3000 3000 13" diameter reel VS-8EWS08STRR-M3 3000 3000 13" diameter reel 75 3000 Antistatic plastic tubes VS-8EWS12S-M3 VS-8EWS12STR-M3 2000 2000 13" diameter reel VS-8EWS12STRL-M3 3000 3000 13" diameter reel VS-8EWS12STRR-M3 3000 3000 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95627 Part marking information www.vishay.com/doc?95176 Packaging information www.vishay.com/doc?95033 Revision: 19-Jan-17 Document Number: 93383 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D-PAK (TO-252AA) "M" DIMENSIONS in millimeters and inches (5) A E b3 (3) Pad layout C A 0.010 M C A B c2 A L3 (3) O1 4 O2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 0.265 MIN. (6.74) E1 3 2 0.488 (12.40) 0.409 (10.40) 1 0.089 MIN. (2.28) Detail "C" (2) L5 b 2x e A c b2 0.06 MIN. (1.524) 0.010 M C A B 0.093 (2.38) 0.085 (2.18) (L1) Detail "C" Rotated 90 CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 SYMBOL MILLIMETERS INCHES MIN. MAX. MIN. MAX. C Seating plane C O L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 O 0 10 0 10 E 6.35 6.73 0.250 0.265 5 O1 0 15 0 15 E1 4.32 - 0.170 - 3 O2 25 35 25 35 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. 0.020 BSC 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC(R) outline TO-252AA Revision: 24-Jun-16 Document Number: 95627 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. (c) 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000